Abstract:A derivation of a tight-binding model from Schrödinger formalism for various topologies of position-based semiconductor qubits is presented in the case of static and time-dependent electric fields. The simplistic tight-binding model enables the description of single-electron devices at a large integration scale. The case of two electrostatically Wannier qubits (also known as position-based qubits) in a Schrödinger model is presented with omission of spin degrees of freedom. The concept of programmable quantum matter can be implemented in the chain of coupled semiconductor quantum dots. Highly integrated and developed cryogenic CMOS nanostructures can be mapped to coupled quantum dots, the connectivity of which can be controlled by a voltage applied across the transistor gates as well as using an external magnetic field. Using the anti-correlation principle arising from the Coulomb repulsion interaction between electrons, one can implement classical and quantum inverters (Classical/Quantum Swap Gate) and many other logical gates. The anti-correlation will be weakened due to the fact that the quantumness of the physical process brings about the coexistence of correlation and anti-correlation at the same time. One of the central results presented in this work relies on the appearance of dissipation-like processes and effective potential renormalization building effective barriers in both semiconductors and in superconductors between not bended nanowire regions both in classical and in quantum regimes. The presence of non-straight wire regions is also expressed by the geometrical dissipative quantum Aharonov–Bohm effect in superconductors/semiconductors when one obtains a complex value vector potential-like field. The existence of a Coulomb interaction provides a base for the physical description of an electrostatic Q-Swap gate with any topology using open-loop nanowires, with programmable functionality. We observe strong localization of the wavepacket due to nanowire bending. Therefore, it is not always necessary to build a barrier between two nanowires to obtain two quantum dot systems. On the other hand, the results can be mapped to the problem of an electron in curved space, so they can be expressed with a programmable position-dependent metric embedded in Schrödinger's equation. The semiconductor quantum dot system is capable of mimicking curved space, providing a bridge between fundamental and applied science in the implementation of single-electron devices.

Coulomb Drag in Topological Wires Separated by an Air Gap

Nonreciprocal Coulomb Drag between Quantum Wires in the quasi-1D regime

Fringing Field Effects in Semiconductor Nanowire Double Heterostructures

Coulomb drag between ballistic quantum wires

Tunable contributions from rectification and momentum transfer to 1D Coulomb Drag

Quasi-1D Coulomb drag in the nonlinear regime

Negative Electron-electron Drag Between Narrow Quantum Hall Channels

Hall Coulomb drag induced by electron-electron skew scattering

Fluctuation-driven Coulomb drag in interacting quantum dot systems

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Frictional Magneto-Coulomb Drag in Graphene Double-Layer Heterostructures

Quantum Coulomb drag mediated by cotunneling of fluxons and Cooper pairs

Topology-Driven Coulomb Drag in van der Waals Heterostructure with Broken Inversion Symmetry

Signature of Quantum Interference Effect in Inter-Layer Coulomb Drag in Graphene-Based Electronic Double-Layer Systems

Buried Dirac points in Quantum Spin Hall Insulators: Implications for edge transport and Majorana Kramer Pairs

Coulomb thermoelectric drag in four-terminal mesoscopic quantum transport

Interaction effects in superconductor/quantum spin Hall devices: universal transport signatures and fractional Coulomb blockade

Josephson–Coulomb drag effect between graphene and a LaAlO 3 /SrTiO 3 superconductor

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Observation of Coulomb Gap in the Quantum Spin Hall Candidate Single-Layer 1T '-Wte2

Electrostatically Interacting Wannier Qubits in Curved Space