Moiré materials under strain

Giulia Pacchioni

DOI: https://doi.org/10.1038/s41578-024-00699-6

IF: 83.5

2024-06-27

Nature Reviews Materials

Abstract:A paper in the Journal of Applied Physics reports a way to apply strain to two-dimensional devices while measuring simultaneously their electrical and optical properties.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

Moiré straintronics: a universal platform for reconfigurable quantum materials

M. Kögl,P. Soubelet,M. Brotons-Gisbert,A. V. Stier,B. D. Gerardot,J. J. Finley

DOI: https://doi.org/10.1038/s41699-023-00382-4

IF: 10.516

2023-04-19

npj 2D Materials and Applications

Abstract:Large-scale two-dimensional (2D) moiré superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moiré pattern, critically determine the emergent properties and phase diagrams. To date, the relative twist angle between two layers has been the primary tuning parameter for a given choice of constituent crystals. Here, we establish strain as a powerful mechanism to in situ modify the moiré periodicity and symmetry. We develop an analytically exact mathematical description for the moiré lattice under arbitrary in-plane heterostrain acting on any bilayer structure. We demonstrate the ability to fine-tune the moiré lattice near critical points, such as the magic angle in bilayer graphene, or fully reconfigure the moiré lattice symmetry beyond that imposed by the unstrained constituent crystals. Due to this unprecedented simultaneous control over the strength of electronic interactions and lattice symmetry, 2D heterostrain provides a powerful platform to engineer, tune, and probe strongly correlated moiré materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Designing Moiré Patterns by Strain

Federico Escudero,Andreas Sinner,Zhen Zhan,Pierre A. Pantaleón,Francisco Guinea

DOI: https://doi.org/10.1103/PhysRevResearch.6.023203

2024-03-15

Abstract:Experiments conducted on two-dimensional twisted materials have revealed a plethora of moiré patterns with different forms and shapes. The formation of these patterns is usually attributed to the presence of small strains in the samples, which typically arise during their fabrication. In this work we find that the superlattice structure of such systems actually depends crucially on the interplay between twist and strain. For systems composed of honeycomb lattices, we show that this can lead to the formation of practically any moiré geometry, even if each lattice is only slightly distorted. As a result, we show that under strain the moiré Brillouin zone is not a stretched irregular hexagon, but rather a primitive cell that changes according to the geometry of the strained moiré vectors. We identify the conditions for the formation of hexagonal moiré patterns arising solely due to shear or biaxial strain, thus opening the possibility of engineering moiré patterns solely by strain. Moreover, we study the electronic properties in such moiré patterns and find that the strain tends to suppress the formation of the flat moiré bands, even in the strain-induced hexagonal patterns analogous to those obtained by the twist only. Our work explains the plethora of moiré patterns observed in experiments, and provides a solid theoretical foundation from which one can design moiré patterns by strain.

Mesoscale and Nanoscale Physics
Moiré Engineering in 2D Heterostructures with Process-Induced Strain

Tara Peña,Aditya Dey,Shoieb A. Chowdhury,Ahmad Azizimanesh,Wenhui Hou,Arfan Sewaket,Carla L. Watson,Hesam Askari,Stephen M. Wu

DOI: https://doi.org/10.1063/5.0142406

2023-04-03

Abstract:We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial silicon nanofabrication processes. By depositing stressed thin films onto our twisted bilayer graphene samples, heterostrain magnitude and strain directionality can be controlled by stressor film force (film stress x film thickness) and patterned stressor geometry, respectively. We examine strain and moiré interference with Raman spectroscopy through in-plane and moiré-activated phonon mode shifts. Results support systematic C$_{3}$ rotational symmetry breaking and tunable periodicity in moiré superlattices under the application of uniaxial or biaxial heterostrain. Experimental results are validated by molecular statics simulations and density functional theory based first principles calculations. This provides a method to not only tune moiré interference without additional twisting, but also allows for a systematic pathway to explore different van der Waals based moiré superlattice symmetries by deterministic design.

Mesoscale and Nanoscale Physics,Applied Physics
Moiré-templated Strain Patterning in Transition-Metal Dichalcogenides and Application in Twisted Bilayer MoS2

Shuze Zhu,Harley T. Johnson

DOI: https://doi.org/10.1039/c8nr06269b

IF: 6.7

2018-01-01

Nanoscale

Abstract:A general Moiré-templated nanoscale morphology engineering method.
Epitaxial two-dimensional membranes under intrinsic and extrinsic strains

Nicolas Rougemaille,Johann Coraux

DOI: https://doi.org/10.1103/PhysRevB.108.235415

2023-11-28

Abstract:Two-dimensional (2D) materials naturally form moiré patterns with other crystalline layers, such as other 2D material or the surface of a substrate. These patterns add a nanoscale characteristic length in the form of a superlattice: the moiré wavelength. Understanding the origin and characteristics of these patterns is crucial to design/interpret moiré-induced physical properties. Here, we use a mixed continuum mechanics + atomistic modeling to study two experimentally relevant epitaxial 2D materials -- graphene on Ir(111) and MoS$_2$ on Au(111) -- under extrinsic and intrinsic strain. We consider three different scenarios affecting substantially the lattice constant of the 2D materials, the wavelength and corrugation of the moiré pattern. (i) Under the influence of the interaction with the substrate, bending energy produces non trivial variations of the moiré properties, even when the strain is small; (ii) When locked on a progressively strained substrate via the valleys of the moiré, the membranes' nanorippling amplitude goes through several jumps related to relatively smaller jumps in the interatomic distance of the 2D materials; (iii) Finally, increasing the zero-deformation value of this interatomic distance (possibly controlable with temperature or illumination in experiments) the moiré wavelength can either increase or decrease.

Mesoscale and Nanoscale Physics,Materials Science
Noncontacting Optostriction Driven Anisotropic and Inhomogeneous Strain in Two-Dimensional Materials

Jian Zhou,Sheng Mao,Shunhong Zhang

DOI: https://doi.org/10.1103/physrevresearch.2.022059

2020-01-01

Physical Review Research

Abstract:Strain engineering has been well developed and widely used to manipulate properties of materials. For two-dimensional materials, via nanoindentation technique or depositing the materials onto flexible substrates, one usually triggers tensile strains. It would be intriguing to develop strategies to generate strains via noncontacting schemes, such as an optical field, to eliminate lattice damage and additional interactions. Here we theoretically and computationally illustrate an optomechanical approach (referred to as optostriction), which could induce intrinsic strains in materials Taking the well-studied transition metal dichalcogenide monolayers as examples, we predict a large in-plane optostriction with strong anisotropy, owing to their unique directional band transition strength. This optically driven strain method can avoid direct and invasive mechanical contacts with materials, which is easily accessible and guarantees the reversibility of materials. Rather than nanoindentation technique and other similar methods, this optomechanical strain can be either tensile or compressive. Owing to its intrinsicality, compressive strains are robust without suffering Euler's instability. In-plane inhomogeneous strains can be easily achieved via illuminating a Gaussian beam onto the material, adding an interesting approach to realize and measure in-plane optoflexoelectricity. Unlike conventional electric field inducing strains in piezoelectrics, no symmetry constraints are required.
Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling

Yue Zhang,M. Hossain,A. M. van der Zande

DOI: https://doi.org/10.1117/12.2567539

2020-08-20

Abstract:Inhomogeneous and three-dimensional strain engineering in two dimensional materials opens up new avenues to straintronic devices for control strain sensitive photonic properties. Here we present a method to tune strain by wrinkling monolayer WSe2 attached to a 15 nm thick ALD support layer and compressing the heterostructure on a soft substrate. The ALD film stiffens the 2D material, enabling optically resolvable micron scale wrinkling rather than nanometer scale crumpling and folding. Using photoluminescence spectroscopy, we show the wrinkling introduces periodic modulation of the bandgap by 47 meV, corresponding with strain modulation from +0.67% tensile strain at the wrinkle crest to -0.31% compressive strain at the trough. Moreover, we show that cycling the substrate strain mechanically reconfigures the magnitude and direction of wrinkling and resulting band tuning. These results pave the way towards stretchable multifuctional devices based on strained 2D materials.

Materials Science,Physics,Engineering
Optical Strain Engineering Enables Dynamic Spatial Control of 2D Nanomaterial Properties

Malcolm Kadodwala,Paula Laborda Lalaguna,Paul Souchu,Neel Mackinnon,Frances Crimin,Rahul Kumar,Shailendra Kumar Chaubey,Asma Sarguroh,Amy McWilliam,Alexey Ganin,Donald MacLaren,Sonja Franke-Arnold,Jörg Götte,Stephen Barnett,Nikolaj Gadegaard

DOI: https://doi.org/10.21203/rs.3.rs-3499143/v1

2023-01-01

Abstract:Abstract In the era of next generation electronic technologies, the pursuit of reconfigurable circuitry is one of the key strategies for enhancing performance and functionality. The prevailing approach involves utilising individual components with dual functionality to provide reconfigurability. While valuable, this method remains an interim solution, necessitating a platform for recurrent circuitry redesign tailored to specific tasks. The realisation of this technological leap hinges on spatially resolved, dynamic manipulation of a material's electronic properties, an achievement demonstrated herein. We harness the optical forces and torques wielded by light beams endowed with orbital angular momentum to manipulate single monolayers of two-dimensional materials. We provide proof-of-principle evidence for the localised induction of strains that can be used to dynamically control electronic properties within a discrete area. This phenomenon, exemplified using graphene and WS2 monolayers, introduces a transformative paradigm of all-optical strain engineering. It offers an innovative strategy for reconfigurable devices, including the potential for reversible (write-erase-rewrite) optical patterning of electrical circuitry.
Strain-induced tuning of optical properties of layered Mo$S_2$

Shubham Bhagat,Shivani Sharma,Jasvir Singh,Sandeep Sharma

DOI: https://doi.org/10.48550/arXiv.2001.11126

2020-01-29

Mesoscale and Nanoscale Physics

Abstract:The sensitive correlation between optical parameters and strain in Mo$S_2$ results in a totally different approach to tune the optical properties. Usually, an external source of strain is employed to monitor the optical and vibrational properties of a material. It is always challenging to have a precise control over the strain and its consequences on material properties. Here, we report the presence of a compressive strain in Mo$S_2$ crystalline powder and nanosheets obtained via the process of ball-milling and probe sonication. The diffraction peaks in the X-ray diffraction pattern shift to higher 2$\theta$ value implying a compressive strain that increases with the processing time. The absorption spectra, photoluminescence and Raman modes are blue-shifted w.r.t the bulk unprocessed sample. The observed blue-shift is attributed to the presence of compressive strain in the samples. Whereas in thin nano-sheets of Mo$S_2$, it is very likely that both quantum confinement as well as strain result in the observed blue-shift. These results indicate that by optimizing the processing conditions and/or time, a strain of desired amount and hence tunable shift in optical properties of material can be achieved.
Toward Moiré engineering in 2D materials via dislocation theory

Pascal Pochet,Brian C. McGuigan,Johann Coraux,Harley T. Johnson

DOI: https://doi.org/10.1016/j.apmt.2017.07.007

IF: 8.663

2017-12-01

Applied Materials Today

Abstract:We present a framework that explains the strong connection in 2D materials between mechanics and electronic structure, via dislocation theory. Within this framework, Moiré patterns created by layered 2D materials may be understood as dislocation arrays, and vice versa. The dislocations are of a unique type that we describe as van der Waals dislocations, for which we present a complete geometrical description, connected to both stretch and twist Moiré patterns. A simple computational scheme, which reduces the complexity of the electronic interaction between layers in order to make the problem computationally tractable, is introduced to simulate these dislocation arrays, allowing us to predict and explain all of the observed Moiré patterns in 2D material systems within a unique framework. We extend this analysis as well to defects in Moiré patterns, which have been reported recently, and which are the result of defects of the same symmetry in the constituent 2D material layers. Finally, we show that linear defects in the Moiré space can be viewed as unidimensional topological states, and can be engineered using our framework.

materials science, multidisciplinary
Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals

E. Blundo,E. Cappelluti,M. Felici,G. Pettinari,A. Polimeni

DOI: https://doi.org/10.1063/5.0037852

IF: 15

2021-06-01

Applied Physics Reviews

Abstract:The variegated family of two-dimensional (2D) crystals has developed rapidly since the isolation of its forerunner: Graphene. Their plane-confined nature is typically associated with exceptional and peculiar electronic, optical, magnetic, and mechanical properties, heightening the interest of fundamental science and showing promise for applications. Methods for tuning their properties on demand have been pursued, among which the application of mechanical stresses, allowed by the incredible mechanical robustness and flexibility of these atomically thin materials. Great experimental and theoretical efforts have been focused on the development of straining protocols and on the evaluation of their impact on the peculiar properties of 2D crystals, revealing a novel, alluring physics. The relevance held by strain for 2D materials is introduced in Sec. I. Sections II and III present the multiplicity of methods developed to induce strain, highlighting the peculiarities, effectiveness, and drawbacks of each technique. Strain has largely widened the 2D material phase space in a quasi-seamless manner, leading to new and rich scenarios, which are discussed in Secs. IV–VI of this work. The effects of strain on the electronic, optical, vibrational, and mechanical properties of 2D crystals are discussed, as well as the possibility to exploit strain gradients for single-photon emission, non-linear optics, or valley/spintronics. Quantitative surveys of the relevant parameters governing these phenomena are provided. This review seeks to provide a comprehensive state-of-the-art overview of the straining methods and strain-induced effects, and to shed light on possible future paths. The aims and developments, the tools and strategies, and the achievements and challenges of this research field are widely presented and discussed.

physics, applied
Nanoimprint-induced strain engineering of two-dimensional materials

Chuying Sun,Jianwen Zhong,Zhuofei Gan,Liyang Chen,Chuwei Liang,Hongtao Feng,Zhao Sun,Zijie Jiang,Wen-Di Li

DOI: https://doi.org/10.1038/s41378-024-00669-6

2024-04-08

Microsystems & Nanoengineering

Abstract:Abstract The high stretchability of two-dimensional (2D) materials has facilitated the possibility of using external strain to manipulate their properties. Hence, strain engineering has emerged as a promising technique for tailoring the performance of 2D materials by controlling the applied elastic strain field. Although various types of strain engineering methods have been proposed, deterministic and controllable generation of the strain in 2D materials remains a challenging task. Here, we report a nanoimprint-induced strain engineering (NISE) strategy for introducing controllable periodic strain profiles on 2D materials. A three-dimensional (3D) tunable strain is generated in a molybdenum disulfide (MoS 2 ) sheet by pressing and conforming to the topography of an imprint mold. Different strain profiles generated in MoS 2 are demonstrated and verified by Raman and photoluminescence (PL) spectroscopy. The strain modulation capability of NISE is investigated by changing the imprint pressure and the patterns of the imprint molds, which enables precise control of the strain magnitudes and distributions in MoS 2 . Furthermore, a finite element model is developed to simulate the NISE process and reveal the straining behavior of MoS 2 . This deterministic and effective strain engineering technique can be easily extended to other materials and is also compatible with common semiconductor fabrication processes; therefore, it provides prospects for advances in broad nanoelectronic and optoelectronic devices.

nanoscience & nanotechnology,instruments & instrumentation
Stretching graphene using polymeric micro-muscles

Francesco Colangelo,Alessandro Pitanti,Vaidotas Mišeikis,Camilla Coletti,Pasqualantonio Pingue,Dario Pisignano,Fabio Beltram,Alessandro Tredicucci,Stefano Roddaro

DOI: https://doi.org/10.1088/2053-1583/aadf42

2017-11-28

Abstract:The control of strain in two-dimensional materials opens exciting perspectives for the engineering of their electronic properties. While this expectation has been validated by artificial-lattice studies, it remains elusive in the case of atomic lattices. Remarkable results were obtained on nanobubbles and nano-wrinkles, or using scanning probes; microscale strain devices were implemented exploiting deformable substrates or external loads. These devices lack, however, the flexibility required to fully control and investigate arbitrary strain profiles. Here, we demonstrate a novel approach making it possible to induce strain in graphene using polymeric micrometric artificial muscles (MAMs) that contract in a controllable and reversible way under an electronic stimulus. Our method exploits the mechanical response of poly-methyl-methacrylate (PMMA) to electron-beam irradiation. Inhomogeneous anisotropic strain and out-of-plane deformation are demonstrated and studied by Raman, scanning-electron and atomic-force microscopy. These can all be easily combined with the present device architecture. The flexibility of the present method opens new opportunities for the investigation of strain and nanomechanics in two-dimensional materials.

Mesoscale and Nanoscale Physics,Materials Science
Manipulating moires by controlling heterostrain in van der Waals devices

Ian Sequeira,Andrew Z. Barabas,Aaron H Barajas-Aguilar,Michaela G Bacani,Naoto Nakatsuji,Mikito Koshino,Takashi Taniguichi,Kenji Watanabe,Javier D. Sanchez-Yamagishi

2024-09-12

Abstract:Van der Waals (vdW) moires offer tunable superlattices that can strongly manipulate electronic properties. We demonstrate the in-situ manipulation of moire superlattices via heterostrain control in a vdW device. By straining a graphene layer relative to its hexagonal boron nitride substrate, we modify the shape and size of the moire. Our sliding-based technique achieves uniaxial heterostrain values exceeding 1%, resulting in distorted moires that are larger than those achievable without strain. The stretched moire is evident in transport measurements, resulting in shifted superlattice resistance peaks and Landau fans consistent with an enlarged superlattice unit cell. Electronic structure calculations reveal how heterostrain shrinks and distorts the moire Brillouin zone, resulting in a reduced electronic bandwidth as well as the appearance of highly anisotropic and quasi-1-dimensional Fermi surfaces. Our heterostrain control approach opens a wide parameter space of moire lattices to explore beyond what is possible by twist angle control alone.

Mesoscale and Nanoscale Physics
Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique

V Prabhakara,D Jannis,A Bch,H Bender,J Verbeeck,A Béché

DOI: https://doi.org/10.1088/1361-6641/ab5da2

IF: 2.048

2020-02-11

Semiconductor Science and Technology

Abstract:Moiré fringes are used throughout a wide variety of applications in physics and engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in scanning transmission electron microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase stepping demodulation scheme. We demonstrate the novel method on a series of 16 nm Si–Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Polarized shearing Moiré interferometry

Fulong Dai,Jing Fang

DOI: https://doi.org/10.1016/0030-4018(88)90114-9

IF: 2.4

1988-01-01

Optics Communications

Abstract:Illuminating a specimen grating with two plane-polarized beams and shearing the diffracted waves with a glass wedge, this new moiré interferometric method obtains the in-plane strain patterns of a deformed object in real time. Not only is the disturbance of the out-of-plane displacement cancelled, but also a pure pattern of the in-plane strains can be achieved by filtering.
Moire magnetism in CrBr3 multilayers emerging from differential strain

Fengrui Yao,Dario Rossi,Ivo A. Gabrovski,Volodymyr Multian,Nelson Hua,Kenji Watanabe,Takashi Taniguchi,Marco Gibertini,Ignacio Gutierrez-Lezama,Louk Rademaker,Alberto F. Morpurgo

DOI: https://doi.org/10.1038/s41467-024-54870-2

2024-12-03

Abstract:Interfaces between twisted 2D materials host a wealth of physical phenomena originating from the long-scale periodicity associated with the resulting moire structure. Besides twisting, an alternative route to create structures with comparably long or even longer periodicities is inducing a differential strain between adjacent layers in a van der Waals (vdW) material. Despite recent theoretical efforts analyzing its benefits, this route has not yet been implemented experimentally. Here we report evidence for the simultaneous presence of ferromagnetic and antiferromagnetic regions in CrBr3 _a hallmark of moire magnetism_ from the observation of an unexpected magnetoconductance in CrBr3 tunnel barriers with ferromagnetic Fe3GeTe2 and graphene electrodes. The observed magnetoconductance evolves with temperature and magnetic field as the magnetoconductance measured in small angle CrBr3 twisted junctions, in which moire magnetism occurs. Consistent with Raman measurements and theoretical modeling, we attribute the phenomenon to the presence of a differential strain in the CrBr3 multilayer, which locally modifies the stacking and the interlayer exchange between adjacent CrBr3 layers, resulting in spatially modulated spin textures. Our conclusions indicate that inducing differential strain in vdW multilayers is a viable strategy to create moire-like superlattices, which in the future may offer in-situ continuous tunability even at low temperatures.

Materials Science
Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Rishi Maiti,Md Abid Shahriar Rahman Saadi,Rubab Amin,Ongun Ozcelik,Berkin Uluutku,Chandraman Patil,Can Suer,Santiago Solares,Volker J. Sorger

DOI: https://doi.org/10.48550/arXiv.2012.07715

2020-12-14

Mesoscale and Nanoscale Physics

Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.
Manipulating Moirés by Controlling Heterostrain in van der Waals Devices

Ian Sequeira,Andrew Z. Barabas,Aaron H Barajas-Aguilar,Michaela G Bacani,Naoto Nakatsuji,Mikito Koshino,Takashi Taniguichi,Kenji Watanabe,Javier D. Sanchez-Yamagishi

DOI: https://doi.org/10.1021/acs.nanolett.4c04201

IF: 10.8

2024-11-28

Nano Letters

Abstract:Van der Waals (vdW) moirés offer tunable superlattices that can strongly manipulate electronic properties. We demonstrate the in situ manipulation of moiré superlattices via heterostrain control in a vdW device. By straining a graphene layer relative to its hexagonal boron nitride substrate, we modify the shape and size of the moiré. Our sliding-based technique achieves uniaxial heterostrain values exceeding 1%, resulting in distorted moirés values that are larger than those achievable without...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Abin Varghese,Adityanarayan H Pandey,Pooja Sharma,Yuefeng Yin,Nikhil V Medhekar,Saurabh Lodha

DOI: https://doi.org/10.1021/acs.nanolett.4c00357

2024-07-17

Abstract:Strain can modulate bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional strain-application methodologies relying on flexible/patterned/nanoindented substrates are limited by low thermal tolerance, poor tunability, and/or scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control strain transfer from a piezoelectric thin film to electromechanically coupled 2D MoS2. Electrical bias polarity change across the piezo film tunes the nature of strain transferred to MoS2 from compressive (∼0.23%) to tensile (∼0.14%) as verified through Raman and photoluminescence spectroscopies and substantiated by density functional theory calculations. The device architecture, on silicon substrate, integrates an MoS2 field-effect transistor on a metal-piezoelectric-metal stack enabling strain modulation of transistor drain current (130×), on/off ratio (150×), and mobility (1.19×) with high precision, reversibility, and resolution. Large, tunable tensile (1056) and compressive (-1498) strain gauge factors, electrical strain modulation, and high thermal tolerance promise facile integration with silicon-based CMOS and micro-electromechanical systems.

Moiré materials under strain

Moiré straintronics: a universal platform for reconfigurable quantum materials

Designing Moiré Patterns by Strain

Moiré Engineering in 2D Heterostructures with Process-Induced Strain

Moiré-templated Strain Patterning in Transition-Metal Dichalcogenides and Application in Twisted Bilayer MoS2

Epitaxial two-dimensional membranes under intrinsic and extrinsic strains

Noncontacting Optostriction Driven Anisotropic and Inhomogeneous Strain in Two-Dimensional Materials

Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling

Optical Strain Engineering Enables Dynamic Spatial Control of 2D Nanomaterial Properties

Strain-induced tuning of optical properties of layered Mo$S_2$

Toward Moiré engineering in 2D materials via dislocation theory

Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals

Nanoimprint-induced strain engineering of two-dimensional materials

Stretching graphene using polymeric micro-muscles

Manipulating moires by controlling heterostrain in van der Waals devices

Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique

Polarized shearing Moiré interferometry

Moire magnetism in CrBr3 multilayers emerging from differential strain

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Manipulating Moirés by Controlling Heterostrain in van der Waals Devices

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates