Abstract:With the downscaling of CMOS devices, dynamic variability induced by negative bias temperature instability (NBTI) has become a critical issue. In addition to the time-dependent device-to-device variation (DDV) of NBTI degradation, the cycle-to-cycle variation (CCV) originated from random trap occupation is found non-negligible and should be added into the total dynamic variation. This paper summarizes our recent studies on NBTI-induced dynamic variability, focusing on the CCV effect, with more details on the statistical modeling, circuit reliability simulation methodologies and experimental results. By adding the random trap occupation into consideration, a statistical model for total dynamic variation (DDV+CCV) is proposed. The effective occupancy probability peff is introduced as a key parameter for modeling and circuit reliability simulation. With the statistical trap response (STR) method and modified on-the-fly method, the proposed model is validated by the experimental evidence under both DC and AC NBTI. According to the model and experimental results, circuit reliability simulation framework is proposed for both long-term quasi-static and short-term transient performance evaluation with the additional impact of CCV. Two representative digital circuit units, ring oscillator (RO) and SRAM cell, are simulated under different conditions, indicating it necessary to consider the evident influence of the CCV in accurate circuit reliability evaluation. The results are helpful for the reliability/variability-aware circuit design in nanoscale technology.

An Analytical Gate Delay Variability Model for Low-Power Applications under the Process Variations Effects

Dynamic Supply Noise Aware Timing Analysis with JIT Machine Learning Integration

A Comprehensive Model for Gate Delay under Process Variation and Different Driving and Loading Conditions

Dynamic Power Model of CMOS Gates Driving Transmission Lines Based on Fourier Analysis

On Modeling the Digital Gate Delay under Process Variation

A Silicon-Validated Methodology for Power Delivery Modeling and Simulation

Modelling Circuit Performance Variations Due to Statistical Variability: Monte Carlo Static Timing Analysis

Experimental Confirmation of an Accurate Cmos Gate Delay Model for Gate Oxide and Voltage Scaling

An analytical mismatch model of nano-CMOS device under impact of intrinsic device variability

Analysis of Gate-Delay Models for High-Speed CMOS Circuits

System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown

Circuit-Level Delay Modeling Considering Both Tddb And Nbti

Analytical delay variation modeling for evaluating sub-threshold synchronous/asynchronous designs

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Improving the Process-Variation Tolerance of Digital Circuits Using Gate Sizing and Statistical Techniques

High level circuit synthesis with system level Statistical Static Timing Analysis under process variation

Analysis and Mitigation of Variability in Subthreshold Design

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Adjustment-based modeling for timing analysis under variability

Distinctive Inverter Delay Model Applied to Variation Delay Analysis

Impact Of Intrinsic Parameter Fluctuations On Deca-nanometer Circuits, And Circuit Modelling Techniques