Interface Engineering Ti 3 C 2 MXene/Silicon Self‐Powered Photodetectors with High Responsivity and Detectivity for Weak Light Applications
Weidong Song,Qing Liu,Jiaxin Chen,Zhao Chen,Xin He,Qingguang Zeng,Shuti Li,Longfei He,Zhitao Chen,Xiaosheng Fang
DOI: https://doi.org/10.1002/smll.202100439
IF: 13.3
2021-04-23
Small
Abstract:<p>Interfacial engineering and heterostructures designing are two efficient routes to improve photoelectric characteristics of a photodetector. Herein, a Ti<sub>3</sub>C<sub>2</sub> MXene/Si heterojunction photodetector with ultrahigh specific detectivity (2.03 <b>×</b> 10<sup>13</sup> Jones) and remarkable responsivity (402 mA W<sup>−1</sup>) at zero external bias without decline as with increasing the light power is reported. This is achieved by chemically regrown interfacial SiO<sub>x</sub> layer and the control of Ti<sub>3</sub>C<sub>2</sub> MXene thickness to suppress the dark noise current and improve the photoresponse. The photodetector demonstrates a high light on/off ratio of over 10<sup>6</sup>, an outstanding peak external quantum efficiency (<i>EQE</i>) of 60.3%, while it maintains an ultralow dark current at 0 V bias. Moreover, the device holds high performance with <i>EQE</i> of over 55% even after encapsulated with silicone, trying to resolve the air stability issue of Ti<sub>3</sub>C<sub>2</sub> MXene. Such a photodetector with high detectivity, high responsivity, and self‐powered capability is particularly applicable to detect weak light signal, which presents high potential for imaging, communication and sensing applications.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology