Reductive Thermal ALD of Pd and Pd2Ge From a Novel Recyclable Palladium Chloride Adduct

Anton Vihervaara,Timo Hatanpää,Mikko‐Ilmari Selänne,Kenichiro Mizohata,Mikko Ritala
DOI: https://doi.org/10.1002/admi.202400579
IF: 5.4
2024-10-10
Advanced Materials Interfaces
Abstract:Thermal reductive atomic layer deposition of Pd and Pd2Ge is realized from dichlorobis(triethylphosphine)palladium(II), a novel fully recyclable precursor. The metal precursor is synthesized and metallic and intermetallic thin films are deposited at 150–180 °C and analyzed with a variety of methods. ALD‐type growth is shown and Pd films can be deposited with a growth rate of 0.3–0.4 Å cycle−1. In this work, a new ALD process for palladium metal thin films using dichlorobis(triethylphosphine)palladium(II) (PdCl2(PEt3)2) and 1,4‐bis(trimethylsilyl)‐1,4‐dihydropyrazine ((Me3Si)2DHP) as reactants, is developed. The metal precursor is chosen based on the known reactivity of metal halides with the DHP‐type reducing agents. Metallic Pd films are deposited at temperatures of 140–180 °C with a growth rate of 0.3–0.4 Å cycle−1. Furthermore using 1,4‐bis(trimethylgermyl)‐1,4‐dihydropyrazine ((Me3Ge)2DHP) as the co‐reactant yielded Pd2Ge thin films. Finally, full recyclability of the PdCl2(PEt3)2 is observed: unused molecules condensed in the exhaust tube can be collected by dissolving them into acetone, purified by recrystallization, and reused.
materials science, multidisciplinary,chemistry
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