Abstract:We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters. In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons. The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.

Time-domain measurements of quasiparticle tunneling rates in a single-Cooper-pair transistor

A quantitative study of quasiparticle traps using the single-Cooper-pair-transistor

Rf-induced transport of Cooper pairs in superconducting single electron transistors in a dissipative environment

Measurements Of Quasiparticle Tunneling Dynamics In A Band-Gap-Engineered Transmon Qubit

Nonequilibrium quasiparticles and $2e$ periodicity in single-Cooper-pair transistors

Supercurrent parity-meter in a nanowire Cooper-pair transistor

Supercurrent parity meter in a nanowire Cooper pair transistor

Cooper Pair Cotunneling in Single Charge Transistors with Dissipative Electromagnetic Environment

Direct detection of quasiparticle tunneling with a charge-sensitive superconducting sensor coupled to a waveguide

Direct observation of time correlated single-electron tunneling

Cooper pair tunnelling and quasiparticle poisoning in a galvanically isolated superconducting double dot

Probing quasiparticle excitations in a hybrid single electron transistor

Direct measurement of spin-flip rates in single-electron tunneling

3e tunneling processes in a superconducting single-electron tunneling transistor

Electron counting in quantum dots

A quantitative study of spin-flip co-tunneling transport in a quantum dot

Measurement of Quasiparticle Diffusion in a Superconducting Transmon Qubit

Dispersive measurements of superconducting qubit coherence with a fast, latching readout

Single Cooper-pair pumping in the adiabatic limit and beyond

Observation of quantum capacitance in the Cooper-pair transistor

First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi$_2$(111)/Si(111) interfaces