Mass-limited Sn target irradiated by dual laser pulses for an extreme ultraviolet lithography source.

Y. Tao,M. Tillack,S. S. Harilal,K. Sequoia,R. Burdt,F. Najmabadi
DOI: https://doi.org/10.1364/OL.32.001338
IF: 3.6
2007-05-15
Optics Letters
Abstract:A thin Sn film was investigated as a mass-limited target for an extreme ultraviolet (EUV) lithography source. It was found that those energetic ions that are intrinsic with the mass-limited Sn target could be efficiently mitigated by introducing a low-energy prepulse. High in-band conversion efficiency from a laser to 13.5 nm EUV light could be obtained using an Sn film with a thickness down to 30 nm when irradiated by dual laser pulses. It was shown that the combination of dual pulse and inert Ar gas could fully mitigate ions with a low ambient pressure nearly without the penalty of the absorption of the EUV light.
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