Towards the Accurate Electronic Structure Descriptions of Typical High-Constant Dielectrics
Ting-Ting Jiang,Qing-Qing Sun,Ye Li,Jiao-Jiao Guo,Peng Zhou,Shi-Jin Ding,David Wei Zhang
DOI: https://doi.org/10.1088/0022-3727/44/18/185402
2011-01-01
Journal of Physics D Applied Physics
Abstract:High-constant dielectrics have gained considerable attention due to their wide applications in advanced devices, such as gate oxides in metal–oxide–semiconductor devices and insulators in high-density metal–insulator–metal capacitors. However, the theoretical investigations of these materials cannot fulfil the requirement of experimental development, especially the requirement for the accurate description of band structures. We performed first-principles calculations based on the hybrid density functionals theory to investigate several typical high-k dielectrics such as Al2O3, HfO2, ZrSiO4, HfSiO4, La2O3 and ZrO2. The band structures of these materials are well described within the framework of hybrid density functionals theory. The band gaps of Al2O3, HfO2, ZrSiO4, HfSiO4, La2O3 and ZrO2are calculated to be 8.0 eV, 5.6 eV, 6.2 eV, 7.1 eV, 5.3 eV and 5.0 eV, respectively, which are very close to the experimental values and far more accurate than those obtained by the traditional generalized gradient approximation method.