A 102.1-dB SNDR oversampling merge-mismatch-error-shaping SAR ADC in 180 nm CMOS

Jinghong Xiao,Jiajun Song,Yuhua Liang
DOI: https://doi.org/10.1016/j.mejo.2023.106053
IF: 1.992
2023-12-10
Microelectronics Journal
Abstract:In this paper, we propose a merge-mismatch-error-shaping (M-MES) noise shaping SAR ADC as a solution to address the limitation of SNDR caused by the non-linearity resulting from DAC mismatch. The proposed M-MES technique is based on MES with the introduction of capacitive merging to mitigate the degradation of dynamic range (DR) in ADCs. In addition, to meet the high signal-to-noise ratio (SNR) and low power requirements of the ADC, cascaded integrator feed-forward (CIFF) noise shaping ADC in this paper is a first-order filter based on a closed-loop amplifier. The proposed ADC was simulated and designed in a 180-nm CMOS process, which consumes 449 μW of power when operating at 1 MS/s sampling frequency. According to the post-simulation results, under a 3.3-V supply and at an oversampling ratio (OSR) of 500, the proposed ADC achieves Schreier FoM S of 168.5 dB with 102.1 dB signal to noise and distortion ratio (SNDR) and 102.2 dB spurious free dynamic range (SFDR).
engineering, electrical & electronic,nanoscience & nanotechnology
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