Abstract:To solve the energy crisis, humans are actively searching for renewable energy to replace fossil fuels. Solar energy has attracted much attention due to its clean and inexhaustible characteristics. The photovoltaic effect can be used to convert solar energy into electrical energy for human use; thus, it is important to develop high-performance, stable solar cells. Perovskite solar cells have been the subject of attention since the first perovskite solar cell was reported in 2009. The power conversion efficiency of perovskite solar cells has increased from 3.8％ to 22.1％ at present. Perovskite is considered a candidate material for a new generation of solar cells because of its high-power conversion efficiency, its simple fabrication process, its flexible characteristics and its controllable band gap. Several methods exist for the fabrication of perovskite solar cells, such as the one-step method and the two-step method as well as vapor deposition. Herein, we used a novel method, the flash method, to deposit perovskite film. After the perovskite precursor was deposited onto an electron transport layer by spin coating, the substrate was transferred into a vacuum chamber. The solvent was removed, and an interphase was formed after pumping. In this work, we fabricated perovskite devices by the flash method through a homemade vacuum flash system. The structure of the devices was ITO/SnO 2/perovskite/spiro-OMeT AD/Ag, where spiro-OMeT AD is 2, 2′, 7, 7′-tetrakis (N, N-di-p-methoxyphenylamine) -9, 9′-spirobifluorene. The fabrication parameters for depositing a perovskite active layer were studied. Through the analysis of the results, we show that the pumping pressure should be controlled under 20 Pa and that the time for laying up precursor solution needs to be less than 1 h. The open-circuit voltage decreased, and the short-circuit current density increased, with pumping. The filling factor reached a maximum at approximately 20 Pa. The films were observed by a scanning electron microscope to recognize the growth process. It was found that the perovskite begins to crystallize following pumping and that the surface of the perovskite film is relatively rough at this time, and defect pinholes can be observed. The film became uniform and showed no defect pinholes when decreasing pressure in the vacuum chamber. The interphase was formed when the pressure reached 20 Pa. After optimization, the highest power conversion efficiency reached was 18.09％. In addition, it was possible to control the perovskite bandgap width, to reduce the leakage current and to increase the carrier diffusion length by doping other halogen ions. Therefore, this work demonstrates improved performance of perovskite solar cells by doping of CH3NH3Cl into a perovskite precursor. A series of perovskite devices was fabricated by adjusting the doping ratio of CH3NH3Cl. The doping of the Cl element significantly improved the short circuit current density and fill factor of the devices. To further explore the influence of Cl doping, we observed the morphology of perovskite films with varying doping ratios with a scanning electron microscope. It was found that perovskite grains were enlarged after Cl doping, which increased the length of carrier diffusion. The highest power conversion efficiency of 18.69％ was reached when the Cl doping ratio was 10％. For flexible devices, the highest power conversion efficiency obtained was 15.10％. This work has value for researchers in terms of the use of the vacuum flash method to fabricate perovskite devices.

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