Abstract:High-performance gas sensors have been developed to meet the demand for the trace detection of NO2 given the adverse effects of NO2 posed to the environment and human health. Two-dimensional (2D) metal oxides are considered an emerging class of NO2-sensitive materials. However, their controllable synthesis and poor recovery are two major obstacles to practical NO2 sensing applications. In this study, we prepare tailorable 2D p-type SnO with thicknesses ranging between 1.5 and 3 nm through the precise control of self-limiting oxidation over the liquid Sn surface. At the 0.05 % oxygen concentration, 2D SnO exhibits a lateral dimension as large as 100 μm with a thickness of 1.5 nm, which can be facilely integrated into the field-effect transistor (FET) platform to form 2D devices. The NO2 sensing performance of 2D SnO at room temperature is investigated under the excitation of a broad range of UV-Visible light. The optimum response magnitude to 10 ppm NO2 is achieved at ~205% at 450 nm excitation with excellent reversibility. In addition, the selectivity to NO2 is also explored, indicating an up to one order enhancement over those of CO2, NH3, H2, H2S, CO, and CH4. We ascribe such an improved performance to the optimum band alignment between 1.5 nm-thick SnO and NO2 gas molecules. This work provides a feasible approach to preparing 2D metal oxides and demonstrates that they have great potential for fully reversible gas sensing at room temperature.

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