Abstract:The emergence of borophene has triggered soaring interest in the investigation of its superior structural anisotropy, a novel photoelectronic property for diverse potential applications. However, the structural instability and need of a metal substrate for depositing borophene restrict its large-scale applications toward high-performance electronic and optoelectric devices. van der Waals epitaxy is regarded as an efficient technique for growing superb two-dimensional materials onto extensive functional substrates, but the preparation of stable and controllable borophene on nonmetallic substrates is still not reported. Here, we demonstrate that borophene films can be synthesized onto a mica substrate by van der Waals epitaxy, where hydrogen and NaBH4 are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene coincides with the predicted α′-boron sheet. The borophene-based photodetector shows an excellent photoresponsivity of 1.04 A W–1 and a specific detectivity of 1.27 × 1011 Jones at a reversed bias of 4 V under illumination of a 625 nm light-emitting diode, which are remarkably superior to those of reported boron nanosheets. This work facilitates further studies of borophene toward its attractive properties and applications in novel optoelectronic devices and integrated circuits.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c03146?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c03146</a>.SEM images of the borophene films prepared at 650 °C for different times, TEM images and corresponding SAED patterns of the borophene films in some areas of parallel samples at 650 °C for 60 min, theoretical calculation of borophene, full-scale XPS survey of borophene, high-resolution XPS spectra of B 1s of the borophene films prepared at different temperatures, SEM images of the borophene films prepared at different temperatures, high-resolution XPS spectra of B 1s of the borophene films prepared at 650 °C for different durations, optoelectronic performance of the borophene-based device under light illumination with different wavelengths, and comparison of key features of the borophene-based device with previously reported state-of-the-art photodetectors (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c03146/suppl_file/am1c03146_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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