First Principle Computation of Pure and (Sc, P, Bi)-Doped AlSb for Optoelectronic and Photonic Applications

Shafqat Nabi,Abdul Waheed Anwar,Zafar Wazir,Muhammad Aslam,Najam Ul Haq,Muhammad Moin,Muhammad Tayyab,Anwar Ali,Muhammad Usman Ghani,Kashif Nabi,Nabi, Shafqat
DOI: https://doi.org/10.1007/s10904-023-02922-3
IF: 3.518
2023-12-01
Journal of Inorganic and Organometallic Polymers and Materials
Abstract:The structural electrical and optical properties of AlXSb (x = Sc, P, Bi) are studied using density functional theory and the exchange—correlation approximation. We use the generalized gradient approximation (GGA-PBE) to compute optoelectronic characteristics of pure and (Sc, P, Bi)-doped materials. The structural features such as bulk moduli, pressure derivatives, and lattice parameters all agree well with the experiment's findings. Electronic state densities and band structure properties are determined using the GGA-PBE flavor. The calculations demonstrate that undoped AlSb is optically inactive because of the indirect (Γ-L) bandgap. When we doped appropriate materials such as Sc, P and B in pure AlSb, the bandgap shrinks and switches from an indirect bandgap to a direct bandgap (Γ-Γ), enabling the material to start functioning optically. The resultant material promised to be applicable for optoelectronic applications, such as photodetectors, light-emitting diodes, and high-power electronic devices.
polymer science
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