Abstract:By manipulating the device carrier dynamics by tuning the energy levels and defects of interface layers, a bias‐switchable dual‐mode organic photodiode (OPD) is achieved. This OPD can operate in photovoltaic mode (EQEmax ≈ 80%) and photomultiplication‐mode (EQEmax ≈ 3000%) under reverse and forward biases, respectively, and shows great potential for adaptive detection of faint and strong light. Bias‐switchable dual‐mode organic photodiodes (OPDs) that integrate photovoltaic and photomultiplication modes are recently developed and shown prospects in complex light‐intensity applications. Yet, the device physics that focuses on carrier dynamics is still a challenge and needs to be further explored. Herein, dual‐mode OPDs are developed through interface layer manipulation, that is, introducing cathode interface layers (typically, ZnxO:D149) with deep energy levels and abundant bulk defects and an anode interface layer of thermally‐evaporated ZnO (e‐ZnO) with a wide bandgap. Under reverse bias, ZnxO:D149 forms a barrier wall to effectively block external holes and maintain the photovoltaic mode of the OPDs. Under forward bias, the capturing effect of ZnxO:D149 and blocking effect of e‐ZnO help to reduce the dark current; when under illumination, defect traps capture photo‐generated holes, eliminating the barrier traps and promoting unobstructed injection of external carriers to achieve photomultiplication effect. The typical device delivers high specific detectivity (>1012 Jones) and fast response (<40 μs), and exhibits disparate external quantum efficiency in two operating modes, showing promise for simultaneously detecting faint and strong light. This general strategy for preparing dual‐mode OPDs is compatible with CMOS processing technology and meets the miniaturization and integration requirements of next‐generation detection systems.

Transition of Working Modes in Organic Photodetectors: Tuning the Electrode Work Function for Photodiode‐to‐Photoconductor Switching

Photovoltaic Mode Ultraviolet Organic Photodetectors with High On/Off Ratio and Fast Response

Bias‐Switchable Dual‐Mode Organic Photodiodes Enabled by Manipulation of Interface Layers

The Light Wavelength, Intensity, and Biasing Voltage Dependency of the Dark and Photocurrent Densities of a Solution-Processed P3HT:PC61BM Photodetector for Sensing Applications

Highly Sensitive Organic Photodetectors with Tunable Spectral Response under Bi‐Directional Bias

Bias‐switchable Dual‐Mode Organic Photodetector with High Operational Stability Using Self‐trapped Cs3Cu2I5 Interfacial layer

Organic photodiodes with bias-switchable photomultiplication and photovoltaic modes

Dual-Band Photomultiplication-Type Organic Photodetectors with Ultrahigh Signal-to-Noise Ratios

The Functional Materials and Structure of Organic Photodiodes

Tunable Light Response Modulated by the Organic Interface Charge Transfer Effect

Multifunctional Photodetector with Tunable Response Bandwidth and Polarization Sensitivity

Efficient Charge Transfer in Narrowband Organic Photodiodes Based on Self-Assembled Heterojunction for Spectrally Selective Photodetection and Imaging

All‐Organic Self‐Powered Photodetector with Ultra‐Flexible Dual‐Polarity Output for Bio‐Signal Detection

Challenges and recent advances in photodiodes-based organic photodetectors

High-responsivity, High-detectivity Photomultiplication Organic Photodetector Realized by a Metal-Insulator-Semiconductor Tunneling Junction

Recent Progress in Organic Photodetectors and their Applications

Enabling a High-Sensitivity and Fast-Response Organic Phototransistor Based on an “embedded” Heterojunction Toward Broadband High-Speed Imaging

Recent Advances in Organic Photodetectors

A Novel Hybrid‐Layered Organic Phototransistor Enables Efficient Intermolecular Charge Transfer and Carrier Transport for Ultrasensitive Photodetection

PCN‐134(Fe)‐Gated Organic Photoelectrochemical Transistor with Unique Dual‐Directional Signaling

Modulating Dynamic Photoresponse Behavior of Organic Phototransistors Through Morphology Control