Abstract:Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D films lack sufficient gate tunability, and the tuning of NDR behavior from appearing to vanishing remains elusive. Here, a gate-tunable NDR device is reported based on a vertically stacked black phosphorus (BP) and molybdenum disulfide (MoS2) thin 2D heterojunction. At room temperature, a rectifying ratio of ∼6 orders of magnitude from a reverse rectifying diode to a forward rectifying diode by gate modulation is obtained. Through analyzing the temperature-dependent electrical properties, the tunneling mechanism at a certain gate voltage range is revealed. Moreover, the switchable and continuously gate-tunable NDR behavior is realized with a maximum peak-to-valley ratio of 1.23 at 77 K, as shown in the IDS mappings by sweeping VDS under different VGS. In addition, a compact model for gate-tunable NDR behavior in 2D heterostructures is proposed. To our best knowledge, this is the first demonstration of NDR behavior in BP-MoS2 heterostructures. Consequently, this work sheds light on the gate-tunable NDR devices and reconfigurable logic devices for realizing ternary and reconfigurable logic systems.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c03959?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c03959</a>.Discussions of the thin high-k dielectric layer's quality, Raman spectrum of BP and MoS2, hysteresis of the BP FET at room temperature, Schottky barrier of the MoS2/Pd interface, comparison between band-to-band-tunneling simulation results and experimental curves, approximate band offset of this BP-MoS2 heterojunction device, the EF extractions of BP and MoS2 at room temperature, EF extractions of MoS2 in 5 temperature points, detailed temperature-dependent MoS2 FET behaviors, another temperature-dependent behavior of the MoS2 FET device with Pd contact, temperature-dependent BP-MoS2 heterojunction FET behaviors, reproducible NDR behaviors in three BP-MoS2 devices, detailed hysteresis of NDR behavior, EF extractions of BP and MoS2 at 77 K, and detailed NDR simulation section (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c03959/suppl_file/am1c03959_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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