H. C. W. Tso,D. J. W. Geldart,P. Vasilopoulos
Abstract:Momentum transfer due to Coulomb interaction between two parallel, two-dimensional, narrow, and spatially separated layers, when a current I_{drive} is driven through one layer, is studied in the presence of a perpendicular magnetic field B. The current induced in the drag layer, I_{drag}, is evaluated self-consistently with I_{drive} as a parameter. I_{drag} can be positive or negative depending on the value of the filling factor \nu of the highest occupied bulk Landau level (LL). For a fully occupied LL, I_{drag} is negative, i.e., it flows opposite to I_{drive}, whereas it is positive for a half-filled LL. When the circuit is opened in the drag layer, a voltage \Delta V_{drag} develops in it; it is negative for a half-filled LL and positive for a fully occupied LL. This positive \Delta V_{drag}, expressing a negative Coulomb drag, results from energetically favored near-edge inter-LL transitions that occur when the highest occupied bulk LL and the LL just above it become degenerate.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in the presence of a vertical magnetic field, study the momentum transfer between two parallel, two - dimensional, narrow and spatially separated quantum Hall channels. Specifically, when a driving current \(I_{\text{drive}}\) passes through one layer, due to Coulomb interaction, a current \(I_{\text{drag}}\) will be induced in the other layer (called the drag layer). This study focuses on how the sign and magnitude of the drag current \(I_{\text{drag}}\) depend on the filling factor \(\nu\) of the highest occupied bulk Landau level (LL).
### Research Background and Problem Description
1. **System Setup**:
- Two parallel quantum Hall strips (quantum Hall bars), with a distance \(d\) between them, zero thickness, width \(L_x = w\), and length \(L_y = L\gg\ell_c\) (magnetic length).
- Electrons are confined by an infinitely high potential barrier in the \(x\) - direction.
- There is a magnetic field \(B=-B\hat{z}\) perpendicular to the plane of the strips.
2. **Research Objectives**:
- When a driving current \(I_{\text{drive}}\) passes through one strip, study the drag current \(I_{\text{drag}}\) in the other strip.
- Explore the direction (positive or negative) of the drag current \(I_{\text{drag}}\) and its relationship with the filling factor \(\nu\).
3. **Key Findings**:
- For the fully occupied highest Landau level (i.e., \(\nu = 1\)), the drag current \(I_{\text{drag}}\) is negative, meaning it flows in the opposite direction to the driving current \(I_{\text{drive}}\).
- For the half - occupied highest Landau level (i.e., \(\nu=0.5\)), the drag current \(I_{\text{drag}}\) is positive, meaning it flows in the same direction as the driving current \(I_{\text{drive}}\).
- When the circuit is open in the drag layer, a voltage \(\Delta V_{\text{drag}}\) will be generated in the drag layer. For the half - occupied highest Landau level, this voltage is negative; for the fully occupied highest Landau level, this voltage is positive.
### Physical Mechanisms
- **Near - edge inter - layer transitions**: When the highest occupied Landau level is close to full occupancy, near - edge inter - layer transitions will occur, and these transitions cause the drag current or drag voltage to change sign.
- **Effect of Coulomb interaction**: The Coulomb interaction will break the degeneracy of all occupied edge Landau levels, but will not break the degeneracy of unoccupied and adjacent occupied edge Landau levels.
- **Role of the magnetic field**: The existence of an external magnetic field increases the available density of states, making the Coulomb drag effect two to three orders of magnitude larger than without a magnetic field.
### Conclusions
This study reveals the important influence of edge states on the Coulomb drag effect in narrow quantum Hall strips and explains that the change in the sign of the drag current is caused by near - edge inter - layer transitions, rather than by thermal gradients or electron - hole coupling. This phenomenon can be verified by measuring the voltage difference in an open - circuit configuration.