The metal-insulator transition in semiconductors

Fedor V. Prigara,Fedor V.Prigara

DOI: https://doi.org/10.48550/arXiv.0902.4350

2009-02-25

Statistical Mechanics

Abstract:The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.

What problem does this paper attempt to address?

Energy pseudogaps and structural transitions in metals

Fedor V. Prigara

DOI: https://doi.org/10.48550/arXiv.1106.5859

2011-06-29

Superconductivity

Abstract:It is shown that a structural transition in a metal is associated with the opening of the energy pseudogap in the electronic spectrum in a low-temperature phase below the transition temperature. A relation between the magnitude of the energy pseudogap in the d-band of transition metals (at zero temperature) and the structural transition temperature is similar to a relation between the magnitude of the superconducting gap and the superconducting transition temperature in low-temperature and high-temperature superconductors. A relation between the magnitude of the energy pseudogap and the structural transition temperature in sp-metals is similar to a relation between the bandgap width (at zero temperature) and the metal-insulator transition temperature in semiconductors.
Metal-insulator transition in a strongly-correlated two-dimensional electron system

A.A. Shashkin,S.V. Kravchenko

DOI: https://doi.org/10.48550/arXiv.1611.05645

2016-11-17

Abstract:Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility, effective mass, and thermopower in low-disordered silicon MOSFETs.

Strongly Correlated Electrons
Towards a Comprehensive Theory of Metal-Insulator Transitions in Doped Semiconductors

S. Kettemann

DOI: https://doi.org/10.1016/j.aop.2023.169306

2023-10-04

Abstract:A review is given on the theory of metal-insulator transitions (MIT) in doped semiconductors. We focus in particular on reviewing theories of their anomalous magnetic properties, which emerge from the interplay of spin and charge correlations and disorder.Building on the review of these existing theories and experiments, we suggest that the finite temperature phase diagram can be structured into 1. a random quantum spin liquid phase at subcritical doping and low temperature, as described by the Bhatt-Lee theory of random spin clusters, mostly random singlets. 2. a critical non-Fermi-liquid fan, originating at the MIT, which is dominated by random Kondo singlets with a universal tail of the distribution of their binding energies. This is caused by multifractality and results in an anomalous power law divergence of the magnetic susceptibility with a universal power and 3. a supercritical, low temperature phase. Rare events caused by the random placement of dopants do not allow to define strict phase boundaries. Remaining open problems are reveiwed and outlined. Finally, the possibility of finite temperature delocalization transitions is reviewed, which arcaused by the correlation induced temperature dependence of the spin scattering rate from magnetic moments. This review article is devoted to the memory of Konstantin B. Efetov.

Disordered Systems and Neural Networks,Strongly Correlated Electrons
How well do we know the age and mass distributions of the star cluster system in the Large Magellanic Cloud?

Richard de Grijs,Peter Anders

DOI: https://doi.org/10.1111/j.1365-2966.2005.09856.x

2005-11-10

Abstract:[ABRIDGED] The LMC star cluster system offers the unique opportunity to independently check the accuracy of age and mass determinations based on a number of complementary techniques, including isochrone analysis. Using our sophisticated tool for star cluster analysis based on broad-band spectral energy distributions (SEDs), we reanalyse the Hunter et al. (2003) LMC cluster photometry. Our main aim is to set the tightest limits yet on the accuracy of ABSOLUTE age determinations based on broad-band SEDs, and therefore on the usefulness of such an approach. Our broad-band SED fits yield reliable ages, with statistical absolute uncertainties within Delta[log(Age/yr)] = 0.4 overall. The systematic differences we find with respect to previous age determinations are caused by conversions of the observational photometry to a different filter system. The LMC's cluster formation rate (CFR) has been roughly constant outside of the well-known age gap between ~3 and 13 Gyr, when the CFR was a factor of ~5 lower. We derive the characteristic cluster disruption time-scale, log(t_4^dis/yr) = 9.9 +- 0.1, where t_dis = t_4^dis (M_cl/10^4 Msun)^0.62. This long characteristic disruption time-scale implies that we are observing the INITIAL cluster mass function (CMF). We conclude that the youngest mass and luminosity-limited LMC cluster subsets show shallower slopes than the slope of alpha = -2 expected (at least below masses of a few x 10^3 Msun), which is contrary to dynamical expectations. This may imply that the initial CMF slope of the LMC cluster system as a whole is NOT well represented by a power-law, although we cannot disentangle the unbound from the bound clusters at the youngest ages.

Astrophysics
Charge gap and ferroelastic lattice distortion in high-temperature superconductors

Fedor V.Prigara

DOI: https://doi.org/10.48550/arXiv.0811.1131

2008-11-07

Superconductivity

Abstract:It is shown that a ferroelastic lattice distortion is associated with the superconducting transition both in low- and high-temperature superconductors. A low-temperature ferroelastic transition in crystalline solids produces also a maximum in the temperature dependence of their thermal conductivity. In layered tetragonal superconductors with a sufficiently high transition temperature, a ferroelastic distortion is improper and is caused by an out-of-plane charge ordering. The relation between the out-of-plane charge gap and the maximum superconducting transition temperature for these superconductors is obtained.
Recent developments in the field of the metal-insulator transition in two dimensions

Alexander A. Shashkin,Sergey V. Kravchenko

DOI: https://doi.org/10.3390/app9061169

2019-03-20

Abstract:We review the latest developments in the field of the metal-insulator transition in strongly-correlated two-dimensional electron systems. Particular attention is given to recent discoveries of a sliding quantum electron solid and interaction-induced spectrum flattening at the Fermi level in high-quality silicon-based structures.

Strongly Correlated Electrons,Mesoscale and Nanoscale Physics
Charge gap, lattice distortion, and ferroelastic fluctuations in high-temperature superconductors

Fedor V. Prigara,Fedor V.Prigara

DOI: https://doi.org/10.48550/arXiv.1001.4152

2010-01-23

Superconductivity

Abstract:It is shown that a ferroelastic lattice distortion is associated with the superconducting transition both in low- and high-temperature superconductors. In layered tetragonal superconductors with a sufficiently high transition temperature, a ferroelastic distortion is improper and is caused by an out-of-plane charge ordering. The relation between the out-of-plane charge gap and the maximum superconducting transition temperature for these superconductors is obtained. It is shown also that the specific heat jump at the superconducting transition temperature in pnictide and cuprate superconductors is produced by ferroelastic fluctuations just below the transition temperature. The amplitude of the corresponding lattice distortion is estimated.
Metal-insulator transition in 2D: a role of the upper Habbard band

V.I.Kozub,and N.V.Agrinskaya

DOI: https://doi.org/10.1103/PhysRevB.64.245103

2001-04-13

Abstract:To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of doubly-occupied states (upper Hubbard band). The metallic behavior of resistance is explained as result of activation of localized electrons to conductance band leading to a suppression of non-linear screening of the disorder potential. The magnetoresistance (MR) in the critical region is related to depopulation of double occupied localized states also leading to partial suppression of the nonlinear screening. The most informative data are related to nearly activated temperature dependence of MR in strongly insulating limit (which can be in particular reached from the metallic state in high enough fields). According to our model this behavior originates due to a lowering of a position of chemical potential in the upper Hubbard band due to Zeeman splitting. We compare the theoretical predictions to the existing experimental data and demonstrate that the model explains such features of the 2D MIT as scaling behavior in the critical region, saturation of MR and H/T scaling of MR in the insulating limit. The quantitative analysis of MR in strongly insulating limit based on the model suggested leads to the values of g-factors being in good agreement with known values for localized states in corresponding materials.

Disordered Systems and Neural Networks,Strongly Correlated Electrons
On the Cooling of Electrons in a Silicon Inversion Layer

O. Prus,M. Reznikov,U. Sivan,V. Pudalov

DOI: https://doi.org/10.1103/PhysRevLett.88.016801

2001-08-07

Abstract:The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in silicon. Unexpectedly, the extracted heat transfer rate to phonons at low temperatures depends cubically on electron temperature, suggesting that piezoelectric coupling (absent in bulk silicon) dominates over deformation potential. According to our findings, at 100 mK, electrons farther than 0.1 mm from the contacts are mostly cooled by phonons. Using long devices and low excitation voltage we measure electron resistivity down to 100 mK and find that some of the "metallic" curves, reported earlier, turn insulating below about 300 mK. This finding renders the definition of the claimed 2D metal-insulator transition questionable. Previous low temperature measurements in silicon devices are analyzed and thumb rules for evaluating their electron temperatures are provided.

Mesoscale and Nanoscale Physics
Metal-insulator transition in amorphous alloys

A. Mobius,C.J. Adkins

DOI: https://doi.org/10.48550/arXiv.cond-mat/0111017

2001-11-01

Abstract:We focus on the central problem of discriminating between metallic and insulating behaviour in amorphous alloys formed between a semiconductor and a metal. For this, the logarithmic temperature derivative of the conductivity, w = d ln sigma / d ln T, has proved over recent years to be very helpful in determining the critical value x_c of the metal content x for the metal-insulator transition (MIT). We show that, for various amorphous alloys, recent experimental results on w(T,x) are qualitatively inconsistent with the usual assumptions of continuity of the MIT at T = 0 and of sigma(T,x_c) being proportional to a power of T. These results suggest that w(T,x_c) tends to 0 as T -> 0, in which case the MIT should be discontinuous at T = 0 (but only there), in agreement with Mott's hypothesis of a finite minimum metallic conductivity.

Disordered Systems and Neural Networks,Materials Science
Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems

A. A. Shashkin

DOI: https://doi.org/10.1070/PU2005v048n02ABEH001944

2005-03-07

Abstract:Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the strongly enhanced spin susceptibility and effective mass in low-disordered silicon MOSFETs.

Strongly Correlated Electrons
Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

A. A. Shashkin,S. V. Kravchenko

DOI: https://doi.org/10.1016/j.aop.2021.168542

2021-04-30

Abstract:We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in ultra-clean SiGe quantum wells and to the evidence for a flat band at the Fermi level and a quantum electron solid.

Strongly Correlated Electrons
Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems

Y. Hanein,D. Shahar,J. Yoon,C.C. Li,D.C. Tsui,Hadas Shtrikman

DOI: https://doi.org/10.1103/PhysRevB.58.R7520

1998-07-18

Abstract:The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density.

Mesoscale and Nanoscale Physics
The metal-semiconductor transition in three-dimensional disordered systems-reanalysis of recent experiments for and against minimum metallic conductivity

A Mobius

DOI: https://doi.org/10.1088/0022-3719/18/24/011

1985-08-30

Abstract:Recently a series of experiments has been performed to investigate the transition from metallic to activated conduction, the so called metal-semiconductor transition. Most of these studies favour a continuous transition of sigma (0K). The author analyses presumptions and uncertainties in the interpretation of such experiments; why the use of an ansatz for sigma (T) may be misleading is discussed. Studies of amorphous Si1-xCrx show that there is a continuous phase transition from metallic to activated conduction at finite temperatures, whereas the metal-insulator transition at zero temperature is discontinuous. A phenomenological model for the behaviour of the conductivity near the metal-semiconductor transition in Si1-xCrx is given. By reinterpreting data from the literature this model is shown to be applicable to other amorphous semiconductors alloyed with transition metals, as well as to compensated and uncompensated heavily doped crystalline semiconductors, including Si:P, and, moreover, to granular metals. The metal-semiconductor transition should have the same nature for all these substances. The logical structure of the phenomenological model together with the results of tunnelling studies imply the hypothesis that the transition is related to the formation of a soft Coulomb gap. The 'width' of this gap should tend to zero as the transition is approached.
Damping effects and the metal-insulator transition in the two-dimensional electron gas

V.A.Khodel,M.V.Zverev,J.W.Clark

DOI: https://doi.org/10.1134/1.1944070

2005-02-27

Abstract:The damping of single-particle degrees of freedom in strongly correlated two-dimensional Fermi systems is analyzed. Suppression of the scattering amplitude due to the damping effects is shown to play a key role in preserving the validity of the Landau-Migdal quasiparticle picture in a region of a phase transition, associated with the divergence of the quasiparticle effective mass. The results of the analysis are applied to elucidate the behavior of the conductivity $\sigma(T)$ of the two-dimensional dilute electron gas in the density region where it undergoes a metal-insulator transition.

Strongly Correlated Electrons
Disorder-Driven Metal-Insulator Transitions in Deformable Lattices

Domenico Di Sante,Simone Fratini,Vladimir Dobrosavljević,Sergio Ciuchi

DOI: https://doi.org/10.1103/physrevlett.118.036602

IF: 8.6

2017-01-20

Physical Review Letters

Abstract:We show that, in the presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition is fundamentally changed with respect to the noninteracting (Anderson) scenario. For strong disorder, even a modest electron-phonon interaction is found to dramatically renormalize the random potential, opening a mobility gap at the Fermi energy. This process, which reflects disorder-enhanced polaron formation, is here given a microscopic basis by treating the lattice deformations and Anderson localization effects on the same footing. We identify an intermediate "bad insulator" transport regime which displays resistivity values exceeding the Mott-Ioffe-Regel limit and with a negative temperature coefficient, as often observed in strongly disordered metals. Our calculations reveal that this behavior originates from significant temperature-induced rearrangements of electronic states due to enhanced interaction effects close to the disorder-driven metal-insulator transition.

physics, multidisciplinary
Temperature dependence of the dielectric-metal phase transition in a two-dimensional system of charge-transfer excitons

kadi zhu,takayoshi kobayashi

DOI: https://doi.org/10.1016/0375-9601(95)00236-V

IF: 2.707

1995-01-01

Physics Letters A

Abstract:The dielectric-metal phase transition at a finite temperature in a two-dimensional system of charge-transfer excitons, which was proposed recently by Agranovich and Ilinski [Phys. Lett. A 191 (1994) 309], has been investigated theoretically using pseudospin operators for the model Hamiltonian and Weiss molecular field approximation. The numerical results show that the phase transition region broadens at low temperatures, but disappears at high temperatures.
Ferroelastic fluctuations in high-temperature superconductors

Fedor V.Prigara

DOI: https://doi.org/10.48550/arXiv.0909.5569

2009-09-30

Abstract:It is shown that the specific heat jump at the superconducting transition temperature in pnictide and cuprate superconductors is produced by ferroelastic fluctuations just below the transition temperature. The amplitude of the corresponding lattice distortion is estimated. It is shown that a contribution from ferroelastic fluctuations to the specific heat jump is also present in low-temperature superconductors.

Superconductivity
Wigner Glass, Spin-liquids, and the Metal-Insulator Transition

Sudip Chakravarty,Steven Kivelson,Chetan Nayak,Klaus Voelker

DOI: https://doi.org/10.1080/13642819908214845

1998-08-22

Abstract:Recent experiments on the two dimensional electron gas in various semiconductor devices have revealed an unexpected metal-insulator transition and have challenged the previously held assumption that there is no such transition in two dimensions. While the experiments are still at the stage of rapid development, it is becoming evident that they cannot be understood from the conventional perspective of weak interactions. In the present paper, we propose the following. (1) The low-density insulating state is the Wigner Glass, a phase with quasi-long-range translational order and competing ferromagnetic and antiferromagnetic spin-exchange interactions. (2) The transition is the melting of this Wigner Glass, disorder being the agent allowing the transition to be second order. (3) Within the Wigner Glass phase, there are at least two, distinct magnetic ground-states, a ferromagnetic state at very low electron density and a spin-liquid state with a spin pseudo-gap at higher densities. (4) The metallic side of the transition is a non-Fermi liquid. These conclusions are encapsulated in Figure 1 which presents the proposed phase diagram as a function of disorder strength and density; we also suggest experimental signatures of the various phases and transitions.

Strongly Correlated Electrons,Disordered Systems and Neural Networks
Metal-insulator transition in films of doped semiconductor nanocrystals

Ting Chen,K. V. Reich,Nicolaas J. Kramer,Han Fu,Uwe R. Kortshagen,B. I. Shklovskii

DOI: https://doi.org/10.1038/nmat4486

2016-06-15

Abstract:To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration $n_c$ for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted $n_c$, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

Mesoscale and Nanoscale Physics,Materials Science

The metal-insulator transition in semiconductors

Energy pseudogaps and structural transitions in metals

Metal-insulator transition in a strongly-correlated two-dimensional electron system

Towards a Comprehensive Theory of Metal-Insulator Transitions in Doped Semiconductors

How well do we know the age and mass distributions of the star cluster system in the Large Magellanic Cloud?

Charge gap and ferroelastic lattice distortion in high-temperature superconductors

Recent developments in the field of the metal-insulator transition in two dimensions

Charge gap, lattice distortion, and ferroelastic fluctuations in high-temperature superconductors

Metal-insulator transition in 2D: a role of the upper Habbard band

On the Cooling of Electrons in a Silicon Inversion Layer

Metal-insulator transition in amorphous alloys

Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems

Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems

The metal-semiconductor transition in three-dimensional disordered systems-reanalysis of recent experiments for and against minimum metallic conductivity

Damping effects and the metal-insulator transition in the two-dimensional electron gas

Disorder-Driven Metal-Insulator Transitions in Deformable Lattices

Temperature dependence of the dielectric-metal phase transition in a two-dimensional system of charge-transfer excitons

Ferroelastic fluctuations in high-temperature superconductors

Wigner Glass, Spin-liquids, and the Metal-Insulator Transition

Metal-insulator transition in films of doped semiconductor nanocrystals