Mn doping nanoarchitectonics of NiO nanoparticles with various property impacts for optoelectronic devices and diluted magnetic semiconductor applications
P. Kathiravan,K. Thillaivelavan,G. Viruthagiri
DOI: https://doi.org/10.1007/s10854-024-13658-2
2024-11-04
Journal of Materials Science Materials in Electronics
Abstract:In the current study, the chemical precipitation approach has been successfully used to synthesize NiO and Mn-doped NiO nanoparticles at different concentrations (0.01 M to 0.04 M). The following methods, including XRD, FTIR, UV, PL, SEM, EDX, TEM, HR-TEM, SAED and VSM, were employed to characterize the materials' structural, functional group, optical, morphological, elemental analysis and magnetic properties. The pure NiO and Mn-doped NiO nanoparticles have average grain sizes of 16.37 nm, 10.41 nm, 15.16 nm, 12.23 nm, and 14.34 nm, respectively. Strong absorption peak in the ultraviolet visible region is observed in the UV absorbance investigation. Band gaps of 2.32 eV, 2.22 eV, 2.16 eV, 2.14 eV, and 2.25 eV are found in pure NiO and Mn-doped NiO nanoparticles, respectively. Mn-doped NiO nanoparticles (0.01 M—0.03 M) are a potential material for optoelectronic devices because they may effectively reduce their band gap without generating substantial structural alterations at varying concentrations of Mn-doping. The d-spacing values for the undoped and Mn-doped NiO nanoparticles, as determined by the fringe patterns, are 0.24 and 0.23 nm, which coincides with the (111) and (200) planes of cubic NiO, according to the HRTEM pictures. Manganese addition to NiO nanoparticles significantly changed the material's magnetic behavior, changing it from weakly ferromagnetic to ferromagnetic. Overall, Mn-doped NiO nanoparticles have the appropriate optical and magnetic properties, which make them a suitable material for optoelectronic devices and DMS applications.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied