Abstract:Compared with traditional semiconductor materials, graphene has unparalleled advantages on mobility, thermal conductivity, mechanical strength and so on. Thus it was considered as a promising candidate material for the future semiconductor industry. However, since its band structure is gapless, band gap engineering has become a significant task for scientists. My dissertation focuses on chemical and physical modification methods that could pave the way to applications of graphene based devices and reveal a number of interesting phenomena. The critical roadblock for graphene electronics is the absence of a band gap. We first focus on chemical functionalization of graphene as a route to band gap engineering. This is first achieved via grafting nitrophenyl groups onto single layer graphene sheets. The functionalized graphene samples behave like semiconductors. Substrate supported and suspended samples demonstrate transport gaps as large as ~0.1eV and ~1eV, respectively. Secondly, we developed a different chemical functionalization approach based on organometallic chemistry. Apart from behaving like semiconductors, functionalized samples also retains the high mobility of the pristine state. The second part of the thesis focuses on physical modifications of graphene a. Suspended graphene-based switch was developed using a special pulsing breakdown technique. Voltage pulses of 2.5V~4V and 8V can turn a switch device to ON (high conductance) state and OFF (low conductance) state, respectively. We provide experimental evidence that these behaviors arise from motions of atomic-scale carbon chains and reformation of chemical bonds. Finally, strain engineering is another approach for modifying transport properties of graphene. We proposed and developed novel nano-electromechanical system (NEMS)-like devices that allows in situ modulation of strain on suspended graphene flakes, which in turn induces interesting changes in both transport and morphological properties of graphene. In summary, this dissertation presents our studies on chemical and physical modification approaches of graphene samples, and related novel phenomena that emerge amid these devices, with implications on next generation electronic devices.

First-Principles Modelling of the Properties of Graphene Modified with Fluorine Atoms

Graphene With Patterned Fluorination: Morphology Modulation And Implications

Essential Properties of Fluorinated Graphene and Graphene Nanoribbons

Novel First-Principles Insights into Graphene Fluorination

Effect of Fluorine Patterns on Electronic Transport in Fluorinated Graphene

Fluorinated graphene: Fluorographene: A Two-Dimensional Counterpart of Teflon (Small 24/2010)

Fluorination-Enriched Electronic and Magnetic Properties in Graphene Nanoribbons

Tuning the electronic transport properties of graphene through functionalisation with fluorine

Interface engineering of epitaxial graphene on SiC() via fluorine intercalation: A first principles study

Modelling of epitaxial graphene functionalization

Electronic and magnetic properties of graphene-fluorographene nanoribbons: Controllable semiconductor-metal transition

Fluorinating the graphene-like BeO monolayer: A spin-polarized first principles study of the electronic, magnetic and optical properties

Homogeneous Fluorine Distribution in Graphene through Thermal Dissociation of Molecular F 2 : Implications for Thermal Conduction and Electrical Insulation

Fluorographene: Two Dimensional Counterpart of Teflon

Interface Engineering of Epitaxial Graphene on SiC(0001¯) Via Fluorine Intercalation: A First Principles Study

High elastic moduli, controllable bandgap and extraordinary carrier mobility in single-layer diamond

DFT modeling of the covalent functionalization of graphene: from ideal to realistic models

Electron properties of fluorinated single-layer graphene transistors

Absence of stable atomic structure in fluorinated graphene

Mechanical and Electrical Properties of Modified Graphene Devices

Spin-orbit coupling in fluorinated graphene