V.I. Kozub,C. Oligschleger
Abstract:Electron transport through amorphous monatomic metallic structures generated earlier by molecular dynamics simulations is studied numerically. The interference of electronic trajectories backscattered by the structural disorder probes the multistable structural relaxations responsible for low-frequency noise in real metallic contacts. The structure of these modes is visualized; the dependence of noise magnitude on size and structure of the modes is studied. The transition from multistable behaviour to a more complex one is observed for temperatures far below the melting temperature. The current fluctuations observed numerically resemble the complex behaviour reported earlier for current noise in small metallic structures at moderate temperatures.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the microscopic mechanism of low - frequency noise (1/f noise) in disordered metal point contacts. Specifically, the authors focus on the nature of "fluctuators" that cause current fluctuations in these systems. These fluct uators are thought to be related to structural defects, and they can switch between two possible configurations, thereby causing "telegraph" noise in resistance.
### Main problems
1. **Understanding of microscopic mechanisms**: At present, the microscopic properties of these fluct uators are not yet clear, especially at low temperatures, where these fluct uators are considered to be structural defects related to two - level systems.
2. **Description of complex behaviors**: Some experiments have revealed more complex non - stationary chaotic behaviors that cannot be explained by the existing soft - potential model. Therefore, microscopic analysis is required to better understand these phenomena.
### Research methods
To study these problems, the authors used molecular dynamics simulations to generate disordered monoatomic metal structures and studied electron transport properties by numerical methods. Specifically:
- **Structure generation**: Disorder ed metal structures, including cubic micro - bridges and selenide glasses, were generated using molecular dynamics simulations.
- **Electron transport simulation**: Based on the generated structures, the wave optics approach and the Landauer formula were used to calculate the backscattering coefficient and the change in conductance.
- **Study of multistable structures**: By monitoring the relaxation process of the structure at different temperatures, multistable structures and their influence on current fluctuations were identified.
### Main findings
1. **Local atomic arrangement**: The local atomic arrangements that lead to multistable configurations were identified.
2. **Temperature dependence**: A transition from simple telegraph signals to more complex behaviors was observed, which is consistent with experimental results, and the ratio of the critical temperature to the melting point also conforms to the experimental data.
3. **Fluctuation amplitude**: The amplitude of resistance fluctuations and its relationship with the number of atoms constituting the fluct uator were studied, and the simulation results are consistent with the experiments.
### Conclusions
Through numerical simulations, the authors successfully reproduced the current fluctuation behaviors observed in the experiments and provided new insights for further understanding of low - frequency noise in disordered metal point contacts. In particular, their research shows that the behavior of fluct uators can be explained by the multistable relaxation of local atomic arrangements, which provides an important reference for future theoretical and experimental research.
### Formula summary
- **Landauer formula**:
\[
G=\frac{e^{2}}{h} \sum_{\alpha}(1 - R_{\alpha})
\]
where \(R_{\alpha}\) is the reflection coefficient of channel \(\alpha\).
- **Backscattering coefficient**:
\[
R_{\alpha}=\frac{1}{v_{\perp, \alpha}|\psi_{\alpha}|^{2}} \int_{S} d^{2}r\frac{\hbar}{2m}(\langle\psi_{s, \alpha}|\nabla|\psi_{s, \alpha}\rangle + \text{c.c.})
\]
- **Conductance change**:
\[
W_{b}\equiv\frac{\delta G_{b}}{G}=F^{2} \sum_{\alpha}(1 - R_{\alpha})\cdot\sum_{\alpha} \int_{S} d^{2}r\cdot\sum_{i,j}\cos(k_{F}(|r - R_{i}| - |r - R_{j}|)+k_{\alpha}(R_{i} - R_{j}))
\]
These formulas are used to describe electron transport and backscattering processes and help understand the microscopic mechanism of current fluctuations.