Abstract:The development of high-performance integrated circuit chips and the shrinkage of feature sizes according to Moore’s law bring forward continuously the requirements for low dielectric constant (low-k) materials with various excellent properties in the back-end-of-the-line (BEOL) interconnect. Porous SiCOH films prepared by plasma enhanced chemical vapor deposition (PECVD) through a porogen approach are widely applied to industry and extensively studied. Thermal annealing is an important process for fabricating the porous low-k films, which has a great influence on film structure as well as properties. SiCOH films are deposited by PECVD using tetraethoxysilane and limonene as precursors, and annealed at 450 ℃ for 1.5 h under nitrogen atmosphere. The evolutions of film structure and properties during thermal annealing are revealed, and the reaction mechanism for structure change is also proposed. Fourier transform inferred spectroscopy and solid state nuclear magnetic resonance results show that the as-deposited film is an organic-inorganic hybrid film composed of various kinds of Si-O-Si, -CHx, Si-O-CH2CH3, etc. The organic component is removed almost completely during thermal annealing, making a porous film with a Si-O-Si inorganic skeleton. The skeleton is also rearranged at the same time. Deconvolution of the Si-O-Si absorption band of the FTIR spectrum reveals that the cage-like Si-O-Si occupies the major part for both as-deposited and annealed films, while the amount of silicon suboxide Si-O-Si decreases and that of network Si-O-Si increases during thermal annealing, making the film more robust. More C=C and Si-C are formed through chemical reactions between Si-H, -CHx and Si-O-CH2-CH3, and crosslinking is further enhanced. Nitrogen adsorption/desorption isothermal measurement reveals that a large number of micropores with diameter less than 2-3 nm are created during thermal annealing, which is consistent with the removal of organic groups and the existence of cage-like Si-O-Si. As a result, both the refractive index and dielectric constant decrease significantly from 1.476 (λ =630 nm) and 3.45 to 1.365 and 2.60, respectively. Because of the increase of C=C after annealing, extinction coefficient and leakage current density increase. Although there is a shrinkage of 14.7% in film thickness and a reduction of mechanical properties after annealing, the Young’s modulus is still larger than 4 GPa. Considering all kinds of properties, the obtained film appears to be a competitive candidate as inter layer dielectrics in the BEOL interconnect of integrated circuits.

Study on the Dramatic Decrease in Surface Resistance of Insulation Films on Non-Oriented Silicon Steel after Stress Relief Annealing

Effect of Prior Stress-Relief on the Gliding of Indentation Dislocations on Silicon Wafers

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Component Design of Environmentally Friendly High-Temperature Resistance Coating for Oriented Silicon Steel and Effects on Anti-Corrosion Property

Preparation and Properties of Oriented Silicon Steel Insulation Coating with Repair Function

Progress in the Study of Insulating Coating for Non-Oriented Silicon Steel

Effects of Composition and Thermal Annealing on the Mechanical Properties of Silicon Oxycarbide Films

Micro characterization and degradation mechanism of liquid silicone rubber used for external insulation

Preparation and Properties of Chromium-Free Corrosion-Resistant Coatings for Oriented Silicon Steel

Studying the Effects of Annealing and Surface Roughness on Both the Magnetic Property and Surface Energy of Co60Fe20Sm20 Thin Films on Si(100) Substrate

Roles of Silicon Content and Normalization Temperature on Cold Workability and Recrystallization of High-Grade Non-Oriented Silicon Steel

The analysis of aging characteristics of RTV insulating coatings with varying silicone rubber contents

Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC

Exploring the Relationship Between Electrical Characteristics and Changes in Chemical Composition and Structure of OSG Low-K Films Under Thermal Annealing

Surface Roughness-Induced Changes in Important Physical Features of CoFeSm Thin Films on Glass Substrates during Annealing

Study on formation mechanism and corrosion resistance of an environmentally protective insulating coating on non-oriented electrical steel

Effect of Thermal Annealing on the Structure and Properties of Plasma Enhanced Chemical Vapor Deposited Sicoh Film

Residual Stress Relief of Hard A-C Films Though Buckling

The Research of Non-Oriented Electrical Steel Processed by Stress Relief Annealing Experiments

In-situ observation of transition between surface relief and wrinkling in thin film shape memory alloys.

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.