Abstract:Abstract The work describes multiband photon detectors based on semiconductor micro-and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum dots-in-a-well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunnelling quantum dot infrared photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunnelling, while the dark current is blocked by AlGaAs/InGaAs tunnelling barriers placed in the structure. A two-colour infrared detector with photoresponse peaks at ∼6 and ∼17 μm at room temperature will be discussed. A homojunction or heterojunction interfacial workfunction internal photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.

Antenna-enhanced high-resistance photovoltaic infrared detectors based on quantum ratchet architecture

Broadband and Photovoltaic THz/IR Response in the GaAs-based Ratchet Photodetector

Quantum Ratchet Broadband THz Detector

Realization of ultrabroadband THz/IR photoresponse in a bias-tunable ratchet photodetector

High Responsivity, Dual-Band Response and Intraband Avalanche Multiplication in InGaAs/InP Quantum Well Photodetectors

High-temperature Photon-Type Ultra-Broadband Detectors Based on Ratchet Structure

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Highly sensitive SWIR photodetector using carbon nanotube thin film transistor gated by quantum dots heterojunction

Quantum-Tuned Cascade Multijunction Infrared Photodetector

A Sensitive Double Quantum Well Infrared Phototransistor

All-dielectric Resonant Waveguide Based Quantum Well Infrared Photodetectors for Hyperspectral Detection

High-performance mid-infrared quantum dot infrared photodetectors

Quantum structures for multiband photon detection

Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Ultra-broadband THz/IR upconversion and photovoltaic response in semiconductor ratchet-based upconverter

Resonant Cavity-enhanced Colloidal Quantum-dot Dual-band Infrared Photodetectors

Highly Sensitive Midinfrared Phototransistor

High responsivity quantum cascade detectors with bound-to-miniband diagonal transition

High-Performance Photodetector Based on the ReSe 2 /PtSe 2 van der Waals Heterojunction