Ultra-broadband THz/IR upconversion and photovoltaic response in semiconductor ratchet-based upconverter

Peng Bai,Ning Yang,Weidong Chu,Yueheng Zhang,Wenzhong Shen,Zhanglong Fu,Dixiang Shao,Kang Zhou,Zhiyong Tan,Hua Li,Juncheng Cao,Lianhe Li,Edmund Harold Linfield,Yan Xie,Ziran Zhao
DOI: https://doi.org/10.1063/5.0070520
IF: 4
2021-12-13
Applied Physics Letters
Abstract:An ultra-broadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction light emitting diode (DH-LED) using the molecular beam epitaxy. An ultra-broadband photoresponse from the terahertz (THz) to near-infrared (NIR) region (4–200 THz) was realized, which covered a much wider frequency range compared with existing upconversion devices. Broadband IR/THz radiation from a 1000 K blackbody was upconverted into NIR light that could be detected via a commercial Si-based device. The normal incidence absorption of the RP simplified the structure of the RP-LED device and made it more compact than the intersubband transition-based upconverters. In addition to upconversion, the proposed upconverter was investigated as a photovoltaic detector in the infrared region (detection range from 18 to 150 THz) based on the ratchet effect without an applied bias voltage.
physics, applied
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