Abstract:Using the first-principles method, the structural, electronic, optical and mechanical properties of the vertical and lateral heterostructures based on the boron phosphide (BP) and GaN monolayers, named V-GaN@BP and L-GaN@BP, are investigated systematically. Our results revealed that the band structure of the V-GaN@BP is more sensitive than that of the L-GaN@BP to the strain and the external electric field (Efield). For the VD-GaN@BP, with the Efield and strain, the band structure not only undergoes a fascinating direct–indirect and semiconductor–metal transition, but also experiences a transition from type-I to type-II. However, the LNB-GaN@BP maintains a type-II semiconductor with an indirect band gap, though the band gaps can be strongly modulated by applied strain and the Efield. Moreover, the heterostructures are found to be mechanically stable presenting superior optical properties in the visible and UV light range. Consequently, we expect the GaN@BP heterostructures are novel architectures for the future development of efficient optoelectronic devices, due to the selective control of their bandgaps, the excellent optical and mechanical properties.

What problem does this paper attempt to address?

This paper aims to study the structural, electronic, optical and mechanical properties of vertical and lateral heterostructures constructed based on monolayer boron phosphide (BP) and gallium nitride (GaN). Specifically, the paper focuses on two types of heterostructures: vertical heterostructure (V - GaN@BP) and lateral heterostructure (L - GaN@BP). The main research questions include: 1. **Band Gap and Band Structure**: - The effects of external electric fields and strains on the band gaps and band structures of V - GaN@BP and L - GaN@BP were studied. - It was found that the band gap of V - GaN@BP is more sensitive to electric fields and strains, while L - GaN@BP still maintains the characteristics of an indirect band gap under these conditions. - Through electric fields and strains, the band gap of V - GaN@BP can undergo transitions from direct to indirect, semiconductor to metal, while L - GaN@BP maintains the characteristics of a type II semiconductor. 2. **Optical Properties**: - The optical absorption coefficients of BP, GaN, V - GaN@BP and L - GaN@BP were calculated. - The results show that the absorption capacity of V - GaN@BP in the visible and ultraviolet light ranges is better than that of L - GaN@BP, indicating that it has higher potential application value in optoelectronic devices. 3. **Mechanical Properties**: - The mechanical stabilities of monolayer BP, GaN, V - GaN@BP and L - GaN@BP were evaluated. - By calculating the elastic constants and Poisson's ratios, it was found that V - GaN@BP has the highest in - plane stiffness (248 Nm\(^{-1}\)), while the in - plane stiffness of L - GaN@BP is between that of pure BP and GaN (129 Nm\(^{-1}\)). 4. **Interface Bonding Characteristics**: - A detailed analysis of the interface bonding characteristics of L - GaN@BP was carried out, and it was found that B and N atoms form covalent bonds at the interface, enhancing the stability of the heterostructure. In summary, through systematic theoretical calculations, this paper reveals the unique advantages of V - GaN@BP and L - GaN@BP in terms of electronic, optical and mechanical properties, providing a theoretical basis for the design of future high - efficiency optoelectronic devices.

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