Abstract:In this work, it is successfully introduced that periodic strain precisely into monolayer MoS2 by direct growth on nano‐patterned sapphire substrates (NPSS), providing a novel and effective method for substrate‐induced thermal compressive strain. Moreover, based on the nano‐patterned MoS2, high‐performance photodetectors are achieved with the highest detectivity and fastest response speed ever reported in the photoconductive devices based on MoS2. The extraordinary mechanical compliance of 2D molybdenum disulfide (MoS2) makes it an ideal candidate for strain modulation of various electrical and optical properties. However, developing facile methods for accurate and stable engineering of strain still remains a major challenge. Here, a novel and effective method is demonstrated for introducing periodic strain into monolayer MoS2 by direct growth on nano‐patterned sapphire substrates (NPSS). A mixed aqueous solution of Na2MoO4 and NaOH is spin‐coated on the NPSS and sulfurated in one step by chemical vapor deposition (CVD). Highly oriented monolayer MoS2 single‐crystal nanosheets with high quality and few sulfur vacancies are achieved conformally on the NPSS via a liquid‐mediated growth mode. Notably, the periodically distributed blue shift of the PL emission peak demonstrated periodic compressive strain is introduced into the nano‐patterned MoS2 via the thermal expansion difference between MoS2 and substrates. Furthermore, photodetectors fabricated using the nano‐patterned monolayer MoS2 exhibit a high photo‐to‐dark current ratio (PDCR) over 106, an excellent detectivity of 5.4 × 1013 Jones, and a fast photoresponse of 7.7 ms, owing to the strain‐induced back‐to‐back built‐in electric field, enhanced light absorption by light‐scattering effect and fewer S vacancy defects. The scanning imaging demonstration based on the single‐pixel nano‐patterned MoS2 photodetector further confirms its great potential in image sensors. This work hereby presents a pathway for direct conformal growth of nano‐patterned monolayer MoS2 with precisely periodic strain, which should inspire the applications for high‐performance optoelectronic devices via the strategy of patterned substrate engineering by the periodic nanostructures.

Strain-Enhanced Large-Area Monolayer MoS 2 Photodetectors

A strain tunable single-layer MoS2 photodetector

Conformal Growth of Nano‐Patterned Monolayer MoS2 with Periodic Strain via Patterned Substrate Engineering for High‐performance Photodetectors

Strain‐Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS 2

Strain-Enhanced Mobility of Monolayer MoS2

Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

Influences of Contact Metals on the Performances of MoS2 Devices under Strains

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Stretchable MoS 2 Artificial Photoreceptors for E‐Skin

Direct X-Ray Measurements of Strain in Monolayer MoS$_{2}$ from Capping Layers and Geometrical Features

Strain Engineering of Selective Chemical Adsorption on Monolayer MoS_2

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Electronic and optical properties of strain-regulated O-doped monolayer MoS2

Strain Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe2

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics.

Reduction in Thermal Conductivity of Monolayer MoS2 by Large Mechanical Strains for Efficient Thermal Management

N-doped MoS2 via assembly transfer on an elastomeric substrate for high-photoresponsivity, air-stable and stretchable photodetector

Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation