Decay of mean-values of multiplicative functions

Andrew Granville,K. Soundararajan

DOI: https://doi.org/10.48550/arXiv.math/9911246

1999-11-12

Abstract:Given a multiplicative function f satisfying |f(n)| <= 1 for all n, the authors study the problem of obtaining explicit upper bounds on the mean-value 1/x |sum_{n <= x} f(n)|.

Number Theory

What problem does this paper attempt to address?

Anomalous tension–compression asymmetry in amorphous silicon: insights from atomistic simulations and elastoplastic constitutive modeling

Bin Ding,Liang Hu,Yuan Gao,Yuli Chen,Xiaoyan Li

DOI: https://doi.org/10.1016/j.jmps.2024.105575

IF: 5.582

2024-05-01

Journal of the Mechanics and Physics of Solids

Abstract:Recent experiments observed an inherent, anomalous tension-compression (T-C) asymmetry with T>C in microscale amorphous silicon (a-Si), which is free of dominant microcracks or dislocations. However, quantifying the disordered structure of a-Si and correlating it with T-C asymmetry remains mysterious. Here, we first conduct a series of atomistic simulations to explore this anomaly in a-Si. Results reveal a positive correlation between cooling rate q and fraction of liquid-like phase ϕ ll, suggesting that higher cooling rates trap more atoms in liquid-like phase. Uniaxial tension and compression tests reveal that T-C asymmetry with T>C persists across all cooling rates, where the physical origin is attributed to variations in initial ϕ ll and its subsequent spatial and temporal evolutions during loading. A physics based, Mohr-Coloumb type elastoplastic constitutive model, determining cohesion c by the content of liquid-like component ϕ ll , successfully reproduces the observed anomalous T-C asymmetry and its dependence on the initial structure in a-Si. Furthermore, the degree of asymmetry tends to diminish with an increase in initial ϕ ll , a trend general to both amorphous Si and CuZr metallic glass (MG). While the contrasting atomic volumes of the liquid-like phase in a-Si and MG explain their differing T-C asymmetries, with a-Si exhibiting T>C and CuZr exhibiting T<C. These insights enhance the fundamental understanding of processing-structure-property relationship in amorphous materials, which benefits for designing amorphous with desired asymmetry in practical applications.

mechanics,materials science, multidisciplinary,physics, condensed matter
Ab initio studies of the impact of the Debye-Waller factor on the structural and dynamical properties of amorphous semiconductors: The case of $a$-Si

Devilal Dahal,Raymond Atta-Fynn,Stephen R. Elliott,Parthapratim Biswas

2023-07-16

Abstract:This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon ($a$-Si) from lattice-dynamical calculations and direct molecular-dynamics simulations using density-functional theory (DFT). The effects of temperature and structural disorder on the intensity of the diffraction maxima and the vibrational mean-square displacement (MSD) of Si atoms are studied in the harmonic approximation, with particular emphasis on the bond-length disorder, the presence of coordination defects, and microvoids in $a$-Si networks. It has been observed that the MSDs associated with tetrahedrally-bonded Si atoms are considerably lower than their dangling-bond counterparts -- originating from isolated and vacancy-induced clustered defects -- and those on the surface of microvoids, leading to an asymmetric non-gaussian tail in the distribution of atomic displacements. An examination of the effect of anharmonicity on the MSD at high temperatures using direct $ab$ $initio$ molecular-dynamics simulations (without the harmonic approximation) suggests that the vibrational motion in $a$-Si is practically unaffected by anharmonic effects at temperatures below 400 K, as far as the present DFT calculations are concerned. The Debye temperature of $a$-Si is found to be in the range of 488--541 K from specific-heat and MSD calculations using first-principles lattice-dynamical calculations in the harmonic approximation, which matches closely with the experimental value of 487--528 K obtained from specific-heat measurements of $a$-Si at low temperatures.

Materials Science,Disordered Systems and Neural Networks,Statistical Mechanics
Non-equilbrium Dynamics in Amorphous Si_3B_3N_7

A. Hannemann,J.C. Schön,M.Jansen,P. Sibani

DOI: https://doi.org/10.48550/arXiv.cond-mat/0504384

2005-04-15

Abstract:We present extensive numerical investigations of the structural relaxation dynamics of a realistic model of the amorphous high-temperature ceramic a-Si$_3$B$_3$N$_7$, probing the mean square displacement (MSD) of the atoms, the bond survival probability (BSP), the average energy, the specific heat, and the two-point energy average. Combining the information from these different sources, we identify a transition temperature $T_c \approx 2000$ K below which the system is no longer ergodic and physical quantities observed over a time $t_{obs}$ show a systematic parametric dependence on the waiting time $t_w$, or age, elapsed after the quench. The aging dynamics 'stiffens' as the system becomes older, which is similar to the behavior of highly idealized models such as Ising spin-glasses and Lennard-Jones glasses.

Statistical Mechanics,Disordered Systems and Neural Networks
Specific Heat of Thin Phonon Cavities at Low Temperature: Very High Values Revealed by ZeptoJoule Calorimetry

Adib Tavakoli,Kunal J. Lulla,Tuomas Puurtinen,Ilari Maasilta,Eddy Collin,Laurent Saminadayar,Olivier Bourgeois

DOI: https://doi.org/10.1103/PhysRevB.105.224313

2022-06-15

Abstract:Specific heat of phonon cavities is investigated in order to analyse the effect of phonon confinement on thermodynamic properties. The specific heat of free standing very thin SiN membranes in the low dimensional limit is measured down to very low temperatures (from 6~K to 50~mK). In the whole temperature range, we measured an excess of specific heat orders of magnitude bigger than the typical value observed in amorphous solids. Below 1~K, a cross-over in $c_p$ to a lower power law is seen, and the value of specific heat of thinner membranes becomes larger than that of thicker ones demonstrating a significant contribution coming from the surface. We show that this high value of the specific heat cannot be explained by the sole contribution of 2D phonon modes (Lamb waves). The excess specific heat, being thickness dependent, could come from tunneling two level systems (TLS) that form in low density regions of amorphous solids located on the surfaces. We also show that the specific heat is strongly tuned by the internal stress of the membrane by orders of magnitude, giving unprecedentedly high values, making low stress SiN very efficient for energy storage at very low temperature.

Mesoscale and Nanoscale Physics
Microscopic description of the low-temperature anomalies in silica and lithium silicate via computer simulations

J. Reinisch,A. Heuer

DOI: https://doi.org/10.48550/arXiv.cond-mat/0609693

2006-09-27

Abstract:Information about the nature of the low-temperature anomalies and in particular the properties of the tunneling systems in silica and lithium silica glasses are revealed via computer simulations. The potential energy landscape of these systems is systematically explored for adjacent pairs of local minima which may act as double-well potentials (DWP) at low temperatures. Three different types of DWP are distinguished, related to perfectly coordinated silica, intrinsic silica defects, and extrinsic defects. Their properties like the spatial extension and the dipole moment are characterized in detail. Furthermore, the absolute number of tunneling systems, i.e. symmetric DWP, is estimated. The results are compared with dielectric echo, specific heat and acoustic experiments on Suprasil I and Suprasil W. A semi-quantitative agreement for all relevant features is obtained.

Disordered Systems and Neural Networks,Materials Science
Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Hui-juan WANG,Cheng CHEN,Lian-wen DENG,Jian-jun JIANG

DOI: https://doi.org/10.3969/j.issn.1673-2812.2007.02.035

2007-01-01

Abstract:Molecular dynamics simulation is performed to study the vacancy-interstitial annihilation in crystalline silicon.We choose the Stillinger-Weber(SW) potential,which is commonly used for silicon,to describe the interaction between atoms. The simulation is calculated by Verlet algorithm and programmed through C++ in the environment of VC++.The result shows that 111 is the preferred combination direction and there exists an energy barrier in the motion,the value of which is between 0.5eV and 1.2eV.
Localized States Within the Gap of Ce3Au3Sb4

Han-Oh Lee,V. A. Sidorov,P. Schlottmann,Cathie Condron,Peter Klavins,Susan M. Kauzlarich,J. D. Thompson,Z. Fisk

DOI: https://doi.org/10.1016/j.physb.2007.10.309

IF: 2.988

2007-01-01

Physica B Condensed Matter

Abstract:The temperature dependence of the specific heat and of the resistivity under pressure has been measured for single crystals of the semiconductor Ce3Au3Sb4. The transport data follow an exponential activation and variable range hopping at low T, consistent with weak disorder and localization, while C/T has a -lnT dependence with large entropy. Thus the properties of Ce3Au3Sb4 are very different from those of ordinary Kondo insulators.
Structural dynamics of a model of amorphous silicon

Zihua Liu,Debabrata Panja,Gerard T. Barkema

DOI: https://doi.org/10.3390/nano13243127

2023-12-08

Abstract:We perform extensive simulations and systematic statistical analyses of the structural dynamics of amorphous silicon. The simulations follow the dynamics introduced by Wooten, Winer and Weaire: the energy is obtained with the Keating potential, and the dynamics consists of bond transpositions proposed at random locations and accepted with the Metropolis acceptance ratio. The structural quantities we track are the variations in time of the lateral lengths ($L_x$,$L_y$,$L_z$) of the cuboid simulation cell. We transform these quantities into the volume $V$ and two aspect ratios $B_1$ and $B_2$. Our analysis reveals that at short times, the mean squared displacement (MSD) for all of them exhibits normal diffusion. At longer times, they cross over to anomalous diffusion, with a temperature-dependent anomalous exponent $\alpha<1$. We analyze our findings in the light of two standard models in statistical physics that feature anomalous dynamics, $viz.$, continuous time random walker (CTRW) and fractional Brownian motion (fBm). We obtain the distribution of waiting times, and find that the data are consistent with a stretched-exponential decay. We also show that the three quantities, $V$, $B_1$ and $B_2$ exhibit negative velocity autocorrelation functions. These observations together suggest that the dynamics of the material belong to the fBm class.

Soft Condensed Matter
Mechanisms of temperature-dependent thermal transport in amorphous silica from machine-learning molecular dynamics

Ting Liang,Penghua Ying,Ke Xu,Zhenqiang Ye,Chao Ling,Zheyong Fan,Jianbin Xu

DOI: https://doi.org/10.1103/PhysRevB.108.184203

2023-11-01

Abstract:Amorphous silica (a-SiO$_2$) is a foundational disordered material for which the thermal transport properties are important for various applications. To accurately model the interatomic interactions in classical molecular dynamics (MD) simulations of thermal transport in a-SiO$_2$, we herein develop an accurate yet highly efficient machine-learned potential model that allowed us to generate a-SiO$_2$ samples closely resembling experimentally produced ones. Using the homogeneous nonequilibrium MD method and a proper quantum-statistical correction to the classical MD results, quantitative agreement with experiments is achieved for the thermal conductivities of bulk and 190 nm-thick a-SiO$_2$ films over a wide range of temperatures. To interrogate the thermal vibrations at different temperatures, we calculated the current correlation functions corresponding to the transverse acoustic (TA) and longitudinal acoustic (LA) collective vibrations. The results reveal that below the Ioffe-Regel crossover frequency, phonons as well-defined excitations, remain applicable in a-SiO$_2$ and play a predominant role at low temperatures, resulting in a temperature-dependent increase in thermal conductivity. In the high-temperature region, more phonons are excited, accompanied by a more intense liquid-like diffusion event. We attribute the temperature-independent thermal conductivity in the high-temperature range of a-SiO$_2$ to the collaborative involvement of excited phonon scattering and liquid-like diffusion in heat conduction. These findings provide physical insights into the thermal transport of a-SiO$_2$ and are expected to be applied to a vast range of amorphous materials.

Materials Science,Atomic Physics,Computational Physics
Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Constantino Grau Turuelo,Cornelia Breitkopf

DOI: https://doi.org/10.3390/cryst13060863

IF: 2.7

2023-05-25

Crystals

Abstract:The control and prediction of morphological changes in annealed void microstructures is an essential and powerful tool for different semiconductor applications, for example, as part of the production of pressure sensors, resonators, or other silicon structures. In this work, with a focus on the void shape evolution of silicon, a novel simulation approach based on the level-set method is introduced to predict the continuous transformation of initial etched nano/micro-sized cylindrical structures at different annealing conditions. The developed model, which is based on a surface diffusion formulation and built in COMSOL Multiphysics® (Stockholm, Sweden), is introduced and compared to experimental literature data as well as with other analytical approaches. Some advantages of the presented model include the capability of simulating other materials under similar phenomena, the simulation of any possible initial geometry, and the visualization of intermediate steps during the annealing processing.

materials science, multidisciplinary,crystallography
The Vibrational Density of States and Specific Heat of Si Nanocrystals

Xinhua Hu,Guozhong Wang,Weimin Wu,Ping Jiang,Jian Zi

DOI: https://doi.org/10.1088/0953-8984/13/39/101

2001-01-01

Journal of Physics Condensed Matter

Abstract:The vibrational density of states and phonon specific heat of Si nanocrystals are studied by means of a lattice dynamical calculation. The vibrational density of states of Si nanocrystals is distinct from the bulk one at low and high frequencies owing to the finite-size effect. At low frequencies there is an excess of the vibrational modes, while there is a deficit at high frequencies. At low frequencies the dependence of the vibrational density of states on frequency is intermediate between linear and quadratic. The specific heat of Si nanocrystals is enhanced as compared to that of the bulk with a maximal excess at around 90 K. The dependence of the specific heat on temperature deviates from the known T3-law for crystalline systems at low temperatures.
Quantum-corrected thickness-dependent thermal conductivity in amorphous silicon predicted by machine learning molecular dynamics simulations

Yanzhou Wang,Zheyong Fan,Ping Qian,Miguel A. Caro,and Tapio Ala-Nissila

DOI: https://doi.org/10.1103/PhysRevB.107.054303

2023-02-07

Physical Review B - Condensed Matter and Materials Physics

Abstract:Amorphous silicon (a-Si) is an important thermal-management material and also serves as an ideal playground for studying heat transport in strongly disordered materials. Theoretical prediction of the thermal conductivity of a-Si in a wide range of temperatures and sample sizes is still a challenge. Herein we present a systematic investigation of the thermal transport properties of a-Si by employing large-scale molecular dynamics (MD) simulations with an accurate and efficient machine learned neuroevolution potential (NEP) trained against abundant reference data calculated at the quantum-mechanical density-functional-theory level. The high efficiency of NEP allows us to study the effects of finite size and quenching rate in the formation of a-Si in great detail. We find that a simulation cell up to 64000 atoms (a cubic cell with a linear size of 11 nm) and a quenching rate down to 1011 K s−1 are required for almost convergent thermal conductivity. Structural properties, including short- and medium-range order as characterized by the pair-correlation function, angular-distribution function, coordination number, ring statistics, and structure factor are studied to demonstrate the accuracy of NEP and to further evaluate the role of quenching rate. Using both the heterogeneous and homogeneous nonequilibrium MD methods and the related spectral decomposition techniques, we calculate the temperature- and thickness-dependent thermal conductivity values of a-Si and show that they agree well with available experimental results from 10 K to room temperature. Our results also highlight the importance of quantum effects in the calculated thermal conductivity and support the quantum-correction method based on the spectral thermal conductivity. https://doi.org/10.1103/PhysRevB.107.054303 ©2023 American Physical Society

English Else
Quantum-corrected thickness-dependent thermal conductivity in amorphous silicon predicted by machine-learning molecular dynamics simulations

Yanzhou Wang,Zheyong Fan,Ping Qian,Miguel A. Caro,Tapio Ala-Nissila

DOI: https://doi.org/10.1103/PhysRevB.107.054303

2023-01-09

Abstract:Amorphous silicon (a-Si) is an important thermal-management material and also serves as an ideal playground for studying heat transport in strongly disordered materials. Theoretical prediction of the thermal conductivity of a-Si in a wide range of temperatures and sample sizes is still a challenge. Herein we present a systematic investigation of the thermal transport properties of a-Si by employing large-scale molecular dynamics (MD) simulations with an accurate and efficient machine-learned neuroevolution potential (NEP) trained against abundant reference data calculated at the quantum-mechanical density-functional-theory level. The high efficiency of NEP allows us to study the effects of finite size and quenching rate in the formation of a-Si in great detail. We find that it requires a simulation cell up to $64,000$ atoms (a cubic cell with a linear size of 11 nm) and a quenching rate down to $10^{11}$ K s$^{-1}$ for fully convergent thermal conductivity. Structural properties, including short- and medium-range order as characterized by the pair correlation function, angular distribution function, coordination number, ring statistics and structure factor are studied to demonstrate the accuracy of NEP and to further evaluate the role of quenching rate. Using both the heterogeneous and the homogeneous nonequilibrium MD methods and the related spectral decomposition techniques, we calculate the temperature- and thickness-dependent thermal conductivity values of a-Si and show that they agree well with available experimental results from 10 K to room temperature. Our results also highlight the importance of quantum effects in the calculated thermal conductivity and support the quantum correction method based on the spectral thermal conductivity.

Materials Science,Computational Physics
Equivalence of the Equilibrium and the Nonequilibrium Molecular Dynamics Methods for Thermal Conductivity Calculations: from Bulk to Nanowire Silicon

Haikuan Dong,Zheyong Fan,Libin Shi,Ari Harju,Tapio Ala-Nissila

DOI: https://doi.org/10.1103/physrevb.97.094305

IF: 3.7

2018-01-01

Physical Review B

Abstract:Molecular dynamics (MD) simulations play an important role in studying heat transport in complex materials. The lattice thermal conductivity can be computed either using the Green-Kubo formula in equilibrium MD (EMD) simulations or using Fourier's law in nonequilibriumMD (NEMD) simulations. These two methods have not been systematically compared for materials with different dimensions and inconsistencies between them have been occasionally reported in the literature. Here we give an in-depth comparison of them in terms of heat transport in three allotropes of Si: three-dimensional bulk silicon, two-dimensional silicene, and quasi-one-dimensional silicon nanowire. By multiplying the correlation time in the Green-Kubo formula with an appropriate effective group velocity, we can express the running thermal conductivity in the EMD method as a function of an effective length and directly compare it to the length-dependent thermal conductivity in the NEMD method. We find that the two methods quantitatively agree with each other for all the systems studied, firmly establishing their equivalence in computing thermal conductivity.
Thermal conductivity of amorphous SiO2 thin film: A molecular dynamics study

Wenhui Zhu,Guang Zheng,Sen Cao,Hu He

DOI: https://doi.org/10.1038/s41598-018-28925-6

IF: 4.6

2018-07-12

Scientific Reports

Abstract:Amorphous SiO2 (a-SiO2) thin films are widely used in integrated circuits (ICs) due to their excellent thermal stability and insulation properties. In this paper, the thermal conductivity of a-SiO2 thin film was systematically investigated using non-equilibrium molecular dynamics (NEMD) simulations. In addition to the size effect and the temperature effect for thermal conductivity of a-SiO2 thin films, the effect of defects induced thermal conductivity tuning was also examined. It was found that the thermal conductivity of a-SiO2 thin films is insensitive to the temperature from −55 °C to 150 °C. Nevertheless, in the range of the thickness in this work, the thermal conductivity of the crystalline SiO2 (c-SiO2) thin films conforms to the T−α with the exponent range from −0.12 to −0.37, and the thinner films are less sensitive to temperature. Meanwhile, the thermal conductivity of a-SiO2 with thickness beyond 4.26 nm has no significant size effect, which is consistent with the experimental results. Compared with c-SiO2 thin film, the thermal conductivity of a-SiO2 is less sensitive to defects. Particularly, the effect of spherical void defects on the thermal conductivity of a-SiO2 is followed by Coherent Potential model, which is helpful for the design of low-K material based porous a-SiO2 thin film in microelectronics.

multidisciplinary sciences
Violation of the T −1 Relationship in the Lattice Thermal Conductivity of Mg 3 Sb 2 with Locally Asymmetric Vibrations

Yifan Zhu,Yi Xia,Yancheng Wang,Ye Sheng,Jiong Yang,Chenguang Fu,Airan Li,Tiejun Zhu,Jun Luo,Christopher Wolverton,G. Jeffrey Snyder,Jianjun Liu,Wenqing Zhang

DOI: https://doi.org/10.34133/2020/4589786

IF: 11

2020-11-30

Research

Abstract:Most crystalline materials follow the guidelines of T − 1 temperature-dependent lattice thermal conductivity ( κ L ) at elevated temperatures. Here, we observe a weak temperature dependence of κ L in Mg 3 Sb 2 , T − 0.48 from theory and T − 0.57 from measurements, based on a comprehensive study combining ab initio molecular dynamics calculations and experimental measurements on single crystal Mg 3 Sb 2 . These results can be understood in terms of the so-called “phonon renormalization” effects due to the strong temperature dependence of the interatomic force constants (IFCs). The increasing temperature leads to the frequency upshifting for those low-frequency phonons dominating heat transport, and more importantly, the phonon-phonon interactions are weakened. In-depth analysis reveals that the phenomenon is closely related to the temperature-induced asymmetric movements of Mg atoms within MgSb 4 tetrahedron. With increasing temperature, these Mg atoms tend to locate at the areas with relatively low force in the force profile, leading to reduced effective 3 rd -order IFCs. The locally asymmetrical atomic movements at elevated temperatures can be further treated as an indicator of temperature-induced variations of IFCs and thus relatively strong phonon renormalization. The present work sheds light on the fundamental origins of anomalous temperature dependence of κ L in thermoelectrics.

multidisciplinary sciences
Significant Anharmonicity of Thermal Transport in Amorphous Silica at High Temperature

Lei Yang,Bing-Yang Cao

DOI: https://doi.org/10.1002/pssr.202200217

2022-01-01

physica status solidi (RRL) - Rapid Research Letters

Abstract:The anharmonicity of thermal transport in amorphous solids is underappreciated and inadequately understood, although considerable attention is paid to that of crystals. Herein, the anharmonic effects on the heat conduction of amorphous silica are investigated by combining the normal mode decomposition method with the Wigner transport equation. The existence of significant anharmonicity in amorphous silica, including temperature‐dependent linewidths and frequency shifts of the vibrational modes, is demonstrated. By considering the anharmonic effects, the predicted temperature dependence of thermal conductivities at high temperatures agrees well with the increasing trend observed in experiments. The underlying mechanisms are further revealed. The anharmonic frequency shifts notably affect the strength of coupling between pairs of vibrational modes and dictate the positive temperature dependence, whereas the increasing linewidths with increasing temperature are of minor importance. This work contributes to the understanding of the anharmonicity of thermal vibrations and heat conduction in amorphous materials.
Examining normal modes as fundamental heat carriers in amorphous solids: the case of amorphous silicon

Jaeyun Moon

DOI: https://doi.org/10.1063/5.0043597

2021-07-30

Abstract:Normal mode decomposition of atomic vibrations has been used to provide microscopic under-standing of thermal transport in amorphous solids for decades. In normal mode methods, it is naturally assumed that atoms vibrate around their equilibrium positions and that individual normal modes are the fundamental vibrational excitations transporting heat. With the abundance of predictions from normal mode methods and experimental measurements now available, we care-fully analyze these calculations in amorphous silicon, a model amorphous solid. We find a number of discrepancies, suggesting that treating individual normal modes as fundamental heat carriers may not be accurate in amorphous solids. Further, our classical and ab-initio molecular dynamics simulations of amorphous silicon demonstrate a large degree of atomic diffusion, especially at high temperatures, leading to the conclusion that thermal transport in amorphous solids could be better described starting from the perspective of liquid dynamics rather than from crystalline solids

Materials Science
Low Temperature Specific Heat of some Quantum Mean Field glassy phases

Gregory Schehr

DOI: https://doi.org/10.1103/PhysRevB.71.184204

2004-11-16

Abstract:We investigate analytically the low temperature behavior of the specific heat $C_v(T)$ for a large class of quantum disordered models within Mean Field approximation. This includes the vibrational modes of a lattice pinned by impurity disorder in the quantum regime, the quantum spherical $p$-spin-glass and a quantum Heisenberg spin glass. We exhibit a general mechanism, common to all these models, arising from the so-called marginality condition, responsible for the cancellation of the linear and quadratic contributions in $T$ in the specific heat. We thus find for all these models the Mean Field result $C_v(T) \propto T^3$.

Disordered Systems and Neural Networks

Decay of mean-values of multiplicative functions

Anomalous tension–compression asymmetry in amorphous silicon: insights from atomistic simulations and elastoplastic constitutive modeling

Ab initio studies of the impact of the Debye-Waller factor on the structural and dynamical properties of amorphous semiconductors: The case of $a$-Si

Non-equilbrium Dynamics in Amorphous Si_3B_3N_7

Specific Heat of Thin Phonon Cavities at Low Temperature: Very High Values Revealed by ZeptoJoule Calorimetry

Microscopic description of the low-temperature anomalies in silica and lithium silicate via computer simulations

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Localized States Within the Gap of Ce3Au3Sb4

Structural dynamics of a model of amorphous silicon

Mechanisms of temperature-dependent thermal transport in amorphous silica from machine-learning molecular dynamics

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

The Vibrational Density of States and Specific Heat of Si Nanocrystals

Quantum-corrected thickness-dependent thermal conductivity in amorphous silicon predicted by machine learning molecular dynamics simulations

Quantum-corrected thickness-dependent thermal conductivity in amorphous silicon predicted by machine-learning molecular dynamics simulations

Equivalence of the Equilibrium and the Nonequilibrium Molecular Dynamics Methods for Thermal Conductivity Calculations: from Bulk to Nanowire Silicon

Thermal conductivity of amorphous SiO2 thin film: A molecular dynamics study

Violation of the T −1 Relationship in the Lattice Thermal Conductivity of Mg 3 Sb 2 with Locally Asymmetric Vibrations

Significant Anharmonicity of Thermal Transport in Amorphous Silica at High Temperature

Examining normal modes as fundamental heat carriers in amorphous solids: the case of amorphous silicon

Low Temperature Specific Heat of some Quantum Mean Field glassy phases