Abstract:White-light OLED devices play an important application in information display fields. Optical interference of the microcavity structure has an important effect on device performances. According to the design of the band structure, ITO/MoO3 composite films were used as the anode, and Mg : Ag (1%) composite films were prepared by coevaporation as the translucent cathode; CuPc was used as the hole injection layer and anode passivation layer, NPB as the hole transmission layer and yellow light main material, rubrene as yellow dopant material, ADN as blue light main material, DSA-Ph as blue dopant material, and TPBi and Alq3 as the electron transport layers. We realized the change of the microcavity structure by adjusting the thickness of each organic functional layer film and simulated and calculated the optimized thickness of each organic film layer and influence on OLED device performances using the SimOLED software system. The optimized OLED microdisplay structure is Si(CMOS)/ITO (35 nm)/MoO3 (2 nm)/CuPc (5 nm)/2-TNATA (20 nm)/NPB (10 nm)/NPB : rubrene (1.5%)ADN : DSA-Ph (5%) (25 nm)/TPBi (15 nm)/Alq3 (1.2 nm)/Mg (13 nm) : Ag (1%). The optimized OLED microdisplay was prepared by the vacuum coating system, and the photoelectric performances of the OLED device were characterized by a spectral testing system consisting of the Photo Research PR655 spectrometer and Keithley 2400 program-controlled power supply. The effect of the microcavity structure on OLED device performances was studied. The results show that the variation of the film thickness of each organic functional layer has an important effect on the performances of OLED microdisplay, such as brightness and color coordinate, and the OLED microdisplay reaches a higher brightness of 3342 cd/m2 under the normal working voltage at 5.0 V after the structure is optimized, with CIE coordinate (0.28, 0.37), which is closer to the energy point of standard white light.

The Simulation of OLED Current Detection Based on Scanning SQUID Microscope

High-Density Integration of Ultrabright OLEDs on a Miniaturized Needle-Shaped CMOS Backplane

Study of Pixel and Driving Circuits of OLED on Silicon

P‐39: A 1.05% Sensing Error Current Comparator for AMOLED Displays with External Compensation

The Near-field Radiation Pattern of an OLED Panel and Its Application in Detection

64‐5: Virtual ESD Failure Detection Methodology for Oxide TFT Based OLED Panels

High-speed, Whole-Column Fluorescence Imaging Detection for Isoelectric Focusing on a Microchip Using an Organic Light Emitting Diode As Light Source.

P-37: A High Accuracy Current Comparison Scheme for External Compensation Circuit of AMOLED Displays

Improved Modeling of Material Deposition during OLED Manufacturing Using Direct Simulation Monte Carlo Method on GPU Architecture

Influence of Driving Current on Photometric Performances of a White Light OLED

P-44: A Current Source Free Separate Frame Compensated Voltage-Programmed Active Matrix Organic Light Emitting Diode Pixel Circuit

A microfluidic device using a green organic light emitting diode as an integrated excitation source.

14‐3: OLEDoS Microdisplay with OLED Threshold Voltage Detection and Fast‐Progressive Compensation

A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation.

Using Magneto-Electroluminescence As a Fingerprint to Identify the Carrier-to-photon Conversion Process in Dye-Doped OLEDs

Sub-micron spin-based magnetic field imaging with an organic light emitting diode

Design Simulation and Preparation of White OLED Microdisplay Based on Microcavity Structure Optimization

OLED Electrical Equivalent Device for Driver Topology Design

Detection of Electrical Circuit in a Thin-Film-Transistor Liquid-Crystal Display Using a Hybrid Optoelectronic Apparatus: An Array Tester and Automatic Optical Inspection

A Mixed-Signal Display Driver Chip for 96×64 Color OLED

Tricolor Microcavity Oleds Based On P-Nc-Si:H Films As The Complex Anodes