Abstract:Titanium nitride (TiN) is widely used in electrode materials in fast charging/discharging supercapacitors (SCs) due to its outstanding conductivity. However, the low capacitance of the TiN electrode limits its further application in the SCs. Therefore, the reasonable design of the TiN electrode with high electrochemical and mechanical properties is still a challenge. In this paper, the silicon nanowires/titanium nitride electrode (Si NWs/TiN) is prepared by depositing TiN onto the etched Si nanowires by direct current magnetron sputtering. The Si NWs are prepared by etching silicon in 4.8 M HF/0.02 M AgNO3 aqueous solution for different times (5 min, 15 min, 30 min, 60 min). The mechanism of the effect of etched silicon substrate morphology on the electrochemical performance of Si NWs/TiN electrode was studied. As the etching time increases, the differences of the TiN surface structure, lattice defects and surface chemical composition will change the capacitance performance and charge storage mechanism of the Si NWs/TiN electrode. The prepared Si30 NWs/TiN electrode exhibits an outstanding specific capacitance as high as 113.55 F g−1 at a scan rate of 5 mV s−1 with 0.5 M H2SO4 solution as electrolyte. The specific capacitance of the Si30 NWs/TiN electrode is as high as 7.5 times that of the electrode without etching at 100 mV s−1. The Si30 NWs/TiN electrode has an excellent cyclic stability performance, which the electrode has a decay rate of 12.4% after 2000 cycles. This indicates that the electrode has reliable stability. The electrode of the supercapacitor prepared by this method can open up a new way to expand the specific surface area of other transition metal nitride.

Study on capacitance properties of the sputtered carbon doped titanium nitride electrode material for supercapacitor

Sputtered titanium nitride films on nanowires Si substrate as pseudocapacitive electrode for supercapacitors

Magnetron Sputtered TiN Thin Films Toward Enhanced Performance Supercapacitor Electrodes

Nitrogen and Sulfur Co-Doped 2D Titanium Carbides for Enhanced Electrochemical Performance

Sputtered titanium nitride films as pseudocapacitive electrode for on chip micro-supercapacitors

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Boosting Supercapacitor Performance of TiO2 Nanobelts by Efficient Nitrogen Doping

Electrochemical Capacitance of Titanium Nitride Modified Lithium Titanate Nanotube Array

Synthesis of Carbon Modified TiO2 Nanotubes Composite Films by Gas Thermal Penetration As Symmetrical and Binder-Free Electrochemical Supercapacitor

Synthesis and performance of TiN film electrode for supercapacitor by a facile chemical solution deposition method

Fabrication of NiCo2O4 deposited self-doped TiO2 nanotubes as binder-free supercapacitor electrode

High supercapacitance performance of nitrogen-doped Ti3C2T prepared by molten salt thermal treatment

High supercapacitance performance of nitrogen-doped Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> prepared by molten salt thermal treatment

Nitrogen Doped Intercalation TiO 2 /TiN/Ti 3 C 2 T x Nanocomposite Electrodes with Enhanced Pseudocapacitance.

Multidimensional Carbon Template Preparation of 3D Multilayered TiC Nanoflakes for High Performance Symmetric Supercapacitor

Improved Pseudocapacitances of Supercapacitors Based on Electrodes of Nitrogen-Doped Ti3C2Tx Nanosheets with In-Situ Growth of Carbon Nanotubes

Porous Carbon Anchored Titanium Carbonitride for High-Performance Supercapacitor

Sputtered chromium nitride films with finely tuned intra- and intercolumnar porosities as pseudocapacitive electrode for supercapacitors

Titanium carbide derived nanoporous carbon for supercapacitor applications

Nitrogen Doped Intercalation TiO<sub>2</sub>/TiN/Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> Nanocomposite Electrodes with Enhanced Pseudocapacitance

RETRACTED: Nitrogen Doped Intercalation TiO2/TiN/Ti3C2Tx Nanocomposite Electrodes with Enhanced Pseudocapacitance