Controlling the Luminescence of Rare-Earth Chalcogenide Iodides RE 3 (Ge 1– x Si x ) 2 S 8 I ( RE = La, Ce, and Pr) and Ce 3 Si 2 (S 1– y Se y ) 8 I
Dundappa Mumbaraddi,Vidyanshu Mishra,Mohammed Jomaa,Xiaoyuan Liu,Abhoy Karmakar,Sambhavi Thirupurasanthiran,Vladimir K. Michaelis,Andrew P. Grosvenor,Alkiviathes Meldrum,Arthur Mar
DOI: https://doi.org/10.1021/acs.chemmater.3c01113
IF: 10.508
2023-07-18
Chemistry of Materials
Abstract:The rare-earth chalcogenide iodides RE 3(Ge1–x Si x )2S8I (RE = La, Ce, and Pr) and Ce3Si2(S1–y Se y )8I were prepared by reactions of the elements at 900 °C. Phase-pure samples and complete solid solutions were obtained for all series, as determined by powder X-ray diffraction patterns, with the cell parameters evolving smoothly. They adopt the monoclinic La3Si2O8Cl-type structure (space group C2/c), containing isolated tetrahedra centered by the tetrel atoms and separated by the RE and I atoms. Single-crystal X-ray diffraction studies indicate that substitution of Si for Ge atoms in RE 3(Ge1–x Si x )2S8I leads to complete disorder of the tetrel atoms, whereas partial substitution of Se for S atoms in Ce3Si2(S1–y Se y )8I occurs with preferential occupation of Se atoms. The optical band gaps increase slightly upon substitution with Si in RE 3(Ge1–x Si x )2S8I (or negligibly in the case of the Ce-containing series, remaining at 2.8 eV), and they decrease dramatically upon substitution with Se in Ce3Si2(S1–y Se y )8I, from 2.8 to 1.9 eV. These band gaps are direct according to electronic structure calculations. The strong blue photoluminescence emission in Ce3Si2S8I shifts slightly to blue-green in Ce3(Ge0.25Si0.75)2S8I and significantly to green in Ce3Si2(S0.81Se0.19)8I, as quantified by their chromaticity coordinates. Increasing the concentration of Ge or Se tends to decrease the photoluminescence intensity and lifetime. For Ce3Si2S8I, the activation energy for thermal quenching is 0.68 eV.
materials science, multidisciplinary,chemistry, physical