Low Damage Scalable Pulsed Laser Deposition of SnO2 for p–i–n Perovskite Solar Cells

Wiria Soltanpoor,Andrea E. A. Bracesco,Nathan Rodkey,Mariadriana Creatore,Monica Morales-Masis,Andrea Bracesco
DOI: https://doi.org/10.1002/solr.202300616
IF: 9.1726
2023-10-07
Solar RRL
Abstract:Pulsed Laser Deposition (PLD) has already been adopted as a low damage deposition technique of transparent conducting oxides (TCOs) on top of sensitive organic charge transport layers in optoelectronic devices. Here we demonstrate SnO2 deposition as buffer layer in p–i–n perovskite solar cells (PSCs) via wafer‐scale (4‐inch) PLD at room temperature. The PLD SnO2 properties, its interface with perovskite/C60 and device performance are compared to atomic layer deposited (ALD) SnO2, i.e. state of the art buffer layer in perovskite‐based single junction and tandem photovoltaics. The PLD SnO2 based solar cells exhibited on par efficiencies (17.8%) with that of SnO2 fabricated using ALD. The solvent‐free, room temperature processing and wafer scale approach of PLD, opens up possibilities for buffer layer formation with increased deposition rates while mitigating potential thermal or physical damage to the top organic layers. This is a promising outlook for fully physical vapor processed halide PSCs and optoelectronic devices requiring low thermal budget. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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