Light-Stimulated Artificial Synapse with Memory and Learning Functions by Utilizing an Aqueous Solution-Processed In 2 O 3 /AlLiO Thin-Film Transistor

Dongliang Jiang,Jun Li,Wenhui Fu,Qi Chen,Yaohua Yang,Youhang Zhou,Jianhua Zhang
DOI: https://doi.org/10.1021/acsaelm.0c00474
IF: 4.494
2020-08-11
ACS Applied Electronic Materials
Abstract:Light-stimulated artificial synapse shows broad application prospects in the field of neuromorphic computing. Implementation of an all-inorganic solid oxide phototransistor will be compatible with future development by providing devices with good stability and large-scale production requirements. Here, an all-inorganic light-stimulated In<sub>2</sub>O<sub>3</sub>/AlLiO thin film transistor is fabricated by a fully aqueous solution, whose threshold voltage and subthreshold swing are about 0.47 V and 0.25 V/decade, respectively. The devices can respond to optical signals and successfully simulate some important synaptic characteristics, including the transition from short-term memory to long-term memory. Under the condition of different light intensities, Pavlov's experiment is simulated to study the behavior of brain-like associative learning. In addition, this work emulates the behavior of photonic potentiation and electric depression, which can realize the erasure of optical information storage through electrical signals and maintain good erasable repeatability. More significantly, a simple fabrication of an In<sub>2</sub>O<sub>3</sub>/AlLiO all-inorganic synapse transistor can provide an effective strategy for the artificial synapses driven by optical signals.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00474?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00474</a>.Comparison of characteristics of artificial synapses based on oxide transistors; mechanisms of photoresponse in the In<sub>2</sub>O<sub>3</sub>/AlLiO TFT device; the relationship between EPSC and pulse width; effects of light intensity changes on EPSC under multiple pulses; schematic diagram of multiple pulse trainings to achieve the change from STM to LTM; optical responses at different light wavelengths; schematic diagram of two UV lights with different intensities acting on the TFT; and the erasure experiments of the TFT (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00474/suppl_file/el0c00474_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic
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