Increasing the Mn Doping Level in Semiconductor Nanocrystals by Sol–gel Auto-Combustion Method

Yuwen Jiang,Changyong Lan,Shuhu Yang,Shaoguang Yang

DOI: https://doi.org/10.1016/j.matlet.2012.08.128

IF: 3

2012-01-01

Materials Letters

Abstract:Alloyed wurtzite Zn49Cd51S nanocrystals with nearly 15at% Mn doped have been synthesized by the sol–gel auto-combustion method. At this work, the doping level of Mn in nanoscale sulfide semiconductors is substantially higher than early reports, so far as we know. The max doping level was established indirectly by X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy: no impurities were found in the XRD pattern of the product until the doping level was increased to 15at%; a characteristic Mn 585nm emission appeared and the defect related emission diminished in the PL spectrum, when Mn was incorporated into the Zn49Cd51S nanocrystals; and the intensity of Mn 585nm emission decreased rapidly, when the doping level was increased from 5at% to 15at%. Factors that may benefit the Mn doping were discussed.