Dispersive localized Ta-rich area and Ta substitution approach ultralow lattice thermal conductivity in CrSi 2

Xingkai Duan,Wei-Di Liu,Yuezhen Jiang,Xiaoli Ke,Konggang Hu,Xiao-Lei Shi,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.scriptamat.2022.115173

IF: 6.302

2022-11-19

Scripta Materialia

Abstract:CrSi 2 -based thermoelectric materials with high earth abundance, low material cost, and high stability, have attracted increasing research interests. However, their performance is till off the practical application level because of high lattice thermal conductivity. Here, we discovered that the observed dispersive localized Ta-rich area and Ta substitution in the CrSi 2 matrix induce significant lattice distortions and strain fields, leading to strengthened phonon scattering and in turn an ultralow lattice thermal conductivity of ∼0.87 W m −1 K −1 at ∼750 K in the Cr 0.94 Ta 0.06 Si 2 . Together with a power factor of ∼7 μW cm −1 K −2 at ∼750 K, a relatively high figure of merit of 0.28 at ∼750 K is observed in the Cr 0.94 Ta 0.06 Si 2 . This figure of merit is comparable to other state-of-the-art CrSi 2 -based thermoelectric materials. Our understanding on the dispersive localized Ta-rich area and Ta substitution can be used to guide the development of wide thermoelectric materials.

materials science, multidisciplinary,nanoscience & nanotechnology,metallurgy & metallurgical engineering