Abstract:Ferroelectricity in hafnia fluoride analogues has been widely investigated for nonvolatile memory applications. Although ALD of HfO 2 technology is enough mature for CMOS technology, hafnia-based ferroelectrics still suffer from major reliability issues such as relaxation, imprint, fatigue, and breakdown. 1 These reliability characteristics are thought to be related to the interface conditions between the ferroelectric film and the electrode. Thus, many reports suggested routes to enhance reliability and ferroelectric characteristics by modifying the interface states of the metal-ferroelectric-metal (MFM) capacitors. Unfortunately, only few reports disclose direct observation on evolution of interface formation and its mechanism. Recently, it is reported that scaling down the ferroelectric hafnia-based films to a few nm range dramatically improves the MFM capacitors’ reliability where the series capacitance and surface effect dominate, making it crucial to understand the interface properties carefully. 2 In this presentation, we perform In-situ characterization using reflectance absorption infrared spectroscopy (RAIRS) to monitor the surface reaction and interface formation while HfOx ALD using TDMA-Hf with various oxidation reactants, such as H 2 O, O 3 , and anhydrous H 2 O 2. TiN and Pt bottom electrodes are investigated at 250 °C. The RAIRS results show that the initial exposure of the oxidant generates the most amount of oxidation on the TiN surface by showing Ti-O and TiN-O peaks which were not observed for the Pt substrate. Moreover, the Ti-O and TiN-O peak area increase versus the dosing time of oxidant was minimum for H 2 O, and O 3 showed continuous peak increase even after 12 s exposure. Interestingly, for the H 2 O 2 case, there was almost no peak increase in the Ti-O bond region like H 2 O, but the TiN-O and TiO-O peaks appeared after the first 3 s and saturated after 6 s exposure. Also, not only on the TiN substrate, the peak for O-O stretching was observed for the Pt substrate as well, indicating that the H 2 O 2 generates self-limiting peroxide bonds on the surface with a minimum interface formation. This suppressed interface formation with superior film properties using H 2 O 2 might be the reason behind the robust reliability of the H 2 O 2 -based HZO capacitor. We are going to report reliability characteristics in conjunction with interface evolution. Acknowledements: We thank to YEST and KEIT for supporting the project through ISTD Program (No.20010806). This work is also supported by GRC-LMD program (task#3001.001) through SRC. The BRUTE hydrogen peroxide was provided by RASIRC. Ozone generator for TMEIC References 1 J. Mohan et al., ACS AELM , 4, 4 (2022). 2 K. Toprasertpong et al., ACS AMI, 14 (2022).

In-Situ Reflectance Absorption Infra-Red Spectroscopy (RAIRS) Study on ALD of HfO2 on TiN and Pt Electrodes

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Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

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First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics via Inserting AlN Interlayer

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

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Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memory.

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

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Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Exploring the role of TiN electrodes in the formation of ferroelectric HfxZr1-xO2 thin films through transmission electron microscopy