Activated resistivities in the integer quantum Hall effect

Sudhansu S. Mandal,V. Ravishankar
DOI: https://doi.org/10.1103/physrevb.55.15748
IF: 3.7
1997-06-15
Physical Review B
Abstract:We have determined the off-diagonal and diagonal conductivities for a quantum Hall system at exactly integer filling at finite temperatures and in the presence of a weak short ranged disorder potential within the self-consistent Born approximation. We find that there is a finite temperature contribution to off-diagonal conductivity σxy which also can be independent of impurity concentration. The diagonal conductivity σxx also survives only when both temperature and disorder are nonzero. At low temperatures, σxx activates with a temperature dependent prefactor. Inverting the conductivity matrix, we determine the resistivities. The deviation of the off-diagonal resistivity ρxy from its zero temperature value and the diagonal resistivity ρxx activate with a temperature dependent prefactor at low temperatures, in agreement with experiments. Further, we find two physical regimes both of which are at low temperatures and low broadening, which provide the experimentally observed linear relationship between the deviation of ρxy and the ρxx with different signs. We have also estimated the effective masses from the experimental data of ρxy and find them to be reasonable. Finally, our result on compressibility as a function of temperature shows that there is no phase transition involved in the system as far as the temperature is concerned.
physics, condensed matter, applied,materials science, multidisciplinary
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