Abstract:Scalable 2D planar memristors based on monolayer ReS2/WS2 van der Waals heterostructure are fabricated. The devices show superior nonvolatile memristive properties and simulated synaptic functions. Both the electrical and optical modulations on the resistance states and programming voltage are realized. The resistance switching behavior and electrical and optical controllability are attributed to the unique optoelectronic properties and interlayer interaction of the heterostructure. Memristors with nonvolatile storage performance and simulated synaptic functions are regarded as one of the critical devices to overcome the bottleneck in traditional von Neumann computer architecture. 2D van der Waals heterostructures have paved a new way for the development of advanced memristors by integrating the intriguing features of different materials and offering additional controllability over their optoelectronic properties. Herein, planar memristors with both electrical and optical tunability based on ReS2/WS2 van der Waals heterostructure are demonstrated. The devices show unique unipolar nonvolatile behavior with high Roff/Ron ratio of up to 106, desirable endurance, and retention, which are superior to pure ReS2 and WS2 devices. When decreasing the channel length, the set voltage can be notably reduced while the high Roff/Ron ratios are retained. By introducing electrostatic doping through the gate control, the set voltage can be tailored in a wide range from 4.50 to 0.40 V. Furthermore, biological synaptic functions and plasticity, including spike rate‐dependent plasticity and paired‐pulse facilitation, are successfully realized. By employing optical illumination, resistive switching can also be modulated, which is dependent on the illumination energy and power. A mechanism related to the interlayer charge transfer controlled by optical excitation is revealed.

Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode

Imperfection-enabled memristive switching in van der Waals materials

Homo-layer hafnia-based memristor with large analog switching window

Purely electronic nanometallic resistance switching random-access memory

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Controllable analog-to-digital bipolar resistive switching behavior and mechanism analysis in 8-MnO2-based memristor

Nanofluidic logic with mechano–ionic memristive switches

Controllable Analog-to-digital Bipolar Resistive Switching Behavior and Mechanism Analysis in Δ-Mno2-based Memristor

Memristive Switching: Magneto‐Memristive Switching in a 2D Layer Antiferromagnet (Adv. Mater. 2/2020)

Alloying conducting channels for reliable neuromorphic computing

Multifunctional Analog Resistance Switching of Si3N4-Based Memristors Through Migration of Ag+ Ions and Formation of Si-Dangling Bonds

Controllable Resistive Switching in ReS2/WS2 Heterostructure for Nonvolatile Memory and Synaptic Simulation

Purely electronic nanometallic ReRAM

Organic Memristive Devices Based on Silver Nanoparticles and Dna

Ultrathin Anion Conductors Based Memristor

MoS2-Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation

Controllable High-Performance Memristors Based on 2D Fe2GeTe3 Oxide for Biological Synapse Imitation

Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device

Memristors Based on an Iridium(III) Complex Containing Viologen for Advanced Synaptic Bionics

Analog and Digital Mode α‐In 2 Se 3 Memristive Devices for Neuromorphic and Memory Applications

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity