Chaos in resonant-tunneling superlattices

O.M. Bulashenko,L.L. Bonilla
DOI: https://doi.org/10.1103/PhysRevB.52.7849
1995-06-08
Abstract:Spatio-temporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.
Condensed Matter,Chaotic Dynamics
What problem does this paper attempt to address?
This paper aims to explore the spatiotemporal chaos phenomena that may occur in semiconductor superlattices (SLs) under specific conditions. Specifically, the research object is n - type - doped semiconductor superlattices, and their main charge - transport mechanism is sequential resonant tunneling. The paper points out that under DC voltage bias, time - dependent oscillations of current have been observed in these superlattices, and these oscillations are caused by the movement and cycling of electric - field domain walls. Further, by applying an appropriate external microwave signal to force this natural oscillation, chaos phenomena can occur, that is, the system loses spatial coherence. ### Core problems solved in the paper: 1. **Predicting and explaining chaotic behavior**: The paper predicts that in n - type - doped semiconductor superlattices, when the main charge - transport mechanism is sequential resonant tunneling, spatiotemporal chaos phenomena can be generated by applying appropriate DC and AC voltage biases. 2. **Understanding the mechanism of chaos generation**: The paper analyzes in detail the mechanism of chaos generation, especially how the dynamics of electric - field domain walls become complicated under the action of external microwave signals, causing the system to lose spatial coherence. 3. **Possibility of experimental verification**: The paper proposes that these predictions should be experimentally verifiable with existing n - type - doped GaAs/AlAs samples, which usually form n+ - n - n+ diode structures. ### Main research methods and results: - **Theoretical model**: The paper establishes a set of mean - field models for describing the dynamics of weakly - coupled multi - quantum - well superlattices, including Poisson's equation, Ampere's law, and voltage - bias conditions. - **Numerical simulation**: By numerically solving these equations, the authors find that under appropriate DC and AC voltage biases, the system can exhibit a period - doubling sequence and finally enter the chaotic region. - **Chaotic characteristics**: The paper confirms the existence of the chaotic region by plotting the current - voltage relationship graph (bifurcation graph) and calculating the maximum Lyapunov exponent. In addition, the characteristics of the chaotic attractor are also shown by plotting the electric - field values in different quantum wells. ### Conclusion: The paper predicts and explains that spatiotemporal chaos phenomena may occur in n - type - doped semiconductor superlattices under specific conditions. This prediction not only helps to deeply understand the dynamic behaviors of these systems but also provides a theoretical basis for future experimental research.