The effect of crystal distortion and domain structure on piezoelectric properties of BiFeO3 thin films

N. Okamoto,K. Kariya,N. Fujimura,T. Yoshimura
DOI: https://doi.org/10.7567/JJAP.57.11UF07
IF: 1.5
2018-02-08
Japanese Journal of Applied Physics
Abstract:BiFeO3 films are promising piezoelectric materials for vibration energy harvesting. In this study, the effects of the crystallographic symmetry and domain structure, which significantly depends on film thickness owing to the strain from the substrate, on the direct piezoelectric properties of (100) BiFeO3 epitaxial films were investigated. The BiFeO3 epitaxial films with thicknesses from 100 to 1000 nm were grown by rf magnetron sputtering. The crystal and domain structures of the films were characterized by reciprocal space mapping of X-ray diffraction and piezoelectric force microscopy. It was found that the highest e31,f coefficient of −3.9 C/m2 was obtained on the 600-nm-thick film, which has an intermediate structure between tetragonal and rhombohedral. This suggests that the phase transition by lattice relaxation is effective for improving the piezoelectric properties of BiFeO3 films.
Engineering,Materials Science,Physics
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