Effects of Pr3+ -activated BaZrGe3O9@TiO2 phosphor compound on light emitting diodes validated by computer simulation

Le Thi Trang,Le Xuan Thuy,Nguyen Le Thai,Thuc Minh Bui
DOI: https://doi.org/10.11591/ijeecs.v34.i3.pp1482-1488
2024-06-01
Indonesian Journal of Electrical Engineering and Computer Science
Abstract:The Pr 3+ -doped BaZrGe 39 gallogermanate phosphors are reported to have a well-defined successive deep defect structure that effectively mitigates thermal carrier fading. This phosphor also presents a red emission with a peak at 615 nm, originating from the Pr 3+ transtition from 1 D 2 to 3 H 4 . We investigated the impact of Pr 3+ -activated BaZrGe3O9 (referred to as BZG:Pr) on the lighting characteristics of light emitting diodes (LED) packages in this paper. By combining BZG:Pr with TiO 2 particles and silicone, we produced a phosphor layer (designated as BZG:Pr@TiO 2 ). The optical performance of the resulting LED was systematically examined by varying the TiO 2 doping percentage. Our findings reveal that the incorporation of the BZG:Pr phosphor enhances the red spectral component, thereby contributing to improved homogeneity in color distribution. However, a progressive increase in TiO 2 content within the phosphor layer corresponds to diminishing luminous output and decreased chromatic rendering efficiency of the LED. Employing a lower concentration of TiO 2 proves advantageous, as it capitalizes on the scattering-enhancing attributes while leveraging the red emission of the BZG:Pr phosphor. This synergistic approach yields a favorable balance between luminosity and color quality, enhancing the LED’s overall performance.
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