Abstract:In this paper we present a thorough first-principles based density functional theory study of the structural stability, electronic, magnetic, and optical properties of pristine and doped gallium phosphide (GaP) monolayers. The pristine GaP monolayer is found to have a periodically buckled structure, with an indirect band gap of 2.15 eV. The doping by X (B, Al, In, C, Si, Ge, Sn, Zn, Cd) at the Ga site, and Y (N, As, Sb, O, S, Se, Te, Zn, Cd) at the P site is considered, and an indirect to direct transition is observed after doping by In at the Ga site. For several cases, significant changes in the band gap are seen after doping, while system becomes metallic when O is substituted at the P site. The spin-polarized band structures are calculated for the monolayers with doping-induced magnetism, and we find that for some cases a direct band gap appears for one of the spin orientations. For such cases, we investigate the intriguing possibility of spin-dependent optical properties. Furthermore for several cases, the band gap is very small for one of the spin orientations, suggesting the possibility of engineering half metallicity by doping. For the layers with direct band gaps, the calculated optical absorption spectra are found to span a wide energy range in the visible and ultraviolet regions. The calculated formation energies of both the pristine and doped structures are quite small, indicating that the laboratory realization of such structures is quite feasible. On the whole, our results suggest that the doped GaP monolayer is a material with potentially a wide range of applications in nanoelectronics, spintronics, optoelectronics, solar cells, etc.

First-principles study of indium nitride monolayers doped with alkaline earth metals

Density Functional Study on the Ferromagnetism of Alkaline Earth Doped Inn

Ab Initio Study on Electronic Structure and Magnetism of AlN and InSe Monolayer

First-principles study of the effect of alkaline earth metal doping on the magnetic and photocatalytic properties of monolayer AlN: V N -H i

The First-Principle Study of Ga Doping in InN Materials

First-principles study on electronic and magnetic properties of Cu,Ag,and Au-doped AIN

First-Principles Study of the P-Type Doped Inn

The First-Principles Study on the Doping Effect of Re in Ni3Al

The Effects of Nonmetal Dopants on the Electronic, Optical and Chemical Performances of Monolayer G–c3n4 by First-Principles Study

Magnetic properties in a IIIA-nitride monolayer doped with Ag: A density functional theory investigation

Engineering the electronic, magnetic, and optical properties of GaP monolayer by substitutional doping: a first-principles study

A First-Principles Study on Alkaline Earth Metal Atom Substituted Monolayer Boron Nitride (Bn)

First-Principles Study of Electronic Structure and Optical Properties of La-Doped AlN

First-principles studies of strain-tunable InN monolayer: Applications for switching and optoelectronic devices

FIRST-PRINCIPLES STUDY OF STRUCTURES AND ELECTRONIC PROPERTIES FOR NITRIDE-DOPED ALUMINUM CLUSTERS

First-principles study of Sr adsorption on InN (0001)

First‐principles Study of the Al‐N co‐doped Zincblende ZnO

Effect of Alkaline Earth Metals Doping on the Electronic Structure, Magnetic and Optical Properties of g-SiC Monolayer System by First Principles Calculation

First-Principles Study Of Transition Metal Impurities In Si

First-principles Study on Doping of Tetragonal ZnSe Monolayers

Ab initio study on electronic structure and magnetic properties of AlN and BP monolayers with Ti doping