Controlled growth of 2D ultrathin Ga 2 O 3 crystals on liquid metal

Menghan Li,Lin Li,Yixuan Fan,Le Huang,Dechao Geng,Wensheng Yang

DOI: https://doi.org/10.1039/d1na00375e

IF: 5.598

2021-01-01

Nanoscale Advances

Abstract:2D metal oxides (2DMOs) have drawn intensive interest in the past few years owing to their rich surface chemistry and unique electronic structures.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Yubing Zhou,Bing Deng,Yu Zhou,Xibiao Ren,Jianbo Yin,Chuanhong Jin,Zhongfan Liu,Hailin Peng

DOI: https://doi.org/10.1021/acs.nanolett.6b00324

IF: 10.8

2016-01-01

Nano Letters

Abstract:The growth of high-quality two-dimensional (2D) layered chalcogenide crystals is highly important for practical applications in future electronics, optoelectronics, and photonics. Current route for the synthesis of 2D chalcogenide crystals by vapor deposition method mainly involves an energy intensive high-temperature growth process on solid substrates, often suffering from inhomogeneous nucleation density and grain size distribution. Here, we first demonstrate a facile vapor-phase synthesis of large-area high-quality 2D layered chalcogenide crystals on liquid metal surface with relatively low surface energy at a growth temperature as low as ∼100 °C. Uniform and large-domain-sized 2D crystals of GaSe and GaxIn1-xSe were grown on liquid metal surface even supported on a polyimide film. As-grown 2D GaSe crystals have been fabricated to flexible photodetectors, showing high photoresponse and excellent flexibility. Our strategy of energy-sustainable low-temperature growth on liquid metal surface may open a route to the synthesis of high-quality 2D crystals of Ga-, In-, Bi-, Hg-, Pb-, or Sn-based chalcogenides and halides.
Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Hanchi Xia,Yongtao Yang,Jia Cao,Fan Zhang,Yang Zhang,Zhenping Wu

DOI: https://doi.org/10.1016/j.vacuum.2023.112388

IF: 4

2023-09-01

Vacuum

Abstract:The potential of gallium oxide (Ga2O3) as a promising semiconductor for advanced electronics and optoelectronics has been propelled by its wide bandgap, high breakdown voltage tolerance, and excellent chemical and thermal stability. To develop it into an industrial-level application, extensive research needs to be conducted to advance wafer-scale and high-quality epitaxy growth techniques. In this work, a close-coupled showerhead (CCS) metal-organic chemical vapor deposition (MOCVD) system was used to grow wafer-scale Ga2O3 films. Through a detailed examination of growth parameters including substrate temperature, oxygen flow rate, precursor proportion, and chamber pressure, as well as their effect on film crystallinity, surface morphology, and optical properties, a comprehensive growth phase diagram and control over the growth rate of 2-inch Ga2O3 thin films were obtained at a wafer-scale. These findings suggest that the CCS-MOCVD system presents a competitive avenue for future industrial high-speed fabrication of single-phase Ga2O3 films.

materials science, multidisciplinary,physics, applied
Robust Growth of Two-Dimensional Metal Dichalcogenides and Their Alloys by Active Chalcogen Monomer Supply

Yonggang Zuo,Can Liu,Liping Ding,Ruixi Qiao,Jinpeng Tian,Chang Liu,Qinghe Wang,Guodong Xue,Yilong You,Quanlin Guo,Jinhuan Wang,Ying Fu,Kehai Liu,Xu Zhou,Hao Hong,Muhong Wu,Xiaobo Lu,Rong Yang,Guangyu Zhang,Dapeng Yu,Enge Wang,Xuedong Bai,Feng Ding,Kaihui Liu

DOI: https://doi.org/10.1038/s41467-022-28628-7

IF: 16.6

2022-01-01

Nature Communications

Abstract:The precise precursor supply is a precondition for controllable growth of two-dimensional (2D) transition metal dichalcogenides (TMDs). Although great efforts have been devoted to modulating the transition metal supply, few effective methods of chalcogen feeding control were developed. Here we report a strategy of using active chalcogen monomer supply to grow high-quality TMDs in a robust and controllable manner, e.g., MoS2 monolayers perform representative photoluminescent circular helicity of ~92% and electronic mobility of ~42 cm2V-1s-1. Meanwhile, a uniform quaternary TMD alloy with three different anions, i.e., MoS2(1-x-y)Se2xTe2y, was accomplished. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation, reaction, vacancy healing and alloy formation during the growth. Our work offers a degree of freedom for the controllable synthesis of 2D compounds and their alloys, benefiting the development of high-end devices with desired 2D materials.
Direct Growth of 2D MoO2 Single Crystal on SiO2/Si Substrate by Atmospheric Pressure Chemical Vapor Deposition

Junjie Luo,Hongxia Chen,Jing Wang,Feifei Xia,Xintang Huang

DOI: https://doi.org/10.1016/j.matchemphys.2020.123166

IF: 4.778

2020-01-01

Materials Chemistry and Physics

Abstract:Due to its distinct properties, two-dimensional (2D) materials had attracted much attention and plenty of 2D materials had been synthesized and studied. Metal oxides have been widely used in lithium-ion battery, supercapacitor, catalyst, etc, but the corresponding 2D material of metal oxides has not been sufficiently researched. Here, micrometer-scale 2D Molybdenum dioxide (MoO2) single crystals have been successfully synthesized directly on silicon dioxide/silicon (SiO2/Si) substrate by atmospheric pressure chemical vapor deposition, through the reduction by hydrogen. The growth temperature is 690 degrees C, and the reduction reaction lasted with 90 minutes. Raman spectra and x-ray photoelectronic spectroscopy are used to confirm the chemical component of MoO2. The shape of two-dimensional MoO2 single crystals has three types, including standard parallelogram, parallelogram with two angles misses and hexagonal. The growth model of three shape types is discussed, and the difference in growth velocity between two growth directions is the key factor of the final shape. The theoretical calculation confirmed the metallic property of as-synthesized 2D MoO2 and its resistivity is 2 x 10(-4) Omega*cm, indicating it has excellent conductivity and may have potential application for conducting films.
Controllable growth of two-dimensional materials on noble metal substrates

Yang Gao,Yang Liu,Zheng Liu

DOI: https://doi.org/10.1016/j.isci.2021.103432

IF: 5.8

2021-12-01

iScience

Abstract:Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.

multidisciplinary sciences
Designed Growth of Large‐Size 2D Single Crystals

Can Liu,Li Wang,Jiajie Qi,Kaihui Liu

DOI: https://doi.org/10.1002/adma.202000046

IF: 29.4

2020-01-01

Advanced Materials

Abstract:In the "post-Moore's Law" era, new materials are highly expected to bring next revolutionary technologies in electronics and optoelectronics, wherein 2D materials are considered as very promising candidates beyond bulk materials due to their superiorities of atomic thickness, excellent properties, full components, and the compatibility with the processing technologies of traditional complementary metal-oxide semiconductors, enabling great potential in fabrication of logic, storage, optoelectronic, and photonic 2D devices with better performances than state-of-the-art ones. Toward the massive applications of highly integrated 2D devices, large-size 2D single crystals are a prerequisite for the ultimate quality of materials and extreme uniformity of properties. However, at present, it is still very challenging to grow all 2D single crystals into the wafer scale. Therefore, a systematic understanding for controlled growth of various 2D single crystals needs to be further established. Here, four key aspects are reviewed, i.e., nucleation control, growth promotion, surface engineering, and phase control, which are expected to be controllable at different periods during the growth. In addition, the perspectives on designed growth and potential applications are discussed for showing the bright future of these advanced material systems of 2D single crystals.
Controlled Growth of Large‐Sized and Phase‐Selectivity 2D GaTe Crystals

Mingqiang Liu,Shuo Yang,Mao Han,Simin Feng,Gui‐Gen Wang,Leyang Dang,Bo Zou,Yawei Cai,Huarui Sun,Jie Yu,Jie‐Cai Han,Zheng Liu

DOI: https://doi.org/10.1002/smll.202007909

IF: 13.3

2021-04-19

Small

Abstract:GaTe has recently attracted significant interest due to its direct bandgap and unique phase structure, which makes it a good candidate for optoelectronics. However, the controllable growth of large‐sized monolayer and few‐layer GaTe with tunable phase structures remains a great challenge. Here the controlled growth of large‐sized GaTe with high quality, chemical uniformity, and good reproducibility is achieved through liquid‐metal‐assisted chemical vapor deposition method. By using liquid Ga, the rapid growth of 2D GaTe flakes with high phase‐selectivity can be obtained due to its reduced reaction temperature. In addition, the method is used to synthesize many Ga‐based 2D materials and their alloys, showing good universality. Raman spectra suggest that the as‐grown GaTe own a relatively weak van der Waals interaction, where monoclinic GaTe displays highly‐anisotropic optical properties. Furthermore, a p‐n junction photodetector is fabricated using GaTe as a p‐type semiconductor and 2D MoSe2 as a typical n‐type semiconductor. The GaTe/MoSe2 heterostructure photodetector exhibits large photoresponsivity of 671.52 A W−1 and high photo‐detectivity of 1.48 × 1010 Jones under illumination, owing to the enhanced light absorption and good quality of as‐grown GaTe. These results indicate that 2D GaTe is a promising candidate for electronic and photoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Controlled Growth and Size-Dependent Magnetic Domain States of 2D γ-Fe 2 O 3

Tao Wang,Zhiwei Fan,Wuhong Xue,Huali Yang,Run-Wei Li,Xiaohong Xu

DOI: https://doi.org/10.1021/acs.nanolett.3c03276

IF: 10.8

2023-11-10

Nano Letters

Abstract:Nonlayered two-dimensional (2D) magnets have attracted special attention, as many of them possess magnetic order above room temperature and enhanced chemical stability compared to most existing vdW magnets, which offers remarkable opportunities for developing compact spintronic devices. However, the growth of these materials is quite challenging due to the inherent three-dimensionally bonded nature, which hampers the study of their magnetism. Here, we demonstrate the controllable growth of...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

Se-Yang Kim,Jinsung Kwak,Cristian V Ciobanu,Soon-Yong Kwon

DOI: https://doi.org/10.1002/adma.201804939

Abstract:An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)2 atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.
Growth of Two-dimensional Compound Materials: Controllability, Material Quality, and Growth Mechanism

Lei Tang,Junyang Tan,Huiyu Nong,Bilu Liu,Hui-Ming Cheng

DOI: https://doi.org/10.1021/accountsmr.0c00063

2020-12-10

Abstract:CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications.

Materials Science
Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

Zhengyang Cai,Bilu Liu,Xiaolong Zou,Hui-Ming Cheng

DOI: https://doi.org/10.1021/acs.chemrev.7b00536

IF: 62.1

2018-01-31

Chemical Reviews

Abstract:Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

chemistry, multidisciplinary
A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides

Ali Zavabeti,Jian Zhen Ou,Benjamin J Carey,Nitu Syed,Rebecca Orrell-Trigg,Edwin L H Mayes,Chenglong Xu,Omid Kavehei,Anthony P O'Mullane,Richard B Kaner,Kourosh Kalantar-Zadeh,Torben Daeneke,Benjamin J. Carey,Edwin L. H. Mayes,Anthony P. O’Mullane,Richard B. Kaner,Kourosh Kalantar-zadeh

DOI: https://doi.org/10.1126/science.aao4249

IF: 56.9

2017-10-20

Science

Abstract:Expanding the world of 2D materials Two-dimensional (2D) materials have a wide variety of potential applications in the electronics industry. However, certain compositions of 2D materials are difficult to obtain owing to the challenges in exfoliating thin sheets from bulk crystals. Zavabeti et al. exploited liquid metals to synthesize 2D Ga 2 O 3 , HfO 2 , Gd 2 O 3 , and Al 2 O 3 . The 2D sheets appear as a surface layer in gallium-based liquid metals after the Hf, Gd, or Al is dissolved into the bulk alloy. The 2D oxide that appears on the surface is the oxide with the lowest energy, suggesting that it should be possible to make other 2D oxides by using the same process. Science , this issue p. 332

multidisciplinary sciences
Controlled Lateral Epitaxial Growth in Vertical Β-Ga2o3 Nanowires on Sapphire by MOCVD

Yongjian Ma,Xiaodong Zhang,Junshuai Li,Xu Cao,Tao He,Li Zhang,Wenbo Tang,Kun Xu,Yaming Fan,Yong Cai,Houqiang Fu,Baoshun Zhang

DOI: https://doi.org/10.1088/1361-6463/abfc8c

2021-01-01

Journal of Physics D Applied Physics

Abstract:Lateral epitaxial growth in vertical β-Ga2O3 nanowires was studied on sapphire substrates via metal organic chemical vapor deposition by controlling growth temperature and O2 flow rate. The lateral epitaxial growth rate of β-Ga2O3 rise up with increasing growth temperature and decreasing O2 flow rate, which are related to reaction kinetics and parasitic reaction, respectively. In addition, a growth model is proposed to explain the morphology of nanowires when growth condition changes. These results can provide important guidance on addressing slow coalescence rate of β-Ga2O3 nuclear islands on heterogeneous substrates and open new doors to β-Ga2O3 optoelectronic and electronic devices on cost-effective foreign substrates.
Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides

Yu‐Ming Chang,Ni Yang,Jiacheng Min,Fangyuan Zheng,Chun‐Wei Huang,Jui‐Yuan Chen,Yuxiang Zhang,Pengfei Yang,Chenyang Li,Hao‐Yu Liu,Beilin Ye,Jian‐Bin Xu,Han‐Yi Chen,Zhengtang Luo,Wen‐Wei Wu,Kaimin Shih,Jing‐Kai Huang,Lain‐Jong Li,Yi Wan

DOI: https://doi.org/10.1002/adfm.202311387

IF: 19

2023-11-30

Advanced Functional Materials

Abstract:Transition metal dichalcogenides face challenges of applications in advancing semiconductors. This work demonstrates robust reproducibility in the growth of single‐oriented MoS2 on Fe2O3‐decorated sapphire, achieving a remarkable 99% ratio. Simulations reveal a preferred 0° alignment on the Fe2O3‐(0001) surface, ensuring single‐oriented growth even on mirror‐reflected surfaces. These findings highlight Fe2O3‐decorated sapphires as effective substrates, enabling epitaxial control of TMD orientation. 2D semiconducting transition metal dichalcogenides (TMDs) are emerging as promising candidates in the pursuit of advancing semiconductor technology. One major challenge for integrating 2D TMD materials into practical applications is developing an epitaxial technique with robust reproducibility for single‐oriented growth and thus single‐crystal growth. Here, the growth of single‐orientated MoS2 on c‐plane sapphire with atomically thin Fe2O3 decoration layers under various growth conditions is demonstrated. The statistical data highlight robust reproducibility, achieving a single orientation ratio of up to 99%. Density functional theory calculations suggest that MoS2 favors a 0° alignment ([112 ̄0]//[112 ̄0] ) on the Fe2O3 (0001) surface. This preference ensures single‐oriented growth, even on mirror‐reflected exposed surfaces which typically lead to antiparallel domains. Subsequent optical and electrical analyses confirm the uniformity and undoped nature of MoS2 on Fe2O3‐decorated sapphire, showing its quality is comparable to MoS2 grown on bared sapphires. The results underscore the potential of Fe2O3‐decorated sapphire as an effective substrate for the consistent and high‐quality epitaxial growth of 2D TMDs, illuminating the pathway to epitaxial control of 2D TMD orientation through strategic modulation of crystalline atomic surfaces.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Growth and applications of two-dimensional single crystals

Zhibin Zhang,Stiven Forti,Wanqing Meng,Sergio Pezzini,Zehua Hu,Camilla Coletti,Xinran Wang,Kaihui Liu

DOI: https://doi.org/10.1088/2053-1583/acc95a

2023-10-13

Abstract:Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisite to realize 2D-based high-performance applications. In this review, we aim to provide an in-depth analysis of the state-of-the-art technology for the growth and applications of 2D materials, with particular emphasis on single crystals. We first summarize the major growth strategies for monolayer 2D single crystals. Following that, we discuss the growth of multilayer single crystals, including the control of thickness, stacking sequence, and heterostructure composition. Then we highlight the exploration of 2D single crystals in electronic and optoelectronic devices. Finally, a perspective is given to outline the research opportunities and the remaining challenges in this field.

Materials Science,Applied Physics
Growth of Single-crystalline Transition Metal Dichalcogenides Monolayers with Large-size

Ningxia Normal University,Jiao Liying

DOI: https://doi.org/10.1007/s40242-020-0188-x

IF: 3.1

2020-01-01

Chemical Research in Chinese Universities

Abstract:Two-dimensional(2D) transition metal dichalcogenides(TMDCs) semiconductors, such as monolayers of molybdenum disulfide(MoS2) and tungsten disulfide(WS2) can potentially serve as ultrathin channel materials for building short channel field-effect transistors(FETs) to further extend Moore's Law. It is essential to develop control-lable approaches for the synthesis of large single crystals of these 2D semiconductors to promote their practical applications in future electronics. In this short review, we summarized the recent advances on the chemical vapor deposition(CVD) of single crystalline semiconducting 2D TMDCs with a large size. We first discussed the driving force and urgent demands on developing controllable approaches for the growth of large 2D TMDCs single crystals and then summarized the current strategies and representative studies on the CVD growth of large 2D single crystals. Finally, we discussed the challenges and future directions in this topic.
Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse

Xufan Li,Ming-Wei Lin,Alexander A. Puretzky,Juan C. Idrobo,Cheng Ma,Miaofang Chi,Mina Yoon,Christopher M. Rouleau,Ivan I. Kravchenko,David B. Geohegan,Kai Xiao

DOI: https://doi.org/10.1038/srep05497

IF: 4.6

2014-01-01

Scientific Reports

Abstract:Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still challenging. Here, we report the controlled synthesis of 2D GaSe crystals on SiO 2 /Si substrates using a vapor phase deposition method. For the first time, uniform, large (up to ~60 μm in lateral size), single-crystalline, triangular monolayer GaSe crystals were obtained and their structure and orientation were characterized from atomic scale to micrometer scale. The size, density, shape, thickness and uniformity of the 2D GaSe crystals were shown to be controllable by growth duration, growth region, growth temperature and argon carrier gas flow rate. The theoretical modeling of the electronic structure and Raman spectroscopy demonstrate a direct-to-indirect bandgap transition and progressive confinement-induced bandgap shifts for 2D GaSe crystals. The 2D GaSe crystals show p-type semiconductor characteristics and high photoresponsivity (~1.7 A/W under white light illumination) comparable to exfoliated GaSe nanosheets. These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors.
Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Zhepeng Zhang,Lauren Hoang,Marisa Hocking,Jenny Hu,Gregory Zaborski Jr.,Pooja Reddy,Johnny Dollard,David Goldhaber-Gordon,Tony F. Heinz,Eric Pop,Andrew J. Mannix

2024-03-06

Abstract:Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.

Applied Physics,Materials Science
Direct growth of 2D MoO2 single crystal on SiO2/Si substrate by atmospheric pressure chemical vapor deposition

Junjie Luo,Hongxia Chen,Jing Wang,Feifei Xia,Xintang Huang

DOI: https://doi.org/10.1016/j.matchemphys.2020.123166

IF: 4.778

2020-01-01

Materials Chemistry and Physics

Abstract:Due to its distinct properties, two-dimensional (2D) materials had attracted much attention and plenty of 2D materials had been synthesized and studied. Metal oxides have been widely used in lithium-ion battery, supercapacitor, catalyst, etc, but the corresponding 2D material of metal oxides has not been sufficiently researched. Here, micrometer-scale 2D Molybdenum dioxide (MoO2) single crystals have been successfully synthesized directly on silicon dioxide/silicon (SiO2/Si) substrate by atmospheric pressure chemical vapor deposition, through the reduction by hydrogen. The growth temperature is 690 degrees C, and the reduction reaction lasted with 90 minutes. Raman spectra and x-ray photoelectronic spectroscopy are used to confirm the chemical component of MoO2. The shape of two-dimensional MoO2 single crystals has three types, including standard parallelogram, parallelogram with two angles misses and hexagonal. The growth model of three shape types is discussed, and the difference in growth velocity between two growth directions is the key factor of the final shape. The theoretical calculation confirmed the metallic property of as-synthesized 2D MoO2 and its resistivity is 2 x 10(-4) Omega*cm, indicating it has excellent conductivity and may have potential application for conducting films.

Controlled growth of 2D ultrathin Ga 2 O 3 crystals on liquid metal

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Robust Growth of Two-Dimensional Metal Dichalcogenides and Their Alloys by Active Chalcogen Monomer Supply

Direct Growth of 2D MoO2 Single Crystal on SiO2/Si Substrate by Atmospheric Pressure Chemical Vapor Deposition

Controllable growth of two-dimensional materials on noble metal substrates

Designed Growth of Large‐Size 2D Single Crystals

Controlled Growth of Large‐Sized and Phase‐Selectivity 2D GaTe Crystals

Controlled Growth and Size-Dependent Magnetic Domain States of 2D γ-Fe 2 O 3

Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

Growth of Two-dimensional Compound Materials: Controllability, Material Quality, and Growth Mechanism

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides

Controlled Lateral Epitaxial Growth in Vertical Β-Ga2o3 Nanowires on Sapphire by MOCVD

Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides

Growth and applications of two-dimensional single crystals

Growth of Single-crystalline Transition Metal Dichalcogenides Monolayers with Large-size

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Direct growth of 2D MoO<sub>2</sub> single crystal on SiO<sub>2</sub>/Si substrate by atmospheric pressure chemical vapor deposition