Abstract:Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However, Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency, resulting in reduced luminous efficiency and severe brightness non-uniformity. Here, we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers. Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate, which possesses a low dislocation density of 5.25 × 108 cm-2, small wafer bowing of 16.7 μm, and high wavelength uniformity (standard deviation STDEV < 1 nm), scalable to 6-inch sizes. Based on the high-quality GaN epilayers, green Micro-LEDs with 5 μm pixel sizes are designed with vertical non-alignment bonding technology. An atomic sidewall passivation method combined with wet treatment successfully addressed the Micro-LED sidewall damages and steadily produced nano-scale surface textures on the pixel top, which unlocked the internal quantum efficiency of the high-quality green GaN-on-Si epi-wafer. Ultra-high brightness exceeding 107 cd/m2 (nits) is thus achieved in the green Micro-LEDs, marking the highest reported results. Furthermore, integration of Micro-LEDs with Si-based CMOS circuits enables the realization of green Micro-LED displays with resolution up to 1080 × 780, realizing high-definition playback of movies and images. This work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.

3.3: Higher External Quantum Efficiency with Lower Current Density Injection of <10 μm Pixel Size Arrays for Display Application

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Ultra-low-defect Homoepitaxial Micro-Leds with Enhanced Efficiency and Monochromaticity for High-Ppi AR/MR Displays

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

High-output power GaN-LED based on surface plasmon enhancement

Recent Advances on GaN-Based Micro-LEDs

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure

Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm

Investigation of Ultrasmall Sidewall-Insulated GaN Via with Large Aspect Ratio for the Strategy of Vertically Stacked Full-Color Micro-LEDs

Operating Behavior of Micro-Leds on a GaN Substrate at Ultrahigh Injection Current Densities

Size-Dependent Quantum Efficiency of Flip-Chip Light-Emitting Diodes at High Current Injection Conditions

Modulation Characteristics of GaN-Based Light-Emitting-Diodes for Visible Light Communication

High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays

Growth and Characterization of Micro-LED Based on GaN Substrate

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

Study on 3D Thermal Transport in Micro-Leds on GaN Substrate at the Level of Kw/cm2

Gallium Nitride Blue/Green Micro-LEDs for High Brightness and Transparency Display