Abstract:This article proposes a surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating. This structure contains a SiO2 film, an Ag film and a HfO2 film sequentially coated on the rectangularly-patterned p-GaN layer. The Ag film is used to enhance the internal quantum efficiency. The HfO2 cover-layer symmetrizes the distribution of refractive index besides the Ag film to improve the light extraction efficiency and surface-plasmon (SP) extraction efficiency. The inserted SiO2 layer is utilized to further improve the SP extraction efficiency. The properties of SP modes and Purcell effect in this structure are investigated. The photoluminescence experiments demonstrate that its peak intensity of top-emission is about 2.5 times greater than that from the reference structure covered by a single-layer Ag film on the rectangularly-patterned p-GaN layer.

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Whole Article Corrigendum: “Surface-Plasmon-enhanced GaN-LED Based on the Multilayered Rectangular Nano-Grating” [optics Communications 322 (2014) 66-72]

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