Abstract:Instrumented indentation performed at room temperature with a Berkovich and 10 μm radius sphere has been used to measure the stress exponent for creep before and after the strain burst observed in well-annealed, high-purity indium. Before the strain burst, the measured values are successfully rationalized using a new model based on stress directed diffusional flow along the interface between the indenter tip and test specimen. After the strain burst, the measured stress exponents are found to be representative of dislocation glide and climb assisted glide. These results are compared and contrasted to the previous experimental investigations and modeling efforts of Feng et al., Lucas et al., and Li et al. Collectively, the experimental observations and rationalization presented here provide significant new insight into the mechanisms of action that control the competition for stress relief in small, constrained volumes of crystalline metals subjected to high homologous temperatures.Graphical abstract

On the correlation between the stress exponent for creep determined by nanoindentation and the mechanism of action enabling stress relief in indium