Abstract:In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally the doping response of a given material. Similarly, the main defect trends are also widely understood for regular metals (e.g., Cu and Zn discussed herein). With the development of electronic structure theory, a unique class of quantum materials - gapped metals (e.g., Ca6Al7O16, SrNbO3, In15SnO24, and CaN2) that exhibit characteristics of both metals and insulators - has been identified. While these materials have internal band gaps similar to insulators, their Fermi level is within one of the main band edges, giving a large intrinsic free carrier concentration. Such unique electronic structures give rise to unique defect physics, where the formation of acceptor or donor defect directly affects not only the electronic structure but also can substantially shift the Fermi level. Motivated by this, herein, we develop a fundamental first-principles theory of defect formation in gapped metal with a primary focus on accurate calculations of defect formation energy. We demonstrate that due to electron-hole recombination, the formation of acceptor defects in n-type gapped metals results in significant dependence of defect formation energy on supercell size, which we explain by the change of band filling and its effect on the defect formation energetics. To accurately describe defect formation energy, we revisit the phenomenology of band-filling corrections and demonstrate the effect of this correction, accurate potential alignment, and other factors that can affect defect energetics. Thus, this work not only sheds light on the intrinsic properties of gapped metals but, in general, establishes a theoretical foundation for analyzing defects in gapped metals.

Atomistic Simulations of Defect Structures in Rare-Earth-Doped Magnesium Oxide

Defect Structures of Rare Earth-Doped Lutetium Oxide and Impacts of Li Co-Dopant

Electronic Structure Calculations of Rare-Earth-Doped Magnesium Oxide Based on Density Functional Theory

Local Lattice Distortion Mediated Formation of Stacking Faults in Mg Alloys

Defect physics in complex energy materials

Theory of Defect-Induced Crystal Field Perturbations in Rare-Earth Magnets

Theory of defect-induced crystal field perturbations in rare earth magnets

Atomistic Calculation of Association Energy in Doped Ceria

Defect-Strain Engineering for Multiferroic and Magnetoelectric Properties in Epitaxial (110) Ferroelectric Lead Titanate

Defect Engineering for Nontrivial Multiferroic Orders in SrTiO3

Ab-initio study of the effect of rare-earth elements on the stacking faults of Mg solid solutions

Atomic Scale Investigation on Precipitates and Defects of Mg–RE Alloys: A Review

Theoretical investigation of formation and diffusion mechanisms for point defects in ytterbium and lutetium silicates

Native Defects and their Doping Response in the Lithium Solid Electrolyte Li7La3Zr2O12

Defect mechanisms, oxygen vacancy trapping ability in rare‐earth doped BaTiO3 from first‐principles and thermodynamics

Theoretical investigation of intrinsic point defects and the oxygen migration behavior in rare earth hafnates

An extended computational approach for point-defect equilibria in semiconductor materials

Localized dislocation interactions within slip bands and crack initiation in Mg-10Gd-3Y-0.3Zr alloy

First-principles calculations for intrinsic defects in MgO: Positron lifetime and momentum distribution of electron-positron pairs

Unveiling Defect Physics in Gapped Metals: A Theoretical Investigation into Defect Formation and Electronic Structure Interplay

Precipitation strengthening in magnesium alloys containing rare earth elements