Argon physisorption as structural probe for endohedrally doped silicon clusters.

E. Janssens,P. Gruene,G. Meijer,L. Wöste,P. Lievens,A. Fielicke
DOI: https://doi.org/10.1103/PHYSREVLETT.99.063401
IF: 8.6
2007-08-09
Physical Review Letters
Abstract:We report on an element-dependent critical size for argon physisorption at 80 K on transition-metal-doped silicon clusters. Argon does not attach to elemental silicon clusters but only to surface-located transition-metal atoms. Thus physisorption provides structural information. Specifically, the minimal cluster size for the formation of endohedral singly metal-doped silicon cages has been determined. The observed critical size for doubly doped silicon clusters indicates that larger caged molecules can be formed, eventually leading to the growth of metal-doped silicon nanorods.
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