A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet
Asadollah Bafekry,Catherine Stampfl,Mitra Ghergherehchi,Saber Farjami Shayesteh
DOI: https://doi.org/10.1016/j.carbon.2019.10.038
IF: 10.9
2020-02-01
Carbon
Abstract:<p>Using the first-principles calculations, we explore the structural and novel electronic/optical properties of the <span class="math"><math>C2N</math></span> nanosheet. To this goal, we systematically investigate the affect of layer thickness, electrical field and strain on the electronic properties of the <span class="math"><math>C2N</math></span> nanosheet. By increasing the thickness of <span class="math"><math>C2N</math></span>, we observed that the band gap decreases. Moreover, by applying an electrical field to bilayer <span class="math"><math>C2N</math></span>, the band gap decreases and a semiconductor-to-metal transition can occur. Our results also confirm that uniaxial and biaxial strain can effectively alter the band gap of <span class="math"><math>C2N</math></span> monolayer. Furthermore, we show that the electronic and magnetic properties of <span class="math"><math>C2N</math></span> can be modified by the adsorption and substitution of various atoms. Depending on the species of embedded atoms, they may induce semiconductor (O, C, Si and Be), metal (S, N, P, Na, K, Mg and Ca), dilute-magnetic semiconductor (H, F, B), or ferro-magnetic-metal (Cl, Li) character in <span class="math"><math>C2N</math></span> monolayer. It was also found that the inclusion of hydrogen or oxygen impurities and nitrogen vacancies, can induce magnetism in the <span class="math"><math>C2N</math></span> monolayer. These extensive calculations can be useful to guide future studies to modify the electronic/optical properties of two-dimensional materials.</p>
materials science, multidisciplinary,chemistry, physical