Abstract:Silicon photonics is now widely accepted as a key technology in a variety of systems. But owing to material limitations, now it is challenging to greatly improve the performance after decades of development. Here, we show a high-performance broadband photodetector with significantly enhanced sensitivity and responsivity operating over a wide wavelength range of light from near-ultraviolet to near-infrared at low power consumption. The specially designed textured top ceiling electrode works effectively as an antireflection layer to greatly improve the absorption of near-infrared light, thereby overcoming the absorption limitation of near-infrared light. Instead of the conventional p-n junction and p-intrinsic-n junction, we introduce a similar to 15 nm thick alumina insulator layer between a p-type Si substrate and n-type ZnO nanowire (NW) arrays, which significantly enhances the charge carrier separation and collection efficiency. The photosensing responsivity and sensitivity are found to be nearly 1 order of magnitude higher than that of a reference device of p-Si/n-ZnO NW arrays, significantly higher than the commercial silicon photodiodes as well. The light-induced charge carriers flow across the appropriate thickness of insulator layer via the quantum mechanical Fowler-Nordheim tunneling mechanism. By virtue of the piezo-phototronic effect, the charge density at the interfaces can be tuned to alter the energy bands and the potential barrier distance for tunneling. Additionally, along with the use of incident light of different wavelengths, the influence of the insulator layer on the transport of electrons and holes separately is further investigated. The demonstrated concepts and study would lead to sensitivity improvement, quality enhancement of data transfer, decrease of power consumption, and cost reduction of silicon photonics.

Highly Sensitive Detection of Infrared Photons by Nondegenerate Two-Photon Absorption Under Midinfrared Pumping

Single-Photon Infrared Imaging With a Silicon Camera Based on Long-Wavelength-Pumping Two-Photon Absorption

Infrared Single-Photon Detector based on Silicon Two-Photon Absorption

Mid-infrared single-pixel imaging at the single-photon level

High-sensitivity quantum sensing with pump-enhanced spontaneous parametric down-conversion

Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides

GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits

Silicon single-photon avalanche diodes with nano-structured light trapping

Ultra-sensitive mid-wavelength-infrared upconversion detector

High performance InGaAs/InP single-photon avalanche diode using DBR-metal reflector and backside micro-lens

Ultra-narrowband interference circuits enable low-noise and high-rate photon counting for InGaAs/InP avalanche photodiodes

Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling

Real-time, chirped-pulse heterodyne detection at room-temperature with 100GHz 3dB-bandwidth mid-infrared quantum-well photodetectors

Ultrafast single-photon detection using nanophotonic parametric amplifiers

Photon counting 1060-nm hybrid photomultiplier with high quantum efficiency

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 Μm

Internal Cancellation of Spikes Using Two Avalanche Photodiodes in Series for Single Photon Detection

Mid-infrared single-photon upconversion spectroscopy enabled by nonlocal wavelength-to-time mapping

A 64-pixel mid-infrared single-photon imager based on superconducting nanowire detectors

Near-single-photon atto-watt detection at mid-infrared wavelengths by a room-temperature balanced heterodyne set-up

Mid-infrared Single Photon Detector with Superconductor Mo$_{80}$Si$_{20}$ Nanowire