Development of high‐reflectivity and antireflection dielectric multilayer mirrors for AlGaN‐based ultraviolet‐B laser diodes and their device applications
Ayumu Yabutani,Ryota Hasegawa,Ryosuke Kondo,Eri Matsubara,Daichi Imai,Sho Iwayama,Yoshito Jin,Tatsuya Matsumoto,Masamitsu Toramaru,Hironori Torii,Tetsuya Takeuchi,Satoshi Kamiyama,Hideto Miyake,Motoaki Iwaya
DOI: https://doi.org/10.1002/pssa.202200831
2023-05-30
physica status solidi (a) - applications and materials science
Abstract:We developed fabrication techniques for high‐reflectivity (HR) and antireflection (AR) dielectric multilayer mirrors for AlGaN‐based ultraviolet‐B (UV‐B) laser diodes. After depositing several dielectric materials and evaluating their complex refractive indices via ellipsometry, we determined that SiO2 as a low‐refractive‐index material and Ta2O5 as a high‐refractive‐index material are appropriate material combinations in the UV‐B region at a light wavelength of ∽300 nm due to their low extinction coefficients and large refractive index difference. Based on these results, we designed an HR mirror with a reflectance of >99% in the UV‐B region at a center wavelength of 310 nm and an AR mirror with a reflectance of ∽8% in the same wavelength range; we demonstrated a mirror with reflectance that is almost equal to the designed value. Furthermore, these mirrors were coated on the respective edge surfaces of the UV‐B laser diodes. A comparison of the characteristics of the same device before and after edge coating revealed a reduction in the threshold current density of laser oscillation, whereas, simultaneously, an increase in slope efficiency and external differential quantum efficiency was observed. The improvement of these device characteristics, estimated from the above reflectance values, was confirmed to be almost theoretically explainable. This article is protected by copyright. All rights reserved.