[Use and results of thrombolytic agents in myocardial infarction].

C. Guérot,N. Laffay,R. Tricot

1983-11-01

Abstract:

What problem does this paper attempt to address?

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Tianqi Deng,Xiaodong Pi,Xiaodong Pi

DOI: https://doi.org/10.1103/physrevb.107.235203

2023-01-01

Physical Review

Abstract:Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift mobilities, is of particular importance. Here we study the effect of anisotropy by computing the drift and Hall mobility tensors of a technologically important wide-band-gap semiconductor, $4H$-silicon carbide ($4H$-SiC), from first principles. With $GW$ electronic structure and ab initio electron-phonon interactions, we solve the Boltzmann transport equation without fitting parameters. The calculated electron and hole mobilities agree with experimental data. The electron Hall factor strongly depends on the direction of external magnetic field $\mathbf{B}$, and the hole Hall factor exhibits different temperature dependency for $\mathbf{B}\ensuremath{\parallel}c$ and $\mathbf{B}\ensuremath{\perp}c$. We explain this by the different equienergy surface shape arising from the anisotropic and nonparabolic band structure, together with the energy-dependent electron-phonon scattering.
Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime

C. S. Mayberry,Danhong Huang,G. Balakrishnan,C. Kouhestani,N. Islam,S. R. J. Brueck,A. K. Sharma

DOI: https://doi.org/10.1063/1.4931151

2015-05-23

Abstract:We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed oxide charges in the thermally grown SiO2 layer and the Si/SiO2 interface, the effective Si cross-sectional wall widths were considerably narrower than the actual physical widths, due the formation of depletion regions from both sides. These nanostructures were configured into a metal-semiconductor-metal device configuration that was isolated from the substrate region. Dark currents, dc-photo-response, and carrier "time-of-flight" response measurements using a mode-locked femtosecond laser, were used in the study. In the narrowest wall devices, a considerable increase in conductivity was observed as a result of higher carrier mobilities due to lateral constriction and strain. The strain effects, which include the reversal splitting of light- and heavy- hole bands as well as the decrease of conduction-band effective mass by reduced Si bandgap energy, are formulated in our microscopic model for explaining the experimentally observed enhancements in both conduction- and valence-band mobilities with reduced Si wall thickness. The role of the biaxial strain buffing depth is elucidated and the quasi-quantum effect for the saturation hole mobility at small wall thickness is also found and explained. Specifically, the enhancements of the valence-band and conduction-band mobilities are found to be associated with different aspects of theoretical model.

Mesoscale and Nanoscale Physics
Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Tianqi Deng,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1103/PhysRevB.107.235203

IF: 3.7

2023-01-01

Physical Review B

Abstract:Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift mobilities, is of particular importance. Here we study the effect of anisotropy by computing the drift and Hall mobility tensors of a technologically important wide-band-gap semiconductor, 4H-silicon carbide (4H-SiC), from first principles. With GW electronic structure and ab initio electron-phonon interactions, we solve the Boltzmann transport equation without fitting parameters. The calculated electron and hole mobilities agree with experimental data. The electron Hall factor strongly depends on the direction of external magnetic field B, and the hole Hall factor exhibits different temperature dependency for B II c and B & BOTTOM; c. We explain this by the different equienergy surface shape arising from the anisotropic and nonparabolic band structure, together with the energy-dependent electron-phonon scattering.
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Julian Becker,Eckhart Fretwurst,Robert Klanner

DOI: https://doi.org/10.1016/j.sse.2010.10.00

2010-10-14

Abstract:The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for <111> and <100> crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p^+nn^+ diodes in the temperature range between -30°C and 50°C and electric fields of 2x10^3 V/cm to 2x10^4 V/cm.

Instrumentation and Detectors
Charged impurity scattering and mobility in gated silicon nanowires

Martin P. Persson,Hector Mera,Yann-Michel Niquet,Christophe Delerue,Mamadou Diarra

DOI: https://doi.org/10.1103/PhysRevB.82.115318

2010-06-25

Abstract:We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is calculated with a tight-binding method and the transport properties with a Landauer-Buttiker Green functions approach and the linearized Boltzmann transport equation (LBTE) in the first Born approximation. Based on our numerical results we argue that: (1) There are large differences between Phosphorous (P) and Boron (B) doped systems, acceptors behaving as tunnel barriers for the electrons, while donors give rise to Fano resonances in the transmission. (2) As a consequence, the mobility is much larger in P- than in B-doped nanowires at low carrier density, but can be larger in B-doped nanowires at high carrier density. (3) The resistance of a single impurity is strongly dependent on its radial position in the nanowire, especially for acceptors. (4) As a result of subband structure and screening effects, the impurity-limited mobility can be larger in thin nanowires embedded in HfO2 than in bulk Si. Acceptors might, however, strongly hinder the flow of electrons in thin nanowires embedded in SiO2. (5) The perturbative LBTE largely fails to predict the correct mobilities in quantum-confined nanowires.

Mesoscale and Nanoscale Physics
Phonon-limited mobility for electrons and holes in highly-strained silicon

Nicolas Roisin,Guillaume Brunin,Gian-Marco Rignanese,Denis Flandre,Jean-Pierre Raskin,Samuel Poncé

DOI: https://doi.org/10.1038/s41524-024-01425-0

IF: 12.256

2024-10-13

npj Computational Materials

Abstract:Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compute the π 11 and π 12 electron piezoresistances based on the low-strain change of resistivity with temperature in the range 200 K to 400 K, in excellent agreement with experiment. We also predict them for holes which were only measured at room temperature. Remarkably, for electrons in the transverse direction, we predict a minimum room-temperature mobility about 1200 cm 2 V −1 s −1 at 0.3% uniaxial tensile strain while we observe a monotonous increase of the longitudinal transport, reaching a value of 2200 cm 2 V −1 s −1 at high strain. We confirm these findings experimentally using four-point bending measurements, establishing the reliability of our first-principles calculations. For holes, we find that the transport is almost unaffected by strain up to 0.3% uniaxial tensile strain and then rises significantly, more than doubling at 2% strain. Our findings open new perspectives to boost the mobility by applying a stress in the [100] direction. This is particularly interesting for holes for which shear strain was thought for a long time to be the only way to enhance the mobility.

materials science, multidisciplinary,chemistry, physical
Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation

Neophytos Neophytou,Hans Kosina

DOI: https://doi.org/10.48550/arXiv.1108.4866

2011-08-24

Materials Science

Abstract:A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires (NWs) up to 12nm in diameter. The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation. Linearized Boltzmann transport theory is applied, including carrier scattering by phonons, surface roughness (SRS), and impurities. We present a comprehensive investigation of the low-field mobility in silicon NWs considering: i) n- and p-type NWs, ii) [100], [110], and [111] transport orientations, and iii) diameters from D=12nm (electronically almost bulk-like) down to D=3nm (ultra-scaled). The simulation results display strong variations in the characteristics of the different NW types. For n-type NWs, phonon scattering and SRS become stronger as the diameter is reduced and drastically degrade the mobility by up to an order of magnitude depending on the orientation. For the [111] and [110] p-type NWs, on the other hand, large mobility enhancements (of the order of ~4X) can be achieved as the diameter scales down to D=3nm. This enhancement originates from the increase in the subband curvatures as the diameter is scaled. It overcompensates for the mobility reduction caused by SRS in narrow NWs and offers an advantage with diameter scaling. Our results may provide understanding of recent experimental measurements, as well as guidance in the design of NW channel devices with improved transport properties.
On mobility of electrons in a shallow Fermi sea over a rough seafloor

Kamran Behnia

DOI: https://doi.org/10.1088/0953-8984/27/37/375501

2015-09-02

Abstract:Several doped semiconductors, in contrast to heavily-doped silicon and germanium, host extremely mobile carriers, which give rise to quantum oscillations detectable in relatively low magnetic fields. The small Fermi energy in these dilute metals quantifies the depth of the Fermi sea. When the carrier density exceeds a threshold, accessible thanks to the long Bohr radius of the parent insulator, the local seafloor is carved by distant dopants. In such conditions, with a random distribution of dopants, the probability of finding an island or a trench depends on on the effective Bohr radius, a$_{B}^{*}$ and the carrier density, n. This picture yields an expression for electron mobility with a random distribution of dopants: $\mu_{RD}\propto $(a$_{B}^{*})^{1/2}$ n$^{-5/6}$, in reasonable agreement with the magnitude and concentration dependence of the low-temperature mobility in three dilute metals whose insulating parents are a wide-gap (SrTiO$_{3}$), a narrow-gap (PbTe) and a "zero"-gap (TlBiSSe) semiconductor.

Materials Science,Strongly Correlated Electrons
Relationship Between Mobilities from Time-Of-Flight and Dark-Injection Space-Charge-Limited Current Measurements for Organic Semiconductors: A Monte Carlo Study

Haoyuan Li,Lian Duan,Deqiang Zhang,Guifang Dong,Juan Qiao,Liduo Wang,Yong Qiu

DOI: https://doi.org/10.1021/jp411948d

2014-01-01

Abstract:The dark-injection space-charge-limited current (DI-SCLC) and the time-of-flight (TOF) measurements are both widely used methods to obtain the charge mobilities of organic materials. The current formula used to calculate the mobility in the DI-SCLC measurement is based on the relationship that the peak time equals 0.787 times the transit time in the TOF measurement. This conclusion, however, is reached by assuming a constant mobility and a negligible carrier diffusion, which is not valid for organic materials. Here, we perform Monte Carlo simulations of the multiparticle charge carrier movement in the TOF and DI-SCLC measurements. We found that the relationship between the peak time and the transit time depends on the disorder of the system. For organic semiconductors, the current formula used in the DI-SCLC measurement is only valid when the energetic disorder is small or when the temperature is high, and large deviation will occur otherwise, which is due to the enhanced charge transport induced by high carrier density and inhomogeneous electric field in the space-charge-limited case.
Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement

Neophytos Neophytou,Hans Kosina

DOI: https://doi.org/10.1063/1.3631680

2011-09-08

Abstract:We report on the hole mobility of ultra-narrow [110] Si channels as a function of the confinement length scale. We employing atomistic bandstructure calculations and linearized Boltzmann transport approach. The phonon-limited mobility of holes in thin [110] channels can be improved by more than 3X as the thickness of the (110) confining surface is reduced down to 3nm. This behavior originates from confinement induced bandstructure changes that decrease the hole effective mass and the scattering rates. Our results provide explanations for recent mobility measurements in nanobelts of similar dimensions.

Materials Science
Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires

Jingang Li,Rundi Yang,Yoonsoo Rho,Penghong Ci,Matthew Eliceiri,Hee K. Park,Junqiao Wu,Costas P. Grigoropoulos

DOI: https://doi.org/10.1021/acs.nanolett.2c04790

2022-11-16

Abstract:Carrier distribution and dynamics in semiconductor materials often govern their physical properties that are critical to functionalities and performance in industrial applications. The continued miniaturization of electronic and photonic devices calls for tools to probe carrier behavior in semiconductors simultaneously at the picosecond time and nanometer length scales. Here, we report pump-probe optical nanoscopy in the visible-near-infrared spectral region to characterize the carrier dynamics in silicon nanostructures. By coupling experiments with the point-dipole model, we resolve the size-dependent photoexcited carrier lifetime in individual silicon nanowires. We further demonstrate local carrier decay time mapping in silicon nanostructures with a sub-50 nm spatial resolution. Our study enables the nanoimaging of ultrafast carrier kinetics, which will find promising applications in the future design of a broad range of electronic, photonic, and optoelectronic devices.

Materials Science,Optics
Quantum Transport Length Scales in Silicon-based Semiconducting Nanowires: Surface Roughness Effects

Aurelien Lherbier,Martin Persson,Yann-Michel Niquet,Francois Triozon,Stephan Roche

DOI: https://doi.org/10.1103/PhysRevB.77.085301

2008-01-10

Abstract:We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are explored numerically by using efficient real space order N computational approaches of both Kubo-Greenwood and Landauer-Buttiker transport frameworks. Quantitative estimations of the elastic mean free paths, charge mobilities and localization lengths are performed as a function of the correlation length of the surface roughness disorder. The obtained values for charge mobilities well compare with the experimental estimates of the most performant undoped nanowires. Further the limitations of the Thouless relationship between the mean free path and the localization length are outlined.

Disordered Systems and Neural Networks,Mesoscale and Nanoscale Physics
Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

Shuo Zhang,Hao Xie,Jun Z. Huang,Wenchao Chen,Jie Liao,Wen-Yan Yin

DOI: https://doi.org/10.1109/ted.2022.3188231

IF: 3.1

2022-09-03

IEEE Transactions on Electron Devices

Abstract:The low-field hole mobility in p-type inversion-mode silicon (Si) and germanium (Ge) nanosheet (NS) transistors is rigorously calculated by a physics-based theoretical model, where momentum scatterings from phonons, charged impurities, and surface roughness are all considered. With a holistic physical picture of carrier scattering mechanisms, the effects of material, crystal orientation, channel width, strain/stress, and temperature are investigated comprehensively by the in-house developed numerical simulator. This sound and prospective theoretical work paves the way for clarifying the physics of achieving high hole mobility in ultrascaled NS channels, presenting some valuable insights and guidelines about the device design and fabrication for the next-generation CMOS technology.

engineering, electrical & electronic,physics, applied
Investigations on the Physical Understanding of Mobility in MOSFETs - from Drift-Diffusion to Quasi-Ballistic

Hongwei Liu,Runsheng Wang,Ru Huang,Xing Zhang

DOI: https://doi.org/10.1109/icsict.2008.4734549

2008-01-01

Abstract:This paper provides scattering matrix method to analyze the transport property in nanoscale MOSFETs. A unified mobility model with analytical expression is presented, which can cover the whole range from drift-diffusion to quasi-ballistic region. The inherent mobility reduction in MOSFETs with the shrinking of the channel length is extensively investigated from the theory and well agrees with the experiments, but the low-field free path is nearly constant. It is found that the reduction of measured mobility in nano-MOSFETs is only an apparent phenomenon. The relationship between the low-field mean free path lambda(0) and the driving current in nano-MOSFETs is discussed. The results indicate it is the lambda(0) instead of apparent mobility that determine the transport characteristics in nano-devices.
Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

Jiahui Duan,Jinjuan Xiang,Lixing Zhou,Xiaolei Wang,Xueli Ma,Wenwu Wang

DOI: https://doi.org/10.35848/1347-4065/ab7722

IF: 1.5

2020-02-28

Japanese Journal of Applied Physics

Abstract:We theoretically calculate the electron mobility in silicon nanowire metal-oxide-semiconductorfield-effect transistor. The calculation of electron mobility is based on the Kubo–Greenwoodformulation and the self-consistent solutions of Schrödinger and Poisson equations. Phononscattering (PHS), Coulomb scattering, and surface roughness scattering (SRS) mechanisms areconsidered in this study. The nonlinear SRS model is employed because it can reproduce theexperimental mobility with realistic surface roughness parameters. The simulation demonstrates thatPHS and SRS are both vital scattering mechanisms. The rate of SRS significantly increases withdecreasing device size, and SRS is the dominant scattering mechanism in ultra-narrow siliconnanowires.

physics, applied
Transport in two-dimensional modulation doped semiconductor structures

S. Das Sarma,E. H. Hwang,S. Kodiyalam,L. N. Pfeiffer,K. W. West

DOI: https://doi.org/10.1103/PhysRevB.91.205304

2015-05-07

Abstract:We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultra high-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultra-pure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

Mesoscale and Nanoscale Physics,Materials Science
Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors

Priyam Pathak,Deepjyoti Deb,Dwipayan Nath,Prachuryya Subash Das,Hirakjyoti Choudhury,Rupam Goswami

DOI: https://doi.org/10.1007/s11664-023-10852-6

IF: 2.1

2024-02-02

Journal of Electronic Materials

Abstract:This article reports the effects of incomplete ionization on the low power performance of silicon-on-insulator (SOI) n-p-n dual-gate tunnel field-effect transistors (TFET) through calibrated technology computer-aided design simulations. The effects of drain-induced barrier thinning and resistivity profiles are reported for the proposed device in the presence and absence of incomplete ionization. A current sensitivity parameter is considered for analysis, which refers to the deviation of the drain current of the device with incomplete ionization included from the case without incomplete ionization. Considering the Altermatt incomplete ionization parameters for boron and arsenic dopants in the device of interest, this article presents the investigation of incomplete ionization for various gate work functions, and mobility models (doping-dependent models: Masetti, Arora, and Philips Unified, and mobility degradation models: University of Bologna, Lombardi, and Inversion and Accumulation Layer). The impact of a trap-assisted tunneling model on sensitivity is also reported.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement

Sreenadh Surapaneni,Jaya Jha,Vikas Pendem,Yogendra Kumar Yadav,Swaroop Ganguly,Dipankar Saha

DOI: https://doi.org/10.1088/1361-6528/ac1a3f

IF: 3.5

2021-08-18

Nanotechnology

Abstract:Transport in GaN-based nanoscale devices is of supreme importance for various applications. While the transport in bulk and two-dimensional (2D) structures is relatively well understood, understanding one-dimensional (1D) transport is still at its nascent stage. More importantly, the nanoscale structures may not operate at an explicit dimension of 2D and 1D. The understanding of the transport becomes limited on such an occasion. Here, we investigate the evolution of low-field mobility in GaN-based nanostructures for increasing quantum confinement in a uniform framework. We have used a split-gate architecture to change the degree of quantum confinement electrostatically. The low-field mobility is experimentally determined, which is then matched using scattering theory. It is shown that acoustic phonon, polar optical phonon, and scattering from piezoelectric fields dominate these devices. Contrary to intuition, the piezoelectric fields play the most determining role in low-field regimes. In addition, the evolving density of states and 2D phonon confinement, in addition to electron confinement, lead to a non-monotonic change in mobility. A decrease in the number of states near conduction band minima tends to increase mobility by reducing the number of final scattering states for the electrons. A larger overlap between confined electrons and phonons aggravates scattering and reduces mobility. These two competing effects can lead to many possible values for mobility during device operation.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

S. Das Sarma,E. H. Hwang

DOI: https://doi.org/10.1103/PhysRevLett.83.164

1999-06-17

Abstract:We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.

Disordered Systems and Neural Networks
Comprehensive Mobility Study of Silicon Nanowire Transistors Using Multi-Subband Models

Cristina Medina-Bailon,Mihail Nedjalkov,Vihar Georgiev,Siegfried Selberherr,Asen Asenov

DOI: https://doi.org/10.1088/2632-959x/acdb8a

2023-06-06

Nano Express

Abstract:Spatial confinement is important in advanced More Moore devices, such as nanowire transistors (NWTs), where the basic charge transport properties must be revised beyond the bulk crystal assumptions. This work presents a comprehensive and general overview of the electron mobility in aggressively-scaled Si NWTs in order to demonstrate the effect of quantum confinement on this topic, establishing its dependence on numerous physical factors (shape, diameter, and orientation). The mobility evaluation makes use of a unique simulation framework and innovative multi-subband calculations of the scattering rates. We show that 1) the effect of surface roughness scattering is more pronounced at higher sheet densities, 2) ionized impurity scattering seriously degrades the mobility in highly-doped NWTs, and 3) the cross-section shape affects directly the subband parameters and the mobility, with the elliptical NWTs giving the best performance for the same cross-sectional area.

English Else

[Use and results of thrombolytic agents in myocardial infarction].

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Charged impurity scattering and mobility in gated silicon nanowires

Phonon-limited mobility for electrons and holes in highly-strained silicon

Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation

On mobility of electrons in a shallow Fermi sea over a rough seafloor

Relationship Between Mobilities from Time-Of-Flight and Dark-Injection Space-Charge-Limited Current Measurements for Organic Semiconductors: A Monte Carlo Study

Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement

Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires

Quantum Transport Length Scales in Silicon-based Semiconducting Nanowires: Surface Roughness Effects

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

Investigations on the Physical Understanding of Mobility in MOSFETs - from Drift-Diffusion to Quasi-Ballistic

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

Transport in two-dimensional modulation doped semiconductor structures

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors

Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

Comprehensive Mobility Study of Silicon Nanowire Transistors Using Multi-Subband Models